| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Storage Temperature | |
| Tape & Reel | |
| Transistor Type |
The TIP29C is a versatile NPN bipolar junction transistor (BJT) manufactured by NXP Semiconductors, suitable for medium power linear and switching applications. It offers a collector-emitter breakdown voltage of 100V and can handle a maximum collector current of 1A.
Key electrical characteristics include a maximum power dissipation of 2W and a minimum DC current gain (hFE) of 15 at 1A and 4V. The saturation voltage (Vce Sat) is specified at a maximum of 700mV at 125mA collector current and 1A base current. The cutoff current (Icbo) is a maximum of 300μA.
This transistor is designed for through-hole mounting and comes in a TO-220-3 package, making it suitable for various electronic circuits. The operating temperature range extends up to 150°C (TJ), ensuring reliability in demanding environments.
With its robust specifications, the TIP29C is a reliable choice for power amplification, switching, and general-purpose discrete semiconductor applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage for the TIP29C is 100V.
The maximum continuous collector current for the TIP29C is 1A.
The maximum power dissipation for the TIP29C is 2W.
The TIP29C operates at a maximum temperature of 150°C (TJ).
The TIP29C transistor is mounted using the through-hole method.
The TIP29C is supplied in a TO-220-3 package.