| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
812 pcs
|
812 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Storage Temperature | |
| Tape & Reel | |
| Transistor Type |
The JANHCB2N3700 is a high-performance NPN Bipolar Junction Transistor (BJT) manufactured by Microchip Technology. This component is designed for various electronic applications requiring reliable switching and amplification.
Key electrical specifications include a maximum collector-emitter breakdown voltage of 80V and a continuous collector current rating of 1A. The transistor has a maximum power dissipation of 500mW. Its Vce saturation is specified at 500mV at 50mA collector current and 500mA base current, with a minimum DC current gain (hFE) of 100 at 150mA collector current and 10V Vce.
The JANHCB2N3700 is housed in a TO-18 (TO-206AA) metal can package, suitable for through-hole mounting. This packaging ensures robust performance and ease of integration into circuit boards.
This transistor is suitable for general-purpose amplification and switching applications in industrial and consumer electronics. Its specifications make it a versatile component for designers.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current (Ic) for the JANHCB2N3700 is 1 A.
The collector-emitter breakdown voltage for the JANHCB2N3700 is 80 V.
The maximum power dissipation for the JANHCB2N3700 is 500 mW.
The JANHCB2N3700 is supplied in a TO-18 (TO-206AA) package.
The JANHCB2N3700 is designed for through-hole mounting.
