| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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32 pcs
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32 pcs | On Request | 1 | On Request | On Request | 97805 | On Request | On Request |
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| Input Capacitance |
The CENTRAL SEMICONDUCTOR 2N1893 is a silicon NPN epitaxial planar transistor designed for small signal general purpose switching applications. It is housed in a TO-39 case.
Key electrical characteristics include a maximum collector-base voltage (VCBO) of 120V, a maximum collector-emitter voltage (VCER) of 100V, and a maximum collector-emitter voltage (VCEO) of 80V. The continuous collector current (IC) is rated at 500mA. Power dissipation is 3.0W at 25°C case temperature and 0.8W at 25°C ambient temperature.
Electrical specifications include a minimum DC current gain (hFE) ranging from 20 to 200 depending on test conditions. The transition frequency (fT) is a minimum of 50MHz at 10V and 50mA. Output capacitance (Cob) is a maximum of 15pF, and input capacitance (Cib) is a maximum of 85pF.
Operating and storage junction temperatures range from -65°C to +200°C. The transistor is marked with the full part number.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 100V for VCER and 80V for VCEO.
The maximum continuous collector current is 500mA.
The maximum power dissipation is 3W at a case temperature of 25°C, with an additional rating of 0.8W.
The minimum transition frequency is 50MHz.
At VCE=10V and IC=150mA, the DC current gain ranges from 40 to 200.
The operating and storage junction temperature range is -65°C to +200°C.
The 2N1893 is available in a TO-39 package.