| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10 pcs
|
10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Input Capacitance | |
| Mounting Type |
The SESCOCEM 2N2223 is a dual NPN silicon transistor manufactured using the epitaxial planar process. It utilizes two individual chips housed in a hermetically sealed metal TO-78 case, making it suitable for differential amplifier applications.
Key electrical characteristics include a maximum Collector-Base Voltage (V_CBO) of 100V and a maximum Continuous Collector Current (I_C) of 500mA per die. The device offers a maximum Power Dissipation (P_D) of 500mW per die and 600mW for both dice at 25°C.
Operating and storage junction temperatures range from -65°C to +200°C. The transistor exhibits various electrical parameters such as breakdown voltages, saturation voltages, and current gain (hFE) within specified test conditions. Its TO-78 case and through-hole mounting make it a versatile component for various electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-base voltage of the 2N2223 is 100V.
The maximum collector current is 500mA.
The 2N2223 is packaged in a TO-78 case.
The operating and storage junction temperature range is from -65°C to +200°C.
RoHS compliance status is unverified.