| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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12 pcs
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12 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Input Capacitance | |
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| SVHC Present |
The STMicroelectronics 2N1893 is a silicon NPN epitaxial planar transistor suitable for small signal general purpose switching applications. It is designed for reliability and performance in various electronic circuits.
Key electrical characteristics include a maximum Collector-Base Voltage (VCBO) of 120V and a maximum Collector-Emitter Voltage (VCEO) of 80V. The device can handle a Continuous Collector Current (IC) of up to 500mA. Power dissipation is rated at 3.0W at 25°C case temperature and 0.8W at 25°C ambient temperature.
Electrical specifications also detail breakdown voltages, saturation voltages, and DC current gain (hFE) which ranges from 20 to 200 depending on test conditions. The transition frequency (fT) is 50MHz at 10V and 50mA. Input capacitance (Cib) is 85pF and output capacitance (Cob) is 15pF.
The 2N1893 is housed in a TO-39 case and is designed for through-hole mounting. The operating and storage junction temperature range is -65°C to +200°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.85 | $0.85 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCER) is 100V, with a VCEO rating of 80V.
It is available in a TO-39 through-hole package.
The junction temperature range is -65°C to +200°C.
The continuous collector current is 500mA.
At VCE=10V and IC=150mA, hFE ranges from 40 to 200.
The minimum transition frequency (fT) is 50MHz at VCE=10V, IC=50mA.