| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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262 pcs
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262 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N0607 from N-A is a MOSFET transistor designed for various electronic applications. It offers a drain-source voltage (VDS) of 60V and a continuous drain current (ID) of up to 210A. The gate-source voltage (VGS) is rated at ±20V, with a typical gate threshold voltage (Vth) of 3.5V.
This component utilizes MOSFET technology and comes in a TO-262F package, which is a common form factor for power applications. The TO-262 package is suitable for through-hole mounting.
Key electrical characteristics include a maximum VDS of 60V and a maximum ID of 210A. The typical VGS threshold is 3.5V. The device is identified as a MOSFET.
This part is suitable for applications requiring moderate voltage and high current handling capabilities within the TO-262 package footprint.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (VDS) is 60V.
The continuous drain current (ID) is 210A.
The typical gate threshold voltage (Vth) is 3.5V.
The 2N0607 is available in a TO-262F package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.