BSS83P H6327 The Infineon BSS83P H6327 is a P-Channel MOSFET with a 60V drain-source voltage and 330mA continuous drain current. It is available in a surface-mount SOT-23-3 package.
Mfr Part #:

BSS83P H6327

Available from 6 distributors
Mfr Name: Infineon
Infineon
The Infineon BSS83P H6327 is a P-Channel MOSFET with a 60V drain-source voltage and 330mA continuous drain current. It is available in a surface-mount SOT-23-3 package.
Total Stock: 125,686 pcs
$ Price Range: $0.99

BSS83P H6327 Available from 6 distributors

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BSS83P H6327 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Drain to Source Voltage (Vdss)
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BSS83P H6327 Description

Short technical summary and product information.

The Infineon BSS83P H6327 is a P-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage (Vds) of 60V and a continuous drain current (Id) of 330mA at 25°C. The device exhibits a low on-resistance (Rds On) of 2 Ohms at 330mA and 10V gate-source voltage, with a typical gate threshold voltage (Vgs(th)) of 2V at 80µA.

 

This MOSFET operates within a temperature range of -55°C to 150°C. It is housed in a compact SOT-23-3 surface-mount package, making it suitable for space-constrained designs. The technology used is Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) with a silicon substrate.

 

Key electrical characteristics include an input capacitance (Ciss) of 78pF at 25V and a gate charge (Qg) of 3.57nC at 10V. The device also specifies typical turn-on delay time of 23ns and turn-off delay time of 56ns, with rise and fall times of 71ns and 61ns respectively. Its power dissipation is rated at 360mW.

BSS83P H6327 Quick Information

Product Type: MOSFET
Series: SIPMOS®
Canonical Name: Infineon BSS83P H6327 P-Channel MOSFET
Subcategory: P-Channel

BSS83P H6327 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead free

BSS83P H6327 Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSS83P H6327 Features

  • P-Channel MOSFET technology.
  • 60V drain-source breakdown voltage.
  • 330mA continuous drain current.
  • Low on-resistance of 2 Ohms.
  • Surface mount SOT-23-3 package.

BSS83P H6327 Applications

  • Suitable for general switching applications.
  • Used in low-power electronic circuits.
  • Ideal for space-constrained designs.
  • Component in portable electronic devices.

BSS83P H6327 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the BSS83P H6327 MOSFET?

The drain-source breakdown voltage (Vds) is 60V.

What is the continuous drain current for the BSS83P H6327?

The continuous drain current (Id) is 330mA at 25°C.

What is the on-resistance (Rds On) of the BSS83P H6327 MOSFET?

The on-resistance is a maximum of 2 Ohms at 330mA and 10V gate-source voltage.

What is the operating temperature range for the BSS83P H6327?

The operating temperature range is -55°C to 150°C.

What package type is the BSS83P H6327 MOSFET supplied in?

It is supplied in a SOT-23-3 surface-mount package.

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