| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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452,000 pcs
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452000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba TPC8003 is an N-Channel MOSFET belonging to the U-MOSII series. It is designed for applications such as Lithium Ion Battery, Portable Equipment, and Notebook PCs.
Key electrical characteristics include a drain-source on-resistance of 5.4 mΩ (typical) at VGS = 10 V and ID = 6.5 A, and a maximum drain current of 10 A at VDS = 30 V. The forward transconductance is typically 21 S. The device operates with a drain-source voltage of up to 30 V.
This MOSFET is housed in a small and thin package, contributing to a small footprint. It is suitable for switching regulator applications, motor drive applications, and DC-DC converters. The component is lead-free.
Applications include Lithium Ion Battery Applications, Portable Equipment Applications, and Notebook PC Applications. The small footprint due to its small and thin package makes it ideal for space-constrained designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical drain-source on-resistance is 5.4 mΩ at VGS = 10 V and ID = 6.5 A.
The maximum drain-source voltage is 30 V.
The typical forward transconductance is 21 S.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.