| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,670 pcs
|
2670 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The EPC2055 from Vogt Electronic is an enhancement mode power transistor utilizing Gallium Nitride technology. This device offers exceptionally high electron mobility and a low temperature coefficient, resulting in very low on-state resistance (RDS(on)) of typically 4.2 mΩ at 15A.
With a continuous drain-to-source voltage (VDS) rating of 40V and a continuous drain current (ID) of 29A at 25°C, the EPC2055 is suitable for demanding power conversion tasks. Its design provides ultra-high efficiency and no reverse recovery, making it beneficial for applications requiring very high switching frequencies and low on-time.
The EPC2055 is supplied in passivated die form with solder bars, indicating a surface-mount capability. Its operating temperature range is -40°C to 150°C.
Key applications include DC-DC converters, sync rectification, high-frequency point-of-load converters, Lidar, USB-C battery chargers, LED lighting, and motor drivers.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.00 | $3.00 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain-to-source voltage for the EPC2055 is 40V.
The continuous drain current for the EPC2055 at 25°C is 29A.
The typical drain-source on-resistance (RDS(on)) of the EPC2055 is between 3 mΩ and 4.2 mΩ at VGS = 5V and ID = 15A.
The EPC2055 can operate between -40°C and 150°C.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.