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19,000 pcs
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19000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 1N4152 is a high-speed switching diode manufactured by ROHM Semiconductor. It is designed for applications requiring fast switching times, with a maximum reverse recovery time of 4 ns. This diode has a peak reverse voltage rating of 40V and a maximum forward voltage of 0.81V at 10mA.
Key electrical characteristics include a low reverse current of 50nA at 30V and a diode capacitance of 2.0pF at 1MHz. The device has a maximum power dissipation of 500mW and an operating junction temperature up to 175°C.
Packaged in a DO-35 glass case, the 1N4152 is suitable for through-hole mounting. Its mechanical data indicates a weight of approximately 0.13g. The diode operates within a storage temperature range of -65°C to +200°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The peak reverse voltage of the 1N4152 diode is a maximum of 40V.
The 1N4152 diode has a maximum switching speed of 4 ns.
The forward voltage for the 1N4152 at 10mA is a maximum of 0.81V.
The reverse current for the 1N4152 at 30V is a maximum of 50nA.
The diode capacitance of the 1N4152 is a maximum of 2.0pF at 1MHz and 0V.
The reverse recovery time for the 1N4152 diode is a maximum of 4 ns.
The maximum power dissipation for the 1N4152 is 500mW.