| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 1N4454 from ROHM Semiconductor is a silicon epitaxial planar diode designed for small-signal applications. It offers a peak reverse voltage of 100V and a maximum average rectified forward current of 150mA.
Key electrical characteristics include a maximum forward voltage drop of 1.0V at 10mA and a leakage current of 100nA at 50V. The diode boasts a fast switching speed with a reverse recovery time of 4ns.
Packaged in a DO-35 glass case, the 1N4454 is suitable for through-hole mounting. It has a maximum power dissipation of 500mW at 25°C ambient temperature and a maximum junction temperature of 175°C.
This diode is a reliable component for various electronic circuits requiring fast switching and rectification capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.44 | $0.44 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum reverse voltage is 75V, and the peak reverse voltage is 100V.
The maximum forward current is 150mA, with a surge forward current rating of 500mA for t < 1s at Tj = 25°C.
The forward voltage is 1.0V maximum when forward current is 10mA.
The reverse recovery time is 4ns maximum, measured from 10mA to 1mA with VR = 6V and RL = 100Ω.
The 1N4454 is available in a DO-35 glass package.
The maximum junction temperature is 175°C.
The maximum power dissipation is 500mW at Tamb = 25°C.