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1,496 pcs
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1496 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 1N4152 is a high-speed switching diode manufactured by NXP Semiconductors. It is designed for applications requiring fast switching times, with a maximum reverse recovery time of 4ns. This diode features a peak reverse voltage rating of 40V and a maximum power dissipation of 500mW.
Electrical characteristics include a low reverse current, typically 50nA at 30V, and a forward voltage drop that varies with current, ranging from 0.49V to 0.88V depending on the forward current. The diode capacitance is a maximum of 2.0pF at 1MHz.
Packaged in a standard DO-35 glass case, the 1N4152 is suitable for through-hole mounting. Its operating junction temperature can reach up to 175°C, with a storage temperature range of -65°C to +200°C. The diode is also RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The peak reverse voltage is 40V.
The maximum switching speed is 4ns.
The forward voltage at 10mA is between 0.70V and 0.81V.
The reverse current at 30V is a maximum of 50nA.
The diode capacitance is a maximum of 2.0pF.
The reverse recovery time is a maximum of 4ns.
The maximum power dissipation is 500mW.