| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,050 pcs
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4050 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The PANJIT 1N4003 is a standard recovery rectifier diode suitable for a wide range of general-purpose applications. This diode offers a peak repetitive reverse voltage of 200V and an average forward rectified current of 1A at 75°C.
Key electrical characteristics include a maximum instantaneous forward voltage of 1.1V at 1A and a low reverse leakage current. The diode has a junction capacitance of 40pF at 0V and 1MHz.
Mechanically, the 1N4003 is available in DO-41 and SMD packages. The datasheet specifies die dimensions of 1000 x 1000 µm with an anode pad size of 450 x 450 µm and a die thickness of 220 µm. The top metal is composed of Al 7.5µm, and the back metal is Ti/Ni/Ag.
This rectifier diode is designed for applications such as power supply rectifiers, battery chargers, adapter circuits, and AC to DC converters. It can also be used for component protection and voltage blocking.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum repetitive reverse voltage (VRRM) for the 1N4003 diode is 200V.
The average forward rectified current (IF(AV)) for the 1N4003 diode is 1A at 75°C.
The maximum instantaneous forward voltage (VF) for the 1N4003 diode is 1.1V when the forward current (IF) is 1A.
The operating junction temperature range is -55°C to 175°C, and the storage temperature range is -65°C to 200°C.
The 1N4003 diode is available in DO-41 and SMD packages.
The peak forward surge current (IFSM) for the 1N4003 diode is 30A, measured under specific conditions.
