| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,450 pcs
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1450 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 1N4003 is a standard recovery rectifier diode designed for general-purpose applications. It offers a peak repetitive reverse voltage of 200V and an average forward rectified current of 1A at 75°C.
Key electrical characteristics include a low instantaneous forward voltage of 1.1V at 1A and a maximum reverse leakage current of 5µA at 25°C and 50µA at 100°C. The diode also has a maximum junction capacitance of 40pF at 1MHz.
Mechanically, the 1N4003 is available in DO-41 and SMD packages. The die dimensions are 1000 x 1000 µm with an anode pad size of 450 x 450 µm and a die thickness of 220 µm. The operating junction temperature ranges from -55°C to 175°C, with a storage temperature range of -65°C to 200°C.
This diode is suitable for applications such as power supply rectifiers, battery chargers, adapter circuits, and AC to DC converters. It can also be used for component protection and voltage blocking.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The 1N4003 diode has a peak repetitive reverse voltage of 200V and a DC blocking voltage of 200V.
The 1N4003 diode has an average forward rectified current rating of 1A at 75°C.
The maximum instantaneous forward voltage for the 1N4003 diode is 1.1V when the forward current is 1A.
The 1N4003 diode is available in DO-41 and SMD packages.
The operating junction temperature for the 1N4003 diode ranges from -55°C to 175°C.