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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
BC847BFA-7B
BC847BFA-7B
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Diodes Incorporated
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - 170MHz - - Surface Mount -55°C ~ 150°C (TJ) 435 mW - - X2-DFN0806-3 - NPN 300mV @ 5mA, 100mA 45 V
CMPT3019 TR PBFREE
CMPT3019 TR PBFREE
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Central Semiconductor Corp
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 - - - - - - - - 500 mA 100 @ 150mA, 10V - - - 400MHz - - Surface Mount -65°C ~ 150°C (TJ) 350 mW - - SOT-23 - NPN 500mV @ 50mA, 500mA 80 V
PBSS4350D,125
PBSS4350D,125
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Nexperia USA Inc.
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 - - - - - - - - 3 A 100 @ 2A, 2V - - - 100MHz - - Surface Mount 150°C (TJ) 750 mW - - 6-TSOP - NPN 290mV @ 200mA, 2A 50 V
PBSS4350D,115
PBSS4350D,115
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Nexperia USA Inc.
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 - - - - - - - - 3 A 100 @ 2A, 2V - - - 100MHz - - Surface Mount 150°C (TJ) 750 mW - - 6-TSOP - NPN 290mV @ 200mA, 2A 50 V
PBSS4350D,135
PBSS4350D,135
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Nexperia USA Inc.
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 - - - - - - - - 3 A 100 @ 2A, 2V - - - 100MHz - - Surface Mount 150°C (TJ) 750 mW - - 6-TSOP - NPN 290mV @ 200mA, 2A 50 V
BCP55TA
BCP55TA
Diodes Incorporated
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 - - - - - - - - 1 A 40 @ 150mA, 2V - - - 150MHz - - Surface Mount -55°C ~ 150°C (TJ) 2 W - - SOT-223-3 - NPN 500mV @ 50mA, 500mA 60 V
BCP5310TA
BCP5310TA
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Diodes Incorporated
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 - - - - - - - - 1 A 63 @ 150mA, 2V - - - 150MHz - - Surface Mount -65°C ~ 150°C (TJ) 2 W - - SOT-223-3 - PNP 500mV @ 50mA, 500mA 80 V
BC516-D27Z
BC516-D27Z
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On Semiconductor
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 - - - - - - - - 1 A 30000 @ 20mA, 2V - - - 200MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - PNP - Darlington 1V @ 100µA, 100mA 30 V
2SD1843-T-AZ
2SD1843-T-AZ
Renesas
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PBSS5350X,147
PBSS5350X,147
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Nexperia USA Inc.
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 - - - - - - - - 3 A 200 @ 1A, 2V - - - 100MHz - - Surface Mount 150°C (TJ) 1.6 W - - SOT-89 - PNP 390mV @ 300mA, 3A 50 V
PBSS5350X,146
PBSS5350X,146
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Nexperia USA Inc.
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 - - - - - - - - 3 A 200 @ 1A, 2V - - - 100MHz - - Surface Mount 150°C (TJ) 1.6 W - - SOT-89 - PNP 390mV @ 300mA, 3A 50 V
PBSS5350X,135
PBSS5350X,135
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Nexperia USA Inc.
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 - - - - - - - - 3 A 200 @ 1A, 2V - - - 100MHz - - Surface Mount 150°C (TJ) 1.6 W - - SOT-89 - PNP 390mV @ 300mA, 3A 50 V
BCP54-10,135
BCP54-10,135
Nexperia USA Inc.
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 - - - - - - - - 1 A 63 @ 150mA, 2V - - - 180MHz - - Surface Mount 150°C (TJ) 650 mW - - SOT-223 - NPN 500mV @ 50mA, 500mA 45 V
CMPTA92 TR
CMPTA92 TR
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Central Semiconductor Corp
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 - - - - - - - - 500 mA 25 @ 30mA, 10V - - - 50MHz - - Surface Mount -65°C ~ 150°C (TJ) 350 mW - - SOT-23 - PNP 500mV @ 2mA, 20mA 300 V
PN2222TF
PN2222TF
On Semiconductor
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 - - - - - - - - 600 mA 100 @ 150mA, 10mV - - - 300MHz - - Through Hole 150°C (TJ) 625 mW - - TO-92-3 - NPN 1V @ 50mA, 500mA 30 V
PBSS4230T,215
PBSS4230T,215
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Nexperia USA Inc.
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 - - - - - - - - 2 A 300 @ 1A, 2V - - - 230MHz - - Surface Mount 150°C (TJ) 480 mW - - TO-236AB - NPN 320mV @ 200mA, 2A 30 V
2SD1949T106Q
2SD1949T106Q
ROHM Semiconductor
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 - - - - - - - - 500 mA 120 @ 10mA, 3V - - - 250MHz - - Surface Mount 150°C (TJ) 200 mW - - UMT3 - NPN 400mV @ 15mA, 150mA 50 V
CMPT2369 TR PBFREE
CMPT2369 TR PBFREE
Download Datasheet for CMPT2369 TR PBFREE
Central Semiconductor Corp
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 - - - - - - - - 500 mA 40 @ 10mA, 1V - - - 500MHz - - Surface Mount -65°C ~ 150°C (TJ) 350 mW - - SOT-23 - NPN 250mV @ 1mA, 10mA 15 V
FMMT495TC
FMMT495TC
Download Datasheet for FMMT495TC
Diodes Incorporated
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 - - - - - - - - 1 A 10 @ 250mA, 10V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 500 mW - - SOT-23-3 - NPN 300mV @ 50mA, 500mA 150 V
FMMT555TC
FMMT555TC
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Diodes Incorporated
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 - - - - - - - - 1 A 50 @ 300mA, 10V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 500 mW - - SOT-23-3 - PNP 300mV @ 10mA, 100mA 150 V
PZT3904-TP
PZT3904-TP
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Micro Commercial
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 - - - - - - - - 200 mA 100 @ 10mA, 1V - - - 300MHz - - Surface Mount -55°C ~ 150°C (TJ) 1 W - - SOT-223 - NPN 300mV @ 5mA, 50mA 40 V
BC517-D74Z
BC517-D74Z
On Semiconductor
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 - - - - - - - - 1.2 A 30000 @ 20mA, 2V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN - Darlington 1V @ 100µA, 100mA 30 V
PBSS4240XF
PBSS4240XF
Download Datasheet for PBSS4240XF
Nexperia USA Inc.
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 - - - - - - - - 2 A 300 @ 500mA, 5V - - - 150MHz - - Surface Mount 150°C (TJ) 500 mW - - SOT-89 - NPN 140mV @ 50mA, 500mA 40 V
2SA673CTZ
2SA673CTZ
Renesas
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PBSS4350X,147
PBSS4350X,147
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Nexperia USA Inc.
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 - - - - - - - - 3 A 300 @ 1A, 2V - - - 100MHz - - Surface Mount 150°C (TJ) 1.6 W - - SOT-89 - NPN 370mV @ 300mA, 3A 50 V
PBSS4350X,146
PBSS4350X,146
Download Datasheet for PBSS4350X,146
Nexperia USA Inc.
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 - - - - - - - - 3 A 300 @ 1A, 2V - - - 100MHz - - Surface Mount 150°C (TJ) 1.6 W - - SOT-89 - NPN 370mV @ 300mA, 3A 50 V
FMMTL618TA
FMMTL618TA
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Diodes Incorporated
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 - - - - - - - - 1.25 A 250 @ 500mA, 2V - - - 195MHz - - Surface Mount -55°C ~ 150°C (TJ) 500 mW - - SOT-23-3 - NPN 350mV @ 200mA, 2A 20 V
BCX56,135
BCX56,135
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Nexperia USA Inc.
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 - - - - - - - - 1 A 63 @ 150mA, 2V - - - 180MHz - - Surface Mount 150°C (TJ) 1.25 W - - SOT-89 - NPN 500mV @ 50mA, 500mA 80 V
BCX54-16,135
BCX54-16,135
Nexperia USA Inc.
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 - - - - - - - - 1 A 100 @ 150mA, 2V - - - 180MHz - - Surface Mount 150°C (TJ) 1.25 W - - SOT-89 - NPN 500mV @ 50mA, 500mA 45 V
BCP56-16,135
BCP56-16,135
Download Datasheet for BCP56-16,135
Nexperia USA Inc.
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 - - - - - - - - 1 A 100 @ 150mA, 2V - - - 180MHz - - Surface Mount 150°C (TJ) 960 mW - - SOT-223 - NPN 500mV @ 50mA, 500mA 80 V
BCP54-16,135
BCP54-16,135
Nexperia USA Inc.
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 - - - - - - - - 1 A 100 @ 150mA, 2V - - - 180MHz - - Surface Mount 150°C (TJ) 960 mW - - SOT-223 - NPN 500mV @ 50mA, 500mA 45 V
BCP56-10,115
BCP56-10,115
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Nexperia USA Inc.
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 - - - - - - - - 1 A 63 @ 150mA, 2V - - - 180MHz - - Surface Mount 150°C (TJ) 960 mW - - SOT-223 - NPN 500mV @ 50mA, 500mA 80 V
2SA673AD-E
2SA673AD-E
Renesas
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BCP51-16,135
BCP51-16,135
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Nexperia USA Inc.
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 - - - - - - - - 1 A 100 @ 150mA, 2V - - - 145MHz - - Surface Mount 150°C (TJ) 1 W - - SOT-223 - PNP 500mV @ 50mA, 500mA 45 V
KSD1616AGTA
KSD1616AGTA
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On Semiconductor
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 - - - - - - - - 1 A 200 @ 100mA, 2V - - - 160MHz - - Through Hole 150°C (TJ) 750 mW - - TO-92-3 - NPN 300mV @ 50mA, 1A 60 V
2SC5876U3T106
2SC5876U3T106
ROHM Semiconductor
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 - - - - - - - - 500 mA 120 @ 50mA, 2V - - - 300MHz - - Surface Mount 150°C (TJ) 200 mW - - UMT3 - NPN 300mV @ 10mA, 100mA 60 V
MMBTA44-G
MMBTA44-G
Comchip Technology
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 - - - - - - - - 200 mA 50 @ 10mA, 10V - - - - - - Surface Mount 150°C (TJ) 350 mW - - SOT-23-3 - NPN 750mV @ 5mA, 50mA 400 V
PZT2907A,115
PZT2907A,115
Download Datasheet for PZT2907A,115
Nexperia USA Inc.
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 200MHz - - Surface Mount 150°C (TJ) 1.15 W - - SOT-223 - PNP 1.6V @ 50mA, 500mA 60 V
PZT2907A,135
PZT2907A,135
Download Datasheet for PZT2907A,135
Nexperia USA Inc.
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 200MHz - - Surface Mount 150°C (TJ) 1.15 W - - SOT-223 - PNP 1.6V @ 50mA, 500mA 60 V
2SC3906KT146S
2SC3906KT146S
ROHM Semiconductor
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 - - - - - - - - 50 mA 180 @ 2mA, 6V - - - 140MHz - - Surface Mount 150°C (TJ) 200 mW - - SMT3 - NPN 500mV @ 1mA, 10mA 120 V
2SB1694T106
2SB1694T106
ROHM Semiconductor
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 - - - - - - - - 1 A 270 @ 100mA, 2V - - - 320MHz - - Surface Mount 150°C (TJ) 200 mW - - UMT3 - PNP 380mV @ 25mA, 500mA 30 V
2SCR293P5T100
2SCR293P5T100
ROHM Semiconductor
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 - - - - - - - - 1 A 270 @ 100mA, 2V - - - 320MHz - - Surface Mount 150°C (TJ) 500 mW - - MPT3 - NPN 350mV @ 25mA, 500mA 30 V
PBSS4330X,135
PBSS4330X,135
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Nexperia USA Inc.
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 - - - - - - - - 3 A 270 @ 1A, 2V - - - 100MHz - - Surface Mount 150°C (TJ) 1.6 W - - SOT-89 - NPN 300mV @ 300mA, 3A 30 V
PZT2222A,135
PZT2222A,135
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Nexperia USA Inc.
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 300MHz - - Surface Mount 150°C (TJ) 1.15 W - - SOT-223 - NPN 1V @ 50mA, 500mA 40 V
DSS30101L-7
DSS30101L-7
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Diodes Incorporated
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 - - - - - - - - 1 A 300 @ 500mA, 5V - - - 250MHz - - Surface Mount -55°C ~ 150°C (TJ) 600 mW - - SOT-23-3 - NPN 200mV @ 100mA, 1A 30 V
CMPT6517 TR PBFREE
CMPT6517 TR PBFREE
Download Datasheet for CMPT6517 TR PBFREE
Central Semiconductor Corp
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 - - - - - - - - 500 mA 20 @ 50mA, 10V - - - 200MHz - - Surface Mount -65°C ~ 150°C (TJ) 350 mW - - SOT-23 - NPN 1V @ 5mA, 50mA 350 V
2SB1002CJ90TL
2SB1002CJ90TL
Renesas
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PBHV9050T,215
PBHV9050T,215
Download Datasheet for PBHV9050T,215
Nexperia USA Inc.
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 - - - - - - - - 150 mA 80 @ 50mA, 10V - - - 50MHz - - Surface Mount 150°C (TJ) 300 mW - - TO-236AB - PNP 200mV @ 10mA, 50mA 500 V
PBSS9110X,135
PBSS9110X,135
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Nexperia USA Inc.
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 - - - - - - - - 1 A 150 @ 500mA, 5V - - - 100MHz - - Surface Mount 150°C (TJ) 2 W - - SOT-89 - PNP 320mV @ 100mA, 1A 100 V
NSV40201LT1G
NSV40201LT1G
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On Semiconductor
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 - - - - - - - - 2 A 200 @ 500mA, 2V - - - 150MHz - - Surface Mount -55°C ~ 150°C (TJ) 460 mW - - SOT-23-3 (TO-236) - NPN 115mV @ 200mA, 2A 40 V
Showing 4101-4150 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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