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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
SBC847CLT1G
SBC847CLT1G
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On Semiconductor
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 - - - - - - - - 100 mA 420 @ 2mA, 5V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 300 mW - - SOT-23-3 (TO-236) - NPN 600mV @ 5mA, 100mA 45 V
2N5551TF
2N5551TF
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On Semiconductor
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 - - - - - - - - 600 mA 80 @ 10mA, 5V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN 200mV @ 5mA, 50mA 160 V
2SA1152-A
2SA1152-A
Renesas
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2SA2029T2LQ
2SA2029T2LQ
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ROHM Semiconductor
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 - - - - - - - - 150 mA 120 @ 1mA, 6V - - - 140MHz - - Surface Mount 150°C (TJ) 150 mW - - VMT3 - PNP 500mV @ 5mA, 50mA 50 V
PMMT591A,235
PMMT591A,235
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Nexperia USA Inc.
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 - - - - - - - - 1 A 300 @ 100mA, 5V - - - 150MHz - - Surface Mount 150°C (TJ) 250 mW - - TO-236AB - PNP 500mV @ 100mA, 1A 40 V
PMMT491A,235
PMMT491A,235
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Nexperia USA Inc.
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 - - - - - - - - 1 A 300 @ 500mA, 5V - - - 150MHz - - Surface Mount 150°C (TJ) 250 mW - - TO-236AB - NPN 500mV @ 100mA, 1A 40 V
UMT3906T106
UMT3906T106
ROHM Semiconductor
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 - - - - - - - - 200 mA 100 @ 10mA, 1V - - - 250MHz - - Surface Mount 150°C (TJ) 200 mW - - UMT3 - PNP 400mV @ 5mA, 50mA 40 V
BC857CE6327HTSA1
BC857CE6327HTSA1
Download Datasheet for BC857CE6327HTSA1
Infineon Technologies
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 - - - - - - - - 100 mA 420 @ 2mA, 5V - - - 250MHz - - Surface Mount 150°C (TJ) 330 mW - - PG-SOT23 - PNP 650mV @ 5mA, 100mA 45 V
BC857BE6327HTSA1
BC857BE6327HTSA1
Download Datasheet for BC857BE6327HTSA1
Infineon Technologies
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 - - - - - - - - 100 mA 220 @ 2mA, 5V - - - 250MHz - - Surface Mount 150°C (TJ) 330 mW - - PG-SOT23 - PNP 650mV @ 5mA, 100mA 45 V
DSS4160U-7
DSS4160U-7
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Diodes Incorporated
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 - - - - - - - - 1 A 200 @ 500mA, 5V - - - 150MHz - - Surface Mount -55°C ~ 150°C (TJ) 400 mW - - SOT-323 - NPN 280mV @ 100mA, 1A 60 V
2SC4213BTE85LF
2SC4213BTE85LF
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Toshiba
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 - - - - - - - - 300 mA 350 @ 4mA, 2V - - - 30MHz - - Surface Mount 125°C (TJ) 100 mW - - SC-70 - NPN 100mV @ 3mA, 30A 20 V
UMT3904T106
UMT3904T106
ROHM Semiconductor
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 - - - - - - - - 200 mA 100 @ 10mA, 1V - - - 300MHz - - Surface Mount 150°C (TJ) 200 mW - - UMT3 - NPN 300mV @ 5mA, 50mA 40 V
2SC4308TZ-E
2SC4308TZ-E
Renesas
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BC817K25E6327HTSA1
BC817K25E6327HTSA1
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Infineon Technologies
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 - - - - - - - - 500 mA 160 @ 100mA, 1V - - - 170MHz - - Surface Mount 150°C (TJ) 500 mW - - PG-SOT23 - NPN 700mV @ 50mA, 500mA 45 V
BC817K16E6327HTSA1
BC817K16E6327HTSA1
Download Datasheet for BC817K16E6327HTSA1
Infineon Technologies
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 - - - - - - - - 500 mA 100 @ 100mA, 1V - - - 170MHz - - Surface Mount 150°C (TJ) 500 mW - - PG-SOT23 - NPN 700mV @ 50mA, 500mA 45 V
2SA1162-Y,LXHF
2SA1162-Y,LXHF
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Toshiba
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 - - - - - - - - 150 mA 120 @ 2mA, 6V - - - 80MHz - - Surface Mount 125°C (TJ) 200 mW - - S-Mini - PNP 300mV @ 10mA, 100mA 50 V
BCX70KE6327HTSA1
BCX70KE6327HTSA1
Download Datasheet for BCX70KE6327HTSA1
Infineon Technologies
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 - - - - - - - - 100 mA 380 @ 2mA, 5V - - - 250MHz - - Surface Mount 150°C (TJ) 330 mW - - PG-SOT23 - NPN 550mV @ 1.25mA, 50mA 45 V
MMBT2907ALT1HTSA1
MMBT2907ALT1HTSA1
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Infineon Technologies
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 200MHz - - Surface Mount 150°C (TJ) 330 mW - - PG-SOT23 - PNP 1.6V @ 50mA, 500mA 60 V
MMBT2222ALT1HTSA1
MMBT2222ALT1HTSA1
Download Datasheet for MMBT2222ALT1HTSA1
Infineon Technologies
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 300MHz - - Surface Mount 150°C (TJ) 330 mW - - PG-SOT23 - NPN 1V @ 50mA, 500mA 40 V
MMBT3906LT1HTSA1
MMBT3906LT1HTSA1
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Infineon Technologies
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 - - - - - - - - 200 mA 100 @ 10mA, 1V - - - 250MHz - - Surface Mount 150°C (TJ) 330 mW - - PG-SOT23 - PNP 400mV @ 5mA, 50mA 40 V
2SAR502U3T106
2SAR502U3T106
ROHM Semiconductor
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 - - - - - - - - 500 mA 200 @ 100mA, 2V - - - 520MHz - - Surface Mount 150°C (TJ) 200 mW - - UMT3 - PNP 400mV @ 10mA, 200mA 30 V
SMBT3906E6327HTSA1
SMBT3906E6327HTSA1
Download Datasheet for SMBT3906E6327HTSA1
Infineon Technologies
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 - - - - - - - - 200 mA 100 @ 10mA, 1V - - - 250MHz - - Surface Mount 150°C (TJ) 330 mW - - PG-SOT23 - PNP 400mV @ 5mA, 50mA 40 V
DSS4240V-7
DSS4240V-7
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Diodes Incorporated
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 - - - - - - - - 2 A 300 @ 500mA, 5V - - - 150MHz - - Surface Mount -55°C ~ 150°C (TJ) 600 mW - - SOT-563 - NPN 400mV @ 200mA, 2A 40 V
2SD1484KT146Q
2SD1484KT146Q
ROHM Semiconductor
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 - - - - - - - - 500 mA 120 @ 10mA, 3V - - - 250MHz - - Surface Mount 150°C (TJ) 200 mW - - SMT3 - NPN 400mV @ 15mA, 150mA 50 V
2SB564-AZ
2SB564-AZ
Renesas
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BC557ATA
BC557ATA
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On Semiconductor
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 - - - - - - - - 100 mA 110 @ 2mA, 5V - - - 150MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - PNP 650mV @ 5mA, 100mA 45 V
BC636TA
BC636TA
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On Semiconductor
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 - - - - - - - - 1 A 40 @ 150mA, 2V - - - 100MHz - - Through Hole 150°C (TJ) 1 W - - TO-92-3 - PNP 500mV @ 50mA, 500mA 45 V
SMMBT3904WT1G
SMMBT3904WT1G
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On Semiconductor
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 - - - - - - - - 200 mA 100 @ 10mA, 1V - - - 300MHz - - Surface Mount -55°C ~ 150°C (TJ) 150 mW - - SC-70-3 (SOT323) - NPN 300mV @ 5mA, 50mA 40 V
KSC1008YTA
KSC1008YTA
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On Semiconductor
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 - - - - - - - - 700 mA 120 @ 50mA, 2V - - - 50MHz - - Through Hole 150°C (TJ) 800 mW - - TO-92-3 - NPN 400mV @ 50mA, 500mA 60 V
SS8550DTA
SS8550DTA
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On Semiconductor
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 - - - - - - - - 1.5 A 160 @ 100mA, 1V - - - 200MHz - - Through Hole 150°C (TJ) 1 W - - TO-92-3 - PNP 500mV @ 80mA, 800mA 25 V
BF820,235
BF820,235
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Nexperia USA Inc.
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 - - - - - - - - 50 mA 50 @ 25mA, 20V - - - 60MHz - - Surface Mount 150°C (TJ) 250 mW - - TO-236AB - NPN 600mV @ 5mA, 30mA 300 V
BF823,215
BF823,215
Download Datasheet for BF823,215
Nexperia USA Inc.
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 - - - - - - - - 50 mA 50 @ 25mA, 20V - - - 60MHz - - Surface Mount 150°C (TJ) 250 mW - - TO-236AB - PNP 800mV @ 5mA, 30mA 250 V
2SC4083T106N
2SC4083T106N
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ROHM Semiconductor
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 - - - - - - - - 50 mA 56 @ 5mA, 10V - - - 3.2GHz - - Surface Mount 150°C (TJ) 200 mW - - UMT3 - NPN 500mV @ 5mA, 10mA 11 V
ZXTN4240F-7
ZXTN4240F-7
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Diodes Incorporated
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 - - - - - - - - 2 A 300 @ 1A, 2V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 730 mW - - SOT-23-3 - NPN 320mV @ 200mA, 2A 40 V
BC56PA,115
BC56PA,115
Download Datasheet for BC56PA,115
Nexperia USA Inc.
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 - - - - - - - - 1 A 63 @ 150mA, 2V - - - 180MHz - - Surface Mount 150°C (TJ) 420 mW - - 3-HUSON (2x2) - NPN 500mV @ 50mA, 500mA 80 V
BCX53-16TF
BCX53-16TF
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Nexperia USA Inc.
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 - - - - - - - - 1 A 100 @ 150mA, 2V - - - 140MHz - - Surface Mount 150°C (TJ) 500 mW - - SOT-89 - PNP 500mV @ 50mA, 500mA 80 V
CMST3904 TR PBFREE
CMST3904 TR PBFREE
Download Datasheet for CMST3904 TR PBFREE
Central Semiconductor Corp
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 - - - - - - - - 200 mA 100 @ 10mA, 1V - - - 300MHz - - Surface Mount -65°C ~ 150°C (TJ) 275 mW - - SOT-323 - NPN 300mV @ 5mA, 50mA 40 V
2SB772-AZ
2SB772-AZ
Renesas
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PBSS5140T,215
PBSS5140T,215
Download Datasheet for PBSS5140T,215
Nexperia USA Inc.
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 - - - - - - - - 1 A 300 @ 100mA, 5V - - - 150MHz - - Surface Mount 150°C (TJ) 450 mW - - TO-236AB - PNP 500mV @ 100mA, 1A 40 V
PBSS4120T,215
PBSS4120T,215
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Nexperia USA Inc.
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 - - - - - - - - 1 A 300 @ 500mA, 2V - - - 100MHz - - Surface Mount 150°C (TJ) 480 mW - - TO-236AB - NPN 250mV @ 50mA, 1A 20 V
PBSS4140T,235
PBSS4140T,235
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Nexperia USA Inc.
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 - - - - - - - - 1 A 300 @ 500mA, 5V - - - 150MHz - - Surface Mount 150°C (TJ) 450 mW - - TO-236AB - NPN 500mV @ 100mA, 1A 40 V
ZXTP5240F-7
ZXTP5240F-7
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Diodes Incorporated
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 - - - - - - - - 2 A 300 @ 100mA, 2V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 730 mW - - SOT-23-3 - PNP 350mV @ 200mA, 2A 40 V
BCV47 TR PBFREE
BCV47 TR PBFREE
Download Datasheet for BCV47 TR PBFREE
Central Semiconductor Corp
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 - - - - - - - - 500 mA 10000 @ 100mA, 5V - - - 220MHz - - Surface Mount -65°C ~ 150°C (TJ) 350 mW - - SOT-23 - NPN - Darlington 1V @ 100µA, 100mA 60 V
MMBT3906LP-7B
MMBT3906LP-7B
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Diodes Incorporated
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 - - - - - - - - 200 mA 100 @ 10mA, 1V - - - 300MHz - - Surface Mount -55°C ~ 150°C (TJ) 250 mW - - X1-DFN1006-3 - PNP 400mV @ 5mA, 50mA 40 V
BSR16,215
BSR16,215
Download Datasheet for BSR16,215
Nexperia USA Inc.
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 200MHz - - Surface Mount 150°C (TJ) 250 mW - - TO-236AB - PNP 1.6V @ 50mA, 500mA 60 V
2SC3209-T-AZ
2SC3209-T-AZ
Renesas
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2SD1781A_R1_00001
2SD1781A_R1_00001
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PANJIT
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 - - - - - - - - 3 A 300 @ 500mA, 5V - - - 250MHz - - Surface Mount -55°C ~ 150°C (TJ) 1.25 W - - SOT-23 - NPN 140mV @ 100mA, 1A 50 V
BCX56-10TX
BCX56-10TX
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Nexperia USA Inc.
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 - - - - - - - - 1 A 63 @ 150mA, 2V - - - 155MHz - - Surface Mount 150°C (TJ) 500 mW - - SOT-89 - NPN 500mV @ 50mA, 500mA 80 V
BCX56TX
BCX56TX
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Nexperia USA Inc.
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 - - - - - - - - 1 A 63 @ 150mA, 2V - - - 155MHz - - Surface Mount 150°C (TJ) 500 mW - - SOT-89 - NPN 500mV @ 50mA, 500mA 80 V
MMBT3904FA-7B
MMBT3904FA-7B
Download Datasheet for MMBT3904FA-7B
Diodes Incorporated
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 - - - - - - - - 200 mA 100 @ 10mA, 1V - - - 300MHz - - Surface Mount -55°C ~ 150°C (TJ) 435 mW - - X2-DFN0806-3 - NPN 300mV @ 5mA, 50mA 40 V
Showing 4051-4100 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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