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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Current DC Current Gain (hFE) (Min) @ Ic, Vce Frequency Mounting Type Operating Temperature Power Supplier Device Package Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
KSD1020GTA
KSD1020GTA
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 700 mA 200 @ 100mA, 1V 170MHz Through Hole 150°C (TJ) 350 mW TO-92S NPN 400mV @ 70mA, 700mA 25 V
KSB564ACOBU
KSB564ACOBU
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 1 A 70 @ 100mA, 1V 110MHz Through Hole 150°C (TJ) 800 mW TO-92-3 PNP 500mV @ 100mA, 1A 25 V
KSC5019NTA
KSC5019NTA
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 2 A 300 @ 500mA, 1V 150MHz Through Hole 150°C (TJ) 750 mW TO-92-3 NPN 500mV @ 50mA, 2A 10 V
FJX733OTF
FJX733OTF
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 150 mA 70 @ 1mA, 6V 180MHz Surface Mount 150°C (TJ) 200 mW SOT-323 PNP 300mV @ 10mA, 100mA 50 V
KSC2710YTA
KSC2710YTA
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 500 mA 120 @ 100mA, 1V - Through Hole 150°C (TJ) 300 mW TO-92S NPN 400mV @ 50mA, 500mA 20 V
KSA709CGTA
KSA709CGTA
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 700 mA 200 @ 50mA, 2V 50MHz Through Hole 150°C (TJ) 800 mW TO-92-3 PNP 400mV @ 20mA, 200mA 150 V
KSA709YBU
KSA709YBU
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 700 mA 120 @ 50mA, 2V 50MHz Through Hole 150°C (TJ) 800 mW TO-92-3 PNP 400mV @ 20mA, 200mA 150 V
KSD1021GBU
KSD1021GBU
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 1 A 200 @ 100mA, 1V 130MHz Through Hole 150°C (TJ) 350 mW TO-92S NPN 500mV @ 100mA, 1A 30 V
KSC2710YBU
KSC2710YBU
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 500 mA 120 @ 100mA, 1V - Through Hole 150°C (TJ) 300 mW TO-92S NPN 400mV @ 50mA, 500mA 20 V
KSA910YSHTA
KSA910YSHTA
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 50 mA 120 @ 10mA, 5V 100MHz Through Hole - 800 mW TO-92-3 PNP 800mV @ 1mA, 10mA 150 V
KSC2710GTA
KSC2710GTA
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 500 mA 200 @ 100mA, 1V - Through Hole 150°C (TJ) 300 mW TO-92S NPN 400mV @ 50mA, 500mA 20 V
KSB810YTA
KSB810YTA
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 700 mA 120 @ 100mA, 1V 160MHz Through Hole 150°C (TJ) 350 mW TO-92S PNP 400mV @ 70mA, 700mA 25 V
KSD1021GTA
KSD1021GTA
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 1 A 200 @ 100mA, 1V 130MHz Through Hole 150°C (TJ) 350 mW TO-92S NPN 500mV @ 100mA, 1A 30 V
KSD1021YTA
KSD1021YTA
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 1 A 120 @ 100mA, 1V 130MHz Through Hole 150°C (TJ) 350 mW TO-92S NPN 500mV @ 100mA, 1A 30 V
KSA709OBU
KSA709OBU
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 700 mA 70 @ 50mA, 2V 50MHz Through Hole 150°C (TJ) 800 mW TO-92-3 PNP 400mV @ 20mA, 200mA 150 V
KSA709COTA
KSA709COTA
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 700 mA 70 @ 50mA, 2V 50MHz Through Hole 150°C (TJ) 800 mW TO-92-3 PNP 400mV @ 20mA, 200mA 150 V
KSA709CYBU
KSA709CYBU
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 700 mA 120 @ 50mA, 2V 50MHz Through Hole 150°C (TJ) 800 mW TO-92-3 PNP 400mV @ 20mA, 200mA 150 V
KSA709CYTA
KSA709CYTA
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 700 mA 120 @ 50mA, 2V 50MHz Through Hole 150°C (TJ) 800 mW TO-92-3 PNP 400mV @ 20mA, 200mA 150 V
KSD1020GBU
KSD1020GBU
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 700 mA 200 @ 100mA, 1V 170MHz Through Hole 150°C (TJ) 350 mW TO-92S NPN 400mV @ 70mA, 700mA 25 V
KSD1020YTA
KSD1020YTA
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 700 mA 120 @ 100mA, 1V 170MHz Through Hole 150°C (TJ) 350 mW TO-92S NPN 400mV @ 70mA, 700mA 25 V
KSA709COBU
KSA709COBU
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 700 mA 70 @ 50mA, 2V 50MHz Through Hole 150°C (TJ) 800 mW TO-92-3 PNP 400mV @ 20mA, 200mA 150 V
KSP62TA
KSP62TA
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 500 mA 20000 @ 10mA, 5V 125MHz Through Hole 150°C (TJ) 625 mW TO-92-3 PNP - Darlington 1V @ 10µA, 10mA 20 V
FJX945YTF
FJX945YTF
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 150 mA 120 @ 1mA, 6V 300MHz Surface Mount 150°C (TJ) 200 mW SOT-323 NPN 300mV @ 10mA, 100mA 50 V
KSP94BU
KSP94BU
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 300 mA 50 @ 10mA, 10V - Through Hole 150°C (TJ) 625 mW TO-92-3 PNP 750mV @ 5mA, 50mA 400 V
KSA1150OTA
KSA1150OTA
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 500 mA 70 @ 100mA, 1V - Through Hole 150°C (TJ) 300 mW TO-92S PNP 400mV @ 50mA, 500mA 20 V
KSA1150YTA
KSA1150YTA
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 500 mA 120 @ 100mA, 1V - Through Hole 150°C (TJ) 300 mW TO-92S PNP 400mV @ 50mA, 500mA 20 V
KSA709OTA
KSA709OTA
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 700 mA 70 @ 50mA, 2V 50MHz Through Hole 150°C (TJ) 800 mW TO-92-3 PNP 400mV @ 20mA, 200mA 150 V
FJX1182OTF
FJX1182OTF
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 500 mA 70 @ 100mA, 1V 200MHz Surface Mount 150°C (TJ) 150 mW SOT-323 PNP 250mV @ 10mA, 100mA 30 V
BDW73A-S
BDW73A-S
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Bourns
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 8 A 750 @ 3A, 3V - Through Hole -65°C ~ 150°C (TJ) 2 W TO-220 NPN - Darlington 4V @ 80mA, 8A 60 V
KSP63TF
KSP63TF
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 500 mA 10000 @ 100mA, 5V 125MHz Through Hole 150°C (TJ) 625 mW TO-92-3 PNP - Darlington 1.5V @ 100µA, 100mA 30 V
KSA709CGBU
KSA709CGBU
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 700 mA 200 @ 50mA, 2V 50MHz Through Hole 150°C (TJ) 800 mW TO-92-3 PNP 400mV @ 20mA, 200mA 150 V
KSD261CYTA
KSD261CYTA
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 500 mA 120 @ 100mA, 1V - Through Hole 150°C (TJ) 500 mW TO-92-3 NPN 400mV @ 50mA, 500mA 20 V
KSD261CGBU
KSD261CGBU
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 500 mA 200 @ 100mA, 1V - Through Hole 150°C (TJ) 500 mW TO-92-3 NPN 400mV @ 50mA, 500mA 20 V
KSD261YBU
KSD261YBU
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 500 mA 120 @ 100mA, 1V - Through Hole 150°C (TJ) 500 mW TO-92-3 NPN 400mV @ 50mA, 500mA 20 V
KSP64BU
KSP64BU
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 500 mA 20000 @ 100mA, 5V 125MHz Through Hole 150°C (TJ) 625 mW TO-92-3 PNP - Darlington 1.5V @ 100µA, 100mA 30 V
KSP62BU
KSP62BU
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 500 mA 20000 @ 10mA, 5V 125MHz Through Hole 150°C (TJ) 625 mW TO-92-3 PNP - Darlington 1V @ 10µA, 10mA 20 V
KSP64TA
KSP64TA
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 500 mA 20000 @ 100mA, 5V 125MHz Through Hole 150°C (TJ) 625 mW TO-92-3 PNP - Darlington 1.5V @ 100µA, 100mA 30 V
KSP63BU
KSP63BU
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 500 mA 10000 @ 100mA, 5V 125MHz Through Hole 150°C (TJ) 625 mW TO-92-3 PNP - Darlington 1.5V @ 100µA, 100mA 30 V
KSP62TF
KSP62TF
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 500 mA 20000 @ 10mA, 5V 125MHz Through Hole 150°C (TJ) 625 mW TO-92-3 PNP - Darlington 1V @ 10µA, 10mA 20 V
KSP63TA
KSP63TA
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 500 mA 10000 @ 100mA, 5V 125MHz Through Hole 150°C (TJ) 625 mW TO-92-3 PNP - Darlington 1.5V @ 100µA, 100mA 30 V
2SA1973-5-TB-E-ON
2SA1973-5-TB-E-ON
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KSD261GTA
KSD261GTA
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 500 mA 200 @ 100mA, 1V - Through Hole 150°C (TJ) 500 mW TO-92-3 NPN 400mV @ 50mA, 500mA 20 V
KSD261YTA
KSD261YTA
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 500 mA 120 @ 100mA, 1V - Through Hole 150°C (TJ) 500 mW TO-92-3 NPN 400mV @ 50mA, 500mA 20 V
KSB811OBU
KSB811OBU
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 1 A 70 @ 100mA, 1V 110MHz Through Hole 150°C (TJ) 350 mW TO-92S PNP 500mV @ 100mA, 1A 25 V
KSB811YBU
KSB811YBU
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 1 A 120 @ 100mA, 1V 110MHz Through Hole 150°C (TJ) 350 mW TO-92S PNP 500mV @ 100mA, 1A 25 V
KSB811GBU
KSB811GBU
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 1 A 200 @ 100mA, 1V 110MHz Through Hole 150°C (TJ) 350 mW TO-92S PNP 500mV @ 100mA, 1A 25 V
KSB811GTA
KSB811GTA
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 1 A 200 @ 100mA, 1V 110MHz Through Hole 150°C (TJ) 350 mW TO-92S PNP 500mV @ 100mA, 1A 25 V
KSB811OTA
KSB811OTA
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 1 A 70 @ 100mA, 1V 110MHz Through Hole 150°C (TJ) 350 mW TO-92S PNP 500mV @ 100mA, 1A 25 V
KSP05BU
KSP05BU
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 500 mA 50 @ 100mA, 1V 100MHz Through Hole 150°C (TJ) 625 mW TO-92-3 NPN 250mV @ 10mA, 100mA 60 V
PN4141
PN4141
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 500 mA 100 @ 150mA, 10V - Through Hole - 625 mW TO-92-3 NPN 1.6V @ 50mA, 500mA 30 V
Showing 14401-14450 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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