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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
BUT12AX,127
BUT12AX,127
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NXP Semiconductors
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 - - - - - - - - 8 A 10 @ 1A, 5V - - - - - - Through Hole 150°C (TJ) 23 W - - TO-220F - NPN 1.5V @ 1A, 5A 450 V
PBSS5140V,315
PBSS5140V,315
Download Datasheet for PBSS5140V,315
NXP Semiconductors
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 - - - - - - - - 1 A 300 @ 100mA, 5V - - - 150MHz - - Surface Mount 150°C (TJ) 500 mW - - SOT-666 - PNP 310mV @ 100mA, 1A 40 V
PHD13005AD,127
PHD13005AD,127
NXP Semiconductors
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 - - - - - - - - 4 A - - - - - - - Surface Mount - - - - DPAK - NPN - 700 V
LP395Z/LFT4
LP395Z/LFT4
Texas Instruments
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 - - - - - - - - - - - - - - - - Through Hole 0°C ~ 125°C (TA) - - - TO-92-3 - NPN - 36 V
BC857QASX
BC857QASX
NXP Semiconductors
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2PB1219AR/ZLX
2PB1219AR/ZLX
NXP Semiconductors
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2PD1820AR/ZLX
2PD1820AR/ZLX
NXP Semiconductors
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PMBT2907A/DLTR
PMBT2907A/DLTR
NXP Semiconductors
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PMBT2907A/MIGR
PMBT2907A/MIGR
NXP Semiconductors
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PMBT2907A/MIGVL
PMBT2907A/MIGVL
NXP Semiconductors
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PMBT3904/8,215
PMBT3904/8,215
NXP Semiconductors
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PMBT4403/MIGR
PMBT4403/MIGR
NXP Semiconductors
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BCP49H6359XTMA1
BCP49H6359XTMA1
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Infineon Technologies
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 - - - - - - - - 500 mA 10000 @ 100mA, 5V - - - 200MHz - - Surface Mount 150°C (TJ) 1.5 W - - PG-SOT223-4 - NPN - Darlington 1V @ 100µA, 100mA 60 V
BCP49H6419XTMA1
BCP49H6419XTMA1
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Infineon Technologies
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 - - - - - - - - 500 mA 10000 @ 100mA, 5V - - - 200MHz - - Surface Mount 150°C (TJ) 1.5 W - - PG-SOT223-4 - NPN - Darlington 1V @ 100µA, 100mA 60 V
BCP 51-16 H6778
BCP 51-16 H6778
Download Datasheet for BCP 51-16 H6778
Infineon Technologies
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 - - - - - - - - 1 A 100 @ 150mA, 2V - - - 125MHz - - Surface Mount 150°C (TJ) 2 W - - PG-SOT-143R-3D - PNP 500mV @ 50mA, 500mA 45 V
BCP 54-16 H6778
BCP 54-16 H6778
Download Datasheet for BCP 54-16 H6778
Infineon Technologies
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 - - - - - - - - 1 A 100 @ 150mA, 2V - - - 100MHz - - Surface Mount 150°C (TJ) 2 W - - PG-SOT223-4 - NPN 500mV @ 50mA, 500mA 45 V
BCP 54-16 H6779
BCP 54-16 H6779
Download Datasheet for BCP 54-16 H6779
Infineon Technologies
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 - - - - - - - - 1 A 100 @ 150mA, 2V - - - 100MHz - - Surface Mount 150°C (TJ) 2 W - - PG-SOT223-4 - NPN 500mV @ 50mA, 500mA 45 V
BCP55H6327XTSA1
BCP55H6327XTSA1
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Infineon Technologies
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 - - - - - - - - 1 A 40 @ 150mA, 2V - - - 100MHz - - Surface Mount 150°C (TJ) 2 W - - PG-SOT223-4-10 - NPN 500mV @ 50mA, 500mA 60 V
BCP 56-10 H6433
BCP 56-10 H6433
Download Datasheet for BCP 56-10 H6433
Infineon Technologies
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 - - - - - - - - 1 A 63 @ 150mA, 2V - - - 100MHz - - Surface Mount 150°C (TJ) 2 W - - PG-SOT223-4 - NPN 500mV @ 50mA, 500mA 80 V
BCP 68-25 H6327
BCP 68-25 H6327
Download Datasheet for BCP 68-25 H6327
Infineon Technologies
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 - - - - - - - - 1 A 160 @ 500mA, 1V - - - 100MHz - - Surface Mount 150°C (TJ) 3 W - - PG-SOT223-4 - NPN 500mV @ 100mA, 1A 20 V
BSP51H6327XTSA1
BSP51H6327XTSA1
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Infineon Technologies
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 - - - - - - - - 1 A 2000 @ 500mA, 10V - - - 200MHz - - Surface Mount 150°C (TJ) 1.5 W - - PG-SOT223-4 - NPN - Darlington 1.8V @ 1mA, 1A 60 V
2ST1480FP
2ST1480FP
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STMicroelectronics
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 - - - - - - - - 5 A 170 @ 500mA, 5V - - - 120MHz - - Through Hole 150°C (TJ) 25 W - - TO-220FP - NPN 1V @ 300mA, 3A 80 V
BUL741FP
BUL741FP
STMicroelectronics
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 - - - - - - - - 2.5 A 25 @ 450mA, 3V - - - - - - Through Hole 150°C (TJ) 30 W - - TO-220FP - NPN 1.5V @ 600mA, 2A 400 V
DSC250100L
DSC250100L
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Panasonic Electronic Components
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 - - - - - - - - 500 mA 200 @ 500mA, 2V - - - 150MHz - - Surface Mount 150°C (TJ) 200 mW - - Mini3-G3-B-B - NPN 400mV @ 20mA, 500mA 20 V
DSC2C01S0L
DSC2C01S0L
Panasonic Electronic Components
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 - - - - - - - - 20 mA 600 @ 2mA, 10V - - - 140MHz - - Surface Mount 150°C (TJ) 200 mW - - MINI3-G3-B - NPN 200mV @ 1mA, 10mA 100 V
2STA1837
2STA1837
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STMicroelectronics
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 - - - - - - - - 1 A 100 @ 100mA, 5V - - - 70MHz - - Through Hole 150°C (TJ) 20 W - - TO-220FP - PNP 1V @ 50mA, 500mA 230 V
2STC4793
2STC4793
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STMicroelectronics
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 - - - - - - - - 1 A 100 @ 100mA, 5V - - - 100MHz - - Through Hole 150°C (TJ) 20 W - - TO-220FP - NPN 1V @ 50mA, 500mA 230 V
ST13003DN
ST13003DN
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STMicroelectronics
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 - - - - - - - - 1 A 6 @ 500mA, 2V - - - - - - Through Hole 150°C (TJ) 20 W - - SOT-32-3 - NPN 1.2V @ 330mA, 1A 400 V
STBV42D
STBV42D
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STMicroelectronics
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 - - - - - - - - 1 A 10 @ 400mA, 5V - - - - - - Through Hole 150°C (TJ) 1 W - - TO-92-3 - NPN 1.5V @ 250mA, 750mA 400 V
BC637RL1G
BC637RL1G
On Semiconductor
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 - - - - - - - - 1 A 40 @ 150mA, 2V - - - 200MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - NPN 500mV @ 50mA, 500mA 60 V
MSB92AS1WT1G
MSB92AS1WT1G
Download Datasheet for MSB92AS1WT1G
On Semiconductor
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 - - - - - - - - 500 mA 120 @ 1mA, 10V - - - 50MHz - - Surface Mount 150°C (TJ) 150 mW - - SC-70-3 (SOT323) - PNP 500mV @ 2mA, 20mA 300 V
PMST2369/ZLF
PMST2369/ZLF
NXP Semiconductors
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STT13005D-K
STT13005D-K
STMicroelectronics
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 - - - - - - - - 2 A 10 @ 500mA, 5V - - - - - - Through Hole 150°C (TJ) 45 W - - SOT-32-3 - NPN 1.5V @ 400mA, 1.6A 400 V
STX13004-AP
STX13004-AP
STMicroelectronics
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 - - - - - - - - 2 A 10 @ 1A, 5V - - - - - - Through Hole 150°C (TJ) 2.5 W - - TO-92AP - NPN 1V @ 500mA, 2A 400 V
STX13004G-AP
STX13004G-AP
STMicroelectronics
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 - - - - - - - - 2 A 10 @ 1A, 5V - - - - - - Through Hole 150°C (TJ) 2.5 W - - TO-92AP - NPN 1V @ 500mA, 2A 400 V
2STN2340
2STN2340
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STMicroelectronics
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 - - - - - - - - 3 A 180 @ 1A, 2V - - - 100MHz - - Surface Mount 150°C (TJ) 1.6 W - - SOT-223 - PNP 350mV @ 150mA, 3A 40 V
STX790A
STX790A
STMicroelectronics
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 - - - - - - - - 3 A 100 @ 500mA, 2V - - - 100MHz - - Through Hole 150°C (TJ) 900 mW - - TO-92-3 - PNP 700mV @ 100mA, 3A 30 V
BC846BT,115
BC846BT,115
Download Datasheet for BC846BT,115
NXP Semiconductors
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - 100MHz - - Surface Mount 150°C (TJ) 150 mW - - SC-75 - NPN 400mV @ 5mA, 100mA 65 V
BC857CT,115
BC857CT,115
Download Datasheet for BC857CT,115
NXP Semiconductors
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 - - - - - - - - 100 mA 420 @ 2mA, 5V - - - 100MHz - - Surface Mount 150°C (TJ) 150 mW - - SC-75 - PNP 400mV @ 5mA, 100mA 45 V
ZXTPS718MCTA
ZXTPS718MCTA
Diodes Incorporated
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 - - - - - - - - 3.5 A 150 @ 2A, 2V - - - 180MHz - - Surface Mount -55°C ~ 150°C (TJ) 3 W - - DFN3020B-8 - PNP + Diode (Isolated) 300mV @ 350mA, 3.5A 20 V
2SC5488-TL-E
2SC5488-TL-E
On Semiconductor
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 - - - - - - - - - - - - - - - - Surface Mount - - - - 3-SSFP - - - -
ZXTNS618MCTA
ZXTNS618MCTA
Diodes Incorporated
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 - - - - - - - - 4.5 A 200 @ 2A, 2V - - - 140MHz - - Surface Mount -55°C ~ 150°C (TJ) 3 W - - DFN3020B-8 - NPN + Diode (Isolated) 270mV @ 125mA, 4.5A 20 V
BC547B_J35Z
BC547B_J35Z
On Semiconductor
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - 300MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - NPN 600mV @ 5mA, 100mA 45 V
FJN3303FBU
FJN3303FBU
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On Semiconductor
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 - - - - - - - - 1.5 A 14 @ 500mA, 2V - - - 4MHz - - Through Hole 150°C (TJ) 650 mW - - TO-92-3 - NPN 3V @ 500mA, 1.5A 400 V
BC327-40ZL1G
BC327-40ZL1G
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On Semiconductor
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 - - - - - - - - 800 mA 250 @ 100mA, 1V - - - 260MHz - - Through Hole -55°C ~ 150°C (TJ) 1.5 W - - TO-92 (TO-226) - PNP 700mV @ 50mA, 500mA 45 V
BC557CZL1G
BC557CZL1G
Download Datasheet for BC557CZL1G
On Semiconductor
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 - - - - - - - - 100 mA 420 @ 2mA, 5V - - - 320MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - PNP 650mV @ 5mA, 100mA 45 V
MPSA42ZL1G
MPSA42ZL1G
Download Datasheet for MPSA42ZL1G
On Semiconductor
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 - - - - - - - - 500 mA 40 @ 30mA, 10V - - - 50MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - NPN 500mV @ 2mA, 20mA 300 V
BC237BRL1G
BC237BRL1G
On Semiconductor
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - 200MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-92 (TO-226) - NPN 600mV @ 5mA, 100mA 45 V
BC307BRL1G
BC307BRL1G
On Semiconductor
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - 280MHz - - Through Hole -55°C ~ 150°C (TJ) 350 mW - - TO-92 (TO-226) - PNP 250mV @ 5mA, 100mA 45 V
BC327-25RL1G
BC327-25RL1G
Download Datasheet for BC327-25RL1G
On Semiconductor
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 - - - - - - - - 800 mA 160 @ 100mA, 1V - - - 260MHz - - Through Hole -55°C ~ 150°C (TJ) 1.5 W - - TO-92 (TO-226) - PNP 700mV @ 50mA, 500mA 45 V
Showing 14351-14400 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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