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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
NTE291
NTE291
NTE Electronics
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 - - - - - - - - 4 A 15 @ 1.5A, 4V - - - 4MHz - - Through Hole -65°C ~ 150°C 1.8 W - - TO-220 - NPN 2.5V @ 2A, 4A 120 V
TTA1452B,S4X
TTA1452B,S4X
Toshiba
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 - - - - - - - - 12 A 120 @ 1A, 1V - - - 50MHz - - Through Hole 150°C (TJ) 2 W - - TO-220SIS - PNP 400mV @ 300mA, 6A 80 V
NTE192
NTE192
NTE Electronics
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 - - - - - - - - 500 mA 180 @ 2mA, 4.5V - - - - - - Through Hole 150°C (TJ) 560 mW - - TO-92HS - NPN 300mV @ 3mA, 50mA 50 V
NTE2343
NTE2343
NTE Electronics
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 - - - - - - - - 12 A 1000 @ 3A, 3V - - - - - - Through Hole 150°C (TJ) 80 W - - TO-220 - NPN - Darlington 3V @ 100mA, 10A 120 V
2N3773V
2N3773V
Harris Semiconductor
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2SB1400-E#0205
2SB1400-E#0205
Renesas
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2N1700
2N1700
Harris Semiconductor
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NTE193
NTE193
NTE Electronics
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 - - - - - - - - 500 mA 180 @ 2mA, 4.5V - - - - - - Through Hole 150°C (TJ) 560 mW - - TO-92HS - PNP 300mV @ 3mA, 50mA 50 V
BD750B
BD750B
Harris Semiconductor
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NTE398
NTE398
NTE Electronics
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 - - - - - - - - 2 A 60 @ 400mA, 10V - - - 5MHz - - Through Hole 150°C (TJ) 25 W - - TO-220 - PNP 1V @ 50mA, 500A 150 V
SJ83180
SJ83180
On Semiconductor
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2N2905A
2N2905A
NTE Electronics
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - - - - Through Hole - 600 mW - - TO-39 - PNP 1.6V @ 50mA, 500mA 40 V
NTE292
NTE292
NTE Electronics
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 - - - - - - - - 4 A 15 @ 1.5A, 4V - - - 4MHz - - Through Hole -65°C ~ 150°C 1.8 W - - TO-220 - PNP 2.5V @ 2A, 4A 120 V
UPA1476H-AZ
UPA1476H-AZ
Renesas
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2SC5681
2SC5681
On Semiconductor
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NTE31
NTE31
NTE Electronics
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 - - - - - - - - 1 A 100 @ 200mA, 5V - - - 100MHz - - Through Hole 150°C (TJ) 900 mW - - TO-92L - NPN 1.5V @ 50mA, 500mA 160 V
2N3440
2N3440
NTE Electronics
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 - - - - - - - - 1 A - - - - - - - Through Hole - - - - TO-39 - NPN - 250 V
2SB817C
2SB817C
On Semiconductor
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RJP63K2DPP-MZ#T2
RJP63K2DPP-MZ#T2
Renesas
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2N6043
2N6043
Harris Semiconductor
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 - - - - - - - - 8 A 1000 @ 4A, 4V - - - - - - Through Hole -65°C ~ 150°C (TJ) 75 W - - TO-220AB - NPN - Darlington 2V @ 16mA, 4A 60 V
2N5879
2N5879
Harris Semiconductor
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 - - - - - - - - 15 A - - - - 4MHz - - Through Hole 175°C (TJ) 160 W - - TO-3 - PNP - 60 V
BD751C
BD751C
Harris Semiconductor
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 - - - - - - - - 20 A 25 @ 5A, 2V - - - - - - Through Hole 200°C (TJ) 250 W - - TO-3 - NPN 1V @ 500mA, 5A 130 V
BD750C
BD750C
Harris Semiconductor
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TIP34B
TIP34B
NTE Electronics
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 - - - - - - - - 10 A 100 @ 3A, 4V - - - 3MHz - - Through Hole -65°C ~ 150°C (TJ) 80 W - - TO-218 - PNP - 80 V
NTE129
NTE129
NTE Electronics
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 - - - - - - - - 1 A 100 @ 100mA, 5V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1.25 W - - TO-39 - PNP 500mV @ 50mA, 500mA 80 V
TIP34C
TIP34C
NTE Electronics
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 - - - - - - - - 10 A 100 @ 3A, 4V - - - 3MHz - - Through Hole -65°C ~ 150°C (TJ) 80 W - - TO-218 - PNP - 100 V
2SD1126K-E
2SD1126K-E
Renesas
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D9360-T-AZ
D9360-T-AZ
Renesas
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NTE184
NTE184
NTE Electronics
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 - - - - - - - - 4 A 20 @ 1.5A, 2V - - - 2MHz - - Through Hole -65°C ~ 150°C (TJ) 40 W - - TO-126 - NPN 1.4V @ 1A, 4A 80 V
2SB1399-E
2SB1399-E
Renesas
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PP9348
PP9348
Microsemi Corporation
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NTE2638
NTE2638
NTE Electronics
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 - - - - - - - - 7 A 150 @ 2.5A, 5V - - - - - - Through Hole -65°C ~ 150°C (TJ) 2 W - - TO-220 - NPN - Darlington 2V @ 250mA, 5A 400 V
UPA1437H-AZ
UPA1437H-AZ
Renesas
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NTE227
NTE227
NTE Electronics
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 - - - - - - - - 100 mA 40 @ 10mA, 10V - - - 200MHz - - Through Hole 150°C (TJ) 850 mW - - TO-237 - NPN 1V @ 2mA, 20mA 300 V
TIP145
TIP145
NTE Electronics
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 - - - - - - - - 10 A 1000 @ 5A, 4V - - - - - - Through Hole -65°C ~ 150°C (TJ) 125 W - - TO-218 - PNP - 60 V
NTE289MP
NTE289MP
NTE Electronics
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 - - - - - - - - 800 mA 120 @ 50mA, 2V - - - 140MHz - - Through Hole 150°C (TJ) 600 mW - - TO-92 - NPN 800mV @ 20mA, 500mA 30 V
TIP146
TIP146
NTE Electronics
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 - - - - - - - - 10 A 1000 @ 5A, 4V - - - - - - Through Hole -65°C ~ 150°C (TJ) 125 W - - TO-218 - PNP - 80 V
2N6532
2N6532
Harris Semiconductor
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 - - - - - - - - 8 A 1000 @ 5A, 3V - - - - - - Through Hole -65°C ~ 150°C (TJ) 65 W - - TO-220-3 - NPN - Darlington 3V @ 80mA, 8A 100 V
NTE2679
NTE2679
NTE Electronics
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 - - - - - - - - 6 A 5 @ 3A, 5V - - - 3MHz - - Through Hole 150°C (TJ) 2 W - - TO-220 - NPN 2.5V @ 750mA, 3A 1500 V
UPA1453H-AZ
UPA1453H-AZ
Renesas
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TIP2955
TIP2955
NTE Electronics
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 - - - - - - - - 15 A 20 @ 4A, 4V - - - 3MHz - - Through Hole - 90 W - - TO-218 - PNP - 100 V
BDV64
BDV64
NTE Electronics
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 - - - - - - - - 12 A 1000 @ 5A, 4V - - - 60MHz - - Through Hole - 125 W - - TO-218 - PNP - 60 V
TIP151
TIP151
NTE Electronics
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 - - - - - - - - 10 A 150 @ 2.5A, 5V - - - - - - Through Hole -65°C ~ 150°C (TJ) 80 W - - TO-220 - NPN - Darlington 2V @ 250mA, 5A 350 V
BUX31B
BUX31B
Harris Semiconductor
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NTE264
NTE264
NTE Electronics
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 - - - - - - - - 10 A 1000 @ 5A, 3V - - - - - - Through Hole -65°C ~ 150°C (TJ) 2 W - - TO-220 - PNP - Darlington 3V @ 100mA, 10A 100 V
2SC5200-O(S1,F
2SC5200-O(S1,F
Download Datasheet for 2SC5200-O(S1,F
Toshiba
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 - - - - - - - - 15 A 55 @ 1A, 5V - - - 30MHz - - Through Hole 150°C (TJ) 150 W - - TO-3P(L) - NPN 3V @ 800mA, 8A 230 V
NTE128P
NTE128P
NTE Electronics
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 - - - - - - - - 1 A 100 @ 350mA, 2V - - - 50MHz - - Through Hole -55°C ~ 150°C (TJ) 850 mW - - TO-237 - NPN - 80 V
NTE2325
NTE2325
NTE Electronics
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 - - - - - - - - 3 A 10 @ 200mA, 5V - - - 15MHz - - Through Hole 150°C (TJ) 50 W - - TO-220 - NPN 2V @ 300mA, 1.5A 800 V
NTE159MCP
NTE159MCP
NTE Electronics
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 - - - - - - - - 800 mA 50 @ 10mA, 10V - - - 250MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - PNP 500mV @ 50mA, 500mA 80 V
MMBTA42Q
MMBTA42Q
Yangzhou Yangjie Electronic Technology Co.,Ltd
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Showing 14101-14150 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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