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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Current DC Current Gain (hFE) (Min) @ Ic, Vce Frequency Mounting Type Operating Temperature Power Supplier Device Package Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
KSC3502ES
KSC3502ES
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 100 mA 100 @ 10mA, 10V 150MHz Through Hole 150°C (TJ) 1.2 W TO-126-3 NPN 600mV @ 2mA, 20mA 200 V
KSC3502ESTU
KSC3502ESTU
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 100 mA 100 @ 10mA, 10V 150MHz Through Hole 150°C (TJ) 1.2 W TO-126-3 NPN 600mV @ 2mA, 20mA 200 V
KSC3953CS
KSC3953CS
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 200 mA 40 @ 10mA, 10V 400MHz Through Hole 150°C (TJ) 1.3 W TO-126-3 NPN 1V @ 3mA, 30mA 120 V
KSC3503DSTSSTU
KSC3503DSTSSTU
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 100 mA 60 @ 10mA, 10V 150MHz Through Hole -55°C ~ 150°C (TJ) 7 W TO-126-3 NPN 600mV @ 2mA, 20mA 300 V
KSC3953CSTU
KSC3953CSTU
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 200 mA 40 @ 10mA, 10V 400MHz Through Hole 150°C (TJ) 1.3 W TO-126-3 NPN 1V @ 3mA, 30mA 120 V
KSC2682OSTU
KSC2682OSTU
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 100 mA 100 @ 10mA, 5V 200MHz Through Hole 150°C (TJ) 1.2 W TO-126-3 NPN 500mV @ 5mA, 50mA 180 V
KSC3953DS
KSC3953DS
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 200 mA 60 @ 10mA, 10V 400MHz Through Hole 150°C (TJ) 1.3 W TO-126-3 NPN 1V @ 3mA, 30mA 120 V
KSC2682OS
KSC2682OS
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 100 mA 100 @ 10mA, 5V 200MHz Through Hole 150°C (TJ) 1.2 W TO-126-3 NPN 500mV @ 5mA, 50mA 180 V
KSC2682YSTU
KSC2682YSTU
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 100 mA 160 @ 10mA, 5V 200MHz Through Hole 150°C (TJ) 1.2 W TO-126-3 NPN 500mV @ 5mA, 50mA 180 V
KSC2258STU
KSC2258STU
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 100 mA 40 @ 40mA, 20V 100MHz Through Hole 150°C (TJ) 4 W TO-126-3 NPN 1.2V @ 5mA, 50mA 250 V
PZTA27
PZTA27
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 800 mA 10000 @ 100mA, 5V 125MHz Surface Mount -55°C ~ 150°C (TJ) 1 W SOT-223-4 NPN - Darlington 1.5V @ 100µA, 100mA 60 V
FPN430
FPN430
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 2 A 100 @ 100mA, 2V 100MHz Through Hole -55°C ~ 150°C (TJ) 1 W TO-226 PNP 500mV @ 100mA, 1A 30 V
PN3568
PN3568
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 1 A 40 @ 150mA, 1V - Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 NPN 250mV @ 15mA, 150mA 60 V
TN6728A
TN6728A
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 1.2 A 50 @ 250mA, 1V - Through Hole -55°C ~ 150°C (TJ) 1 W TO-226-3 PNP 500mV @ 10mA, 250mA 60 V
TN6716A
TN6716A
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 2 A 50 @ 250mA, 1V - Through Hole -55°C ~ 150°C (TJ) 1 W TO-226-3 NPN 500mV @ 10mA, 250mA 60 V
TN6715A
TN6715A
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 1.5 A 50 @ 1A, 1V - Through Hole -55°C ~ 150°C (TJ) 1 W TO-226-3 NPN 500mV @ 100mA, 1A 40 V
FPN330
FPN330
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 3 A 100 @ 100mA, 2V 100MHz Through Hole -55°C ~ 150°C (TJ) 1 W TO-226 NPN 500mV @ 100mA, 1A 30 V
KSE181STU
KSE181STU
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 3 A 50 @ 100mA, 1V 50MHz Through Hole - 1.5 W TO-126-3 NPN 1.7V @ 600mA, 3A 60 V
KSC2688OS
KSC2688OS
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 200 mA 60 @ 10mA, 10V 80MHz Through Hole 150°C (TJ) 1.25 W TO-126 NPN 1.5V @ 5mA, 50mA 300 V
KSC2688OSTU
KSC2688OSTU
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 200 mA 60 @ 10mA, 10V 80MHz Through Hole 150°C (TJ) 1.25 W TO-126 NPN 1.5V @ 5mA, 50mA 300 V
FPN330A
FPN330A
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 3 A 250 @ 100mA, 2V 100MHz Through Hole -55°C ~ 150°C (TJ) 1 W TO-226 NPN 450mV @ 100mA, 1A 30 V
KSC2688YSTSSTU
KSC2688YSTSSTU
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 200 mA 100 @ 10mA, 10V 80MHz Through Hole 150°C (TJ) 1.25 W TO-126 NPN 1.5V @ 5mA, 50mA 300 V
FJC1386RTF
FJC1386RTF
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 5 A 180 @ 500mA, 2V - Surface Mount 150°C (TJ) 500 mW SOT-89-3 PNP 1V @ 100mA, 4A 20 V
KSA1381ESTSSTU
KSA1381ESTSSTU
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 100 mA 100 @ 10mA, 10V 150MHz Through Hole -55°C ~ 150°C (TJ) 7 W TO-126-3 PNP 600mV @ 2mA, 20mA 300 V
KSA1381ES
KSA1381ES
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On Semiconductor
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 100 mA 100 @ 10mA, 10V 150MHz Through Hole -55°C ~ 150°C (TJ) 7 W TO-126-3 PNP 600mV @ 2mA, 20mA 300 V
KSB772YSTSSTU
KSB772YSTSSTU
Download Datasheet for KSB772YSTSSTU
On Semiconductor
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 3 A 160 @ 1A, 2V 80MHz Through Hole 150°C (TJ) 1 W TO-126-3 PNP 500mV @ 200mA, 2A 30 V
KSD882RS
KSD882RS
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 3 A 60 @ 1A, 2V 90MHz Through Hole -55°C ~ 150°C (TJ) 1 W TO-126-3 NPN 500mV @ 200mA, 2A 30 V
KSB772YSTSTU
KSB772YSTSTU
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 3 A 160 @ 1A, 2V 80MHz Through Hole 150°C (TJ) 1 W TO-126-3 PNP 500mV @ 200mA, 2A 30 V
KSA1142YSTU
KSA1142YSTU
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 100 mA 160 @ 10mA, 5V 180MHz Through Hole 150°C (TJ) 1.2 W TO-126-3 PNP 500mV @ 5mA, 50mA 180 V
TN6707A
TN6707A
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 1.2 A 40 @ 250mA, 2V 50MHz Through Hole -55°C ~ 150°C (TJ) 1 W TO-226-3 NPN 1V @ 100mA, 1A 80 V
KSD882YSTSTU
KSD882YSTSTU
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 3 A 160 @ 1A, 2V 90MHz Through Hole -55°C ~ 150°C (TJ) 1 W TO-126-3 NPN 500mV @ 200mA, 2A 30 V
KSD882OS
KSD882OS
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On Semiconductor
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 3 A 100 @ 1A, 2V 90MHz Through Hole -55°C ~ 150°C (TJ) 1 W TO-126-3 NPN 500mV @ 200mA, 2A 30 V
KSA1381ESTSTU
KSA1381ESTSTU
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 100 mA 100 @ 10mA, 10V 150MHz Through Hole -55°C ~ 150°C (TJ) 7 W TO-126-3 PNP 600mV @ 2mA, 20mA 300 V
KSD882YSTSSTU
KSD882YSTSSTU
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 3 A 160 @ 1A, 2V 90MHz Through Hole -55°C ~ 150°C (TJ) 1 W TO-126-3 NPN 500mV @ 200mA, 2A 30 V
FJN13003BU
FJN13003BU
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 1.5 A 9 @ 500mA, 2V 4MHz Through Hole 150°C (TJ) 1.1 W TO-92-3 NPN 3V @ 500mA, 1.5A 400 V
FPN430A
FPN430A
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 2 A 250 @ 100mA, 2V 100MHz Through Hole -55°C ~ 150°C (TJ) 1 W TO-226 PNP 450mV @ 100mA, 1A 30 V
KSD985OSTU
KSD985OSTU
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 1.5 A 4000 @ 1A, 2V - Through Hole 150°C (TJ) 1 W TO-126-3 NPN - Darlington 1.5V @ 1mA, 1A 60 V
KSC2752OS
KSC2752OS
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 500 mA 30 @ 50mA, 5V - Through Hole 150°C (TJ) 1 W TO-126-3 NPN 1V @ 60mA, 300mA 400 V
KSE340STU
KSE340STU
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 500 mA 30 @ 50mA, 10V - Through Hole 150°C (TJ) 20 W TO-126-3 NPN - 300 V
KSB744OSTU
KSB744OSTU
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 3 A 100 @ 500mA, 5V 45MHz Through Hole 150°C (TJ) 1 W TO-126-3 PNP 2V @ 150mA, 1.5A 45 V
KSC2690AYSTSTU
KSC2690AYSTSTU
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 1.2 A 160 @ 300mA, 5V 155MHz Through Hole 150°C (TJ) 1.2 W TO-126-3 NPN 700mV @ 200mA, 1A 160 V
KSC2690AOSTSTU
KSC2690AOSTSTU
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 1.2 A 100 @ 300mA, 5V 155MHz Through Hole 150°C (TJ) 1.2 W TO-126-3 NPN 700mV @ 200mA, 1A 160 V
KSE340S
KSE340S
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 500 mA 30 @ 50mA, 10V - Through Hole 150°C (TJ) 20 W TO-126-3 NPN - 300 V
KSC2690AOS
KSC2690AOS
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 1.2 A 100 @ 300mA, 5V 155MHz Through Hole 150°C (TJ) 1.2 W TO-126-3 NPN 700mV @ 200mA, 1A 160 V
KSA1220AOS
KSA1220AOS
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 1.2 A 100 @ 300mA, 5V 175MHz Through Hole 150°C (TJ) 1.2 W TO-126 PNP 700mV @ 200mA, 1A 160 V
KSE340STSTU
KSE340STSTU
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 500 mA 30 @ 50mA, 10V - Through Hole 150°C (TJ) 20 W TO-126-3 NPN - 300 V
KSE350S
KSE350S
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 500 mA 30 @ 50mA, 10V - Through Hole 150°C (TJ) 20 W TO-126-3 PNP - 300 V
ICA32V01X1SA1
ICA32V01X1SA1
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Infineon Technologies
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KSA1220AYSTSTU
KSA1220AYSTSTU
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 1.2 A 160 @ 300mA, 5V 175MHz Through Hole 150°C (TJ) 1.2 W TO-126 PNP 700mV @ 200mA, 1A 160 V
KSE13003H1AS
KSE13003H1AS
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 1.5 A 9 @ 500mA, 2V 4MHz Through Hole 150°C (TJ) 20 W TO-126-3 NPN 3V @ 500mA, 1.5A 400 V
Showing 14051-14100 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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