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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Current DC Current Gain (hFE) (Min) @ Ic, Vce Frequency Mounting Type Operating Temperature Power Supplier Device Package Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
BC807K-40VL
BC807K-40VL
Download Datasheet for BC807K-40VL
Nexperia USA Inc.
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 500 mA 250 @ 100mA, 1V 80MHz Surface Mount 150°C (TJ) 250 mW TO-236AB PNP 700mV @ 50mA, 500mA 45 V
2N7142
2N7142
Microchip Technology
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 12 A - - Through Hole -65°C ~ 200°C (TJ) 87 W TO-204AD (TO-3) PNP - 60 V
JANTX2N3584
JANTX2N3584
Microchip Technology
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 2 A 25 @ 1A, 10V - Through Hole -65°C ~ 200°C (TJ) 2.5 W TO-66 (TO-213AA) NPN 750mV @ 125mA, 1A 250 V
2SB1468R
2SB1468R
On Semiconductor
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BC817K-16HVL
BC817K-16HVL
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Nexperia USA Inc.
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 500 mA 100 @ 100mA, 1V 100MHz Surface Mount 150°C (TJ) 350 mW TO-236AB NPN 700mV @ 50mA, 500mA 45 V
JANS2N918UB/TR
JANS2N918UB/TR
Microchip Technology
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 50 mA 20 @ 3mA, 1V - Surface Mount -65°C ~ 200°C (TJ) 200 mW UB NPN 400mV @ 1mA, 10mA 15 V
BCX70G,215
BCX70G,215
Download Datasheet for BCX70G,215
Nexperia USA Inc.
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 100 mA 120 @ 2mA, 5V 250MHz Surface Mount 150°C (TJ) 250 mW TO-236AB NPN 550mV @ 1.25mA, 50mA 45 V
NXP3875YVL
NXP3875YVL
Download Datasheet for NXP3875YVL
Nexperia USA Inc.
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 150 mA 120 @ 2mA, 6V 80MHz Surface Mount 150°C (TJ) - TO-236AB NPN 250mV @ 10mA, 100mA 50 V
PMBT3906MB,315
PMBT3906MB,315
Download Datasheet for PMBT3906MB,315
Nexperia USA Inc.
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 200 mA 100 @ 10mA, 1V 250MHz Surface Mount 150°C (TJ) 250 mW DFN1006B-3 PNP 400mV @ 5mA, 50mA 40 V
JANS2N918UB
JANS2N918UB
Microchip Technology
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 50 mA 20 @ 3mA, 1V - Surface Mount -65°C ~ 200°C (TJ) 200 mW UB NPN 400mV @ 1mA, 10mA 15 V
JAN2N5666U3
JAN2N5666U3
Microchip Technology
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 5 A 40 @ 1A, 5V - Surface Mount -65°C ~ 200°C (TJ) 1.2 W U-3 (TO-276AA) NPN 1V @ 1A, 5A 200 V
BC857BQCZ
BC857BQCZ
Download Datasheet for BC857BQCZ
Nexperia USA Inc.
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 100 mA 220 @ 2mA, 5V 100MHz Surface Mount, Wettable Flank 150°C (TJ) 360 mW DFN1412D-3 PNP 850mV @ 5mA, 100mA 45 V
PN100RM
PN100RM
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On Semiconductor
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 500 mA 100 @ 150mA, 5V 250MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 NPN 400mV @ 20mA, 200mA 45 V
2SA608NG-NPA-AT
2SA608NG-NPA-AT
On Semiconductor
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 150 mA 280 @ 1mA, 6V 200MHz Through Hole 150°C (TJ) 500 mW TO-92 (TO-226) PNP 300mV @ 10mA, 100mA 50 V
DTC143TM3T5
DTC143TM3T5
On Semiconductor
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KSB1116AGBU
KSB1116AGBU
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On Semiconductor
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 1 A 200 @ 100mA, 2V 120MHz Through Hole 150°C (TJ) 750 mW TO-92-3 PNP 300mV @ 50mA, 1A 60 V
2N5400RA
2N5400RA
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On Semiconductor
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 600 mA 40 @ 10mA, 5V 400MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 500mV @ 5mA, 50mA 120 V
KSA643CYTA
KSA643CYTA
On Semiconductor
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 500 mA 120 @ 100mA, 1V - Through Hole 150°C (TJ) 500 mW TO-92-3 PNP 400mV @ 50mA, 500mA 20 V
2N4953
2N4953
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On Semiconductor
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 1 A 200 @ 150mA, 10V - Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 NPN 300mV @ 15mA, 150mA 30 V
PN2369
PN2369
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On Semiconductor
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 200 mA 40 @ 10mA, 1V - Through Hole -55°C ~ 150°C (TJ) 350 mW TO-92-3 NPN 250mV @ 1mA, 10mA 15 V
BC858C
BC858C
Infineon Technologies
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 100 mA 420 @ 2mA, 5V 150MHz Surface Mount 150°C (TJ) 310 mW SOT-23-3 PNP 650mV @ 5mA, 100mA 30 V
BCP52-16
BCP52-16
Infineon Technologies
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 1 A 100 @ 150mA, 2V 50MHz Surface Mount 150°C (TJ) 1.4 W SOT-223 PNP 500mV @ 50mA, 500mA 60 V
2N3859A
2N3859A
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On Semiconductor
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 500 mA 100 @ 1mA, 1V 250MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 NPN - 60 V
JANTXV2N5671
JANTXV2N5671
Microchip Technology
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 30 A 20 @ 20A, 5V - Through Hole -65°C ~ 200°C (TJ) 6 W TO-3 NPN 5V @ 6A, 30A 90 V
KSC2669OBU
KSC2669OBU
Download Datasheet for KSC2669OBU
On Semiconductor
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 30 mA 70 @ 2mA, 12V 250MHz Through Hole 150°C (TJ) 200 mW TO-92S NPN 400mV @ 1mA, 10mA 30 V
MPSL51
MPSL51
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On Semiconductor
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 200 mA 40 @ 50mA, 5V 60MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 300mV @ 5mA, 50mA 100 V
KSP45TF
KSP45TF
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On Semiconductor
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 300 mA 50 @ 10mA, 10V - Through Hole 150°C (TJ) 625 mW TO-92-3 NPN 750mV @ 5mA, 50mA 350 V
KSB1116SYBU
KSB1116SYBU
Download Datasheet for KSB1116SYBU
On Semiconductor
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 1 A 135 @ 100mA, 2V 120MHz Through Hole 150°C (TJ) 750 mW TO-92-3 PNP 300mV @ 50mA, 1A 50 V
BCW60A
BCW60A
Infineon Technologies
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 100 mA 120 @ 2mA, 5V 125MHz Surface Mount - 350 mW SOT-23-3 NPN 550mV @ 1.25mA, 50mA 32 V
BCW68G-ON
BCW68G-ON
On Semiconductor
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 800 mA 160 @ 100mA, 1V 100MHz Surface Mount -55°C ~ 150°C (TJ) 350 mW SOT-23-3 PNP 1.5V @ 30mA, 300mA 45 V
BCW60B
BCW60B
Infineon Technologies
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 100 mA 180 @ 2mA, 5V 125MHz Surface Mount - 350 mW SOT-23-3 NPN 550mV @ 1.25mA, 50mA 32 V
BC308
BC308
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On Semiconductor
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 100 mA 120 @ 2mA, 5V 130MHz Through Hole 150°C (TJ) 500 mW TO-92-3 PNP 500mV @ 5mA, 100mA 25 V
BC338
BC338
On Semiconductor
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 800 mA 100 @ 100mA, 1V 100MHz Through Hole 150°C (TJ) 625 mW TO-92-3 NPN 700mV @ 50mA, 500mA 25 V
BC182LB
BC182LB
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On Semiconductor
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 100 mA 40 @ 10µA, 5V 150MHz Through Hole -55°C ~ 150°C (TJ) 350 mW TO-92-3 NPN 600mV @ 5mA, 100mA 50 V
KSB1116AYTA
KSB1116AYTA
Download Datasheet for KSB1116AYTA
On Semiconductor
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 1 A 135 @ 100mA, 2V 120MHz Through Hole 150°C (TJ) 750 mW TO-92-3 PNP 300mV @ 50mA, 1A 60 V
KSC3265OMTF
KSC3265OMTF
Download Datasheet for KSC3265OMTF
On Semiconductor
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 800 mA 100 @ 100mA, 1V 120MHz Surface Mount 150°C (TJ) 200 mW SOT-23-3 NPN 400mV @ 20mA, 500mA 25 V
KSB1116AGTA
KSB1116AGTA
Download Datasheet for KSB1116AGTA
On Semiconductor
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 1 A 200 @ 100mA, 2V 120MHz Through Hole 150°C (TJ) 750 mW TO-92-3 PNP 300mV @ 50mA, 1A 60 V
FMBS549
FMBS549
Download Datasheet for FMBS549
On Semiconductor
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 1 A 100 @ 500mA, 2V 100MHz Surface Mount -55°C ~ 150°C (TJ) 700 mW SuperSOT™-6 PNP 750mV @ 200mA, 2A 30 V
2SC2812N6-CPA-TB-E
2SC2812N6-CPA-TB-E
Sanyo Denki
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 150 mA 200 @ 1mA, 6V 100MHz Surface Mount 150°C (TJ) 200 mW 3-CP NPN 500mV @ 5mA, 50mA 50 V
BCX71GE6327
BCX71GE6327
Infineon Technologies
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 100 mA 120 @ 2mA, 5V 250MHz Surface Mount 150°C (TJ) 330 mW PG-SOT23 PNP 550mV @ 1.25mA, 50mA 45 V
DTA143TXV3T1
DTA143TXV3T1
On Semiconductor
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BCX70JE6433
BCX70JE6433
Infineon Technologies
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 100 mA 250 @ 2mA, 5V 250MHz Surface Mount 150°C (TJ) 330 mW PG-SOT23 NPN 550mV @ 1.25mA, 50mA 45 V
BCX70HE6327
BCX70HE6327
Infineon Technologies
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 100 mA 180 @ 2mA, 5V 250MHz Surface Mount 150°C (TJ) 330 mW PG-SOT23 NPN 550mV @ 1.25mA, 50mA 45 V
BCX71HE6327
BCX71HE6327
Infineon Technologies
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 100 mA 180 @ 2mA, 5V 250MHz Surface Mount 150°C (TJ) 330 mW PG-SOT23 PNP 550mV @ 1.25mA, 50mA 45 V
BCX70JLT1
BCX70JLT1
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BCX70GE6327
BCX70GE6327
Infineon Technologies
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 100 mA 120 @ 2mA, 5V 250MHz Surface Mount 150°C (TJ) 330 mW PG-SOT23 NPN 550mV @ 1.25mA, 50mA 45 V
BCX71JE6327
BCX71JE6327
Infineon Technologies
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 100 mA 250 @ 2mA, 5V 250MHz Surface Mount 150°C (TJ) 330 mW PG-SOT23 PNP 550mV @ 1.25mA, 50mA 45 V
BC817K-25E6327
BC817K-25E6327
Infineon Technologies
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 500 mA 160 @ 100mA, 1V 170MHz Surface Mount 150°C (TJ) 500 mW PG-SOT23 - 700mV @ 50mA, 500mA 45 V
2SA1317S-AC
2SA1317S-AC
On Semiconductor
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EC3201C-PM-TL
EC3201C-PM-TL
On Semiconductor
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Showing 12651-12700 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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