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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
NJL4281DG
NJL4281DG
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 - - - - - - - - 15 A 80 @ 5A, 5V - - - 35MHz - - Through Hole -65°C ~ 150°C (TJ) 230 W - - TO-264 - NPN + Diode (Isolated) 1V @ 800mA, 8A 350 V
NJL4302DG
NJL4302DG
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 - - - - - - - - 15 A 80 @ 5A, 5V - - - 35MHz - - Through Hole -65°C ~ 150°C (TJ) 230 W - - TO-264 - PNP 1V @ 800mA, 8A 350 V
NJVBDX53C
NJVBDX53C
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 - - - - - - - - 8 A 750 @ 3A, 3V - - - - - - Through Hole - 65 W - - TO-220 - NPN - Darlington 2V @ 12mA, 3A 100 V
NSCT2222ALT1G
NSCT2222ALT1G
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 300MHz - - Surface Mount -55°C ~ 150°C (TJ) 225 mW - - SOT-23-3 (TO-236) - NPN 1V @ 50mA, 500mA 40 V
NSCT2222ALT3G
NSCT2222ALT3G
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 300MHz - - Surface Mount -55°C ~ 150°C (TJ) 225 mW - - SOT-23-3 (TO-236) - NPN 1V @ 50mA, 500mA 40 V
NSCT2907ALT1G
NSCT2907ALT1G
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 200MHz - - Surface Mount -55°C ~ 150°C (TJ) 225 mW - - SOT-23-3 (TO-236) - PNP 1.6V @ 50mA, 500mA 60 V
NSCT2907ALT3G
NSCT2907ALT3G
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 200MHz - - Surface Mount -55°C ~ 150°C (TJ) 225 mW - - SOT-23-3 (TO-236) - PNP 1.6V @ 50mA, 500mA 60 V
NSCT3904LT1G
NSCT3904LT1G
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 - - - - - - - - 200 mA 100 @ 10mA, 1V - - - 300MHz - - Surface Mount -55°C ~ 150°C (TJ) 225 mW - - SOT-23-3 (TO-236) - NPN 300mV @ 5mA, 50mA 40 V
NSCT3904LT3G
NSCT3904LT3G
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 - - - - - - - - 200 mA 100 @ 10mA, 1V - - - 300MHz - - Surface Mount -55°C ~ 150°C (TJ) 225 mW - - SOT-23-3 (TO-236) - NPN 300mV @ 5mA, 50mA 40 V
NSCT3906LT1G
NSCT3906LT1G
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 - - - - - - - - 200 mA 100 @ 10mA, 1V - - - 250MHz - - Surface Mount -55°C ~ 150°C (TJ) 225 mW - - SOT-23-3 (TO-236) - PNP 400mV @ 5mA, 50mA 40 V
NSCT3906LT3G
NSCT3906LT3G
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 - - - - - - - - 200 mA 100 @ 10mA, 1V - - - 250MHz - - Surface Mount -55°C ~ 150°C (TJ) 225 mW - - SOT-23-3 (TO-236) - PNP 400mV @ 5mA, 50mA 40 V
NSCT817-25LT1G
NSCT817-25LT1G
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 - - - - - - - - 500 mA 160 @ 100mA, 1V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 225 mW - - SOT-23-3 (TO-236) - NPN 700mV @ 50mA, 500mA 45 V
NSCT817-25LT3G
NSCT817-25LT3G
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 - - - - - - - - 500 mA 160 @ 100mA, 1V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 225 mW - - SOT-23-3 (TO-236) - NPN 700mV @ 50mA, 500mA 45 V
NSCT817-40LT1G
NSCT817-40LT1G
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 - - - - - - - - 100 mA 250 @ 100mA, 1V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 225 mW - - SOT-23-3 (TO-236) - NPN 700mV @ 50mA, 500mA 45 V
NSCT817-40LT3G
NSCT817-40LT3G
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 - - - - - - - - 100 mA 250 @ 100mA, 1V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 225 mW - - SOT-23-3 (TO-236) - NPN 700mV @ 50mA, 500mA 45 V
NST489AMT1
NST489AMT1
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 - - - - - - - - 2 A 300 @ 500mA, 5V - - - 300MHz - - Surface Mount -55°C ~ 150°C (TJ) 535 mW - - 6-TSOP - NPN 200mV @ 100mA, 1A 30 V
P2N2222ARL1
P2N2222ARL1
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 300MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - NPN 1V @ 50mA, 500mA 40 V
P2N2222ARL1G
P2N2222ARL1G
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 300MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - NPN 1V @ 50mA, 500mA 40 V
P2N2222AZL1
P2N2222AZL1
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 300MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - NPN 1V @ 50mA, 500mA 40 V
P2N2222AZL1G
P2N2222AZL1G
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 300MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - NPN 1V @ 50mA, 500mA 40 V
P2N2907A
P2N2907A
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 200MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - PNP 1.6V @ 50mA, 500mA 60 V
P2N2907AG
P2N2907AG
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 200MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - PNP 1.6V @ 50mA, 500mA 60 V
P2N2907ARL1
P2N2907ARL1
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 200MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - PNP 1.6V @ 50mA, 500mA 60 V
P2N2907ARL1G
P2N2907ARL1G
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 200MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - PNP 1.6V @ 50mA, 500mA 60 V
P2N2907AZL1
P2N2907AZL1
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 200MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - PNP 1.6V @ 50mA, 500mA 60 V
P2N2907AZL1G
P2N2907AZL1G
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 200MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - PNP 1.6V @ 50mA, 500mA 60 V
PN2222ARLRMG
PN2222ARLRMG
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 300MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - NPN 1V @ 50mA, 500mA 40 V
PN2222ARLRP
PN2222ARLRP
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 300MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - NPN 1V @ 50mA, 500mA 40 V
PN2222ARLRPG
PN2222ARLRPG
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 300MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - NPN 1V @ 50mA, 500mA 40 V
PZT2907AT3
PZT2907AT3
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 200MHz - - Surface Mount -65°C ~ 150°C (TJ) 1.5 W - - SOT-223 (TO-261) - PNP 1.6V @ 50mA, 500mA 60 V
TIP101
TIP101
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 - - - - - - - - 8 A 1000 @ 3A, 4V - - - - - - Through Hole -65°C ~ 150°C (TJ) 2 W - - TO-220 - NPN - Darlington 2.5V @ 80mA, 8A 80 V
TIP106G
TIP106G
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 - - - - - - - - 8 A 1000 @ 3A, 4V - - - - - - Through Hole -65°C ~ 150°C (TJ) 2 W - - TO-220 - PNP - Darlington 2.5V @ 80mA, 8A 80 V
TIP132G
TIP132G
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 - - - - - - - - 8 A 1000 @ 4A, 4V - - - - - - Through Hole -65°C ~ 150°C (TJ) 2 W - - TO-220 - NPN - Darlington 3V @ 30mA, 6A 100 V
2N5400
2N5400
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 - - - - - - - - 600 mA 40 @ 10mA, 5V - - - 400MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - PNP 500mV @ 5mA, 50mA 120 V
BC182
BC182
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 - - - - - - - - 100 mA 120 @ 2mA, 5V - - - 200MHz - - Through Hole -55°C ~ 150°C (TJ) 350 mW - - TO-92 (TO-226) - NPN 600mV @ 5mA, 100mA 50 V
BC548C
BC548C
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 - - - - - - - - 100 mA 420 @ 2mA, 5V - - - 300MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - NPN 250mV @ 500µA, 10mA 30 V
BC549C
BC549C
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - 250MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - NPN 600mV @ 5mA, 100mA 30 V
BC560C
BC560C
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 - - - - - - - - 100 mA 380 @ 2mA, 5V - - - 250MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 (TO-226) - PNP 250mV @ 5mA, 100mA 45 V
BD244B
BD244B
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 - - - - - - - - 6 A 15 @ 3A, 4V - - - 3MHz - - Through Hole -65°C ~ 150°C (TJ) 65 W - - TO-220 - PNP 1.5V @ 1A, 6A 80 V
BDX33B
BDX33B
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 - - - - - - - - 10 A 750 @ 3A, 3V - - - - - - Through Hole -65°C ~ 150°C (TJ) 70 W - - TO-220 - NPN - Darlington 2.5V @ 6mA, 3A 80 V
BC 807-25 E6327
BC 807-25 E6327
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Infineon Technologies
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 - - - - - - - - 500 mA 160 @ 100mA, 1V - - - 200MHz - - Surface Mount 150°C (TJ) 330 mW - - PG-SOT23 - PNP 700mV @ 50mA, 500mA 45 V
BC 807-40 E6327
BC 807-40 E6327
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Infineon Technologies
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 - - - - - - - - 500 mA 250 @ 100mA, 1V - - - 200MHz - - Surface Mount 150°C (TJ) 330 mW - - PG-SOT23 - PNP 700mV @ 50mA, 500mA 45 V
BC 817-16 E6327
BC 817-16 E6327
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Infineon Technologies
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 - - - - - - - - 500 mA 100 @ 100mA, 1V - - - 170MHz - - Surface Mount 150°C (TJ) 330 mW - - PG-SOT23 - NPN 700mV @ 50mA, 500mA 45 V
2SB764E-SSH
2SB764E-SSH
Sanyo Denki
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BC 817-25 E6327
BC 817-25 E6327
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Infineon Technologies
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 - - - - - - - - 500 mA 160 @ 100mA, 1V - - - 170MHz - - Surface Mount 150°C (TJ) 330 mW - - PG-SOT23 - NPN 700mV @ 50mA, 500mA 45 V
BC 817-40 E6327
BC 817-40 E6327
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Infineon Technologies
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 - - - - - - - - 500 mA 250 @ 100mA, 1V - - - 170MHz - - Surface Mount 150°C (TJ) 330 mW - - PG-SOT23 - NPN 700mV @ 50mA, 500mA 45 V
BC 846B E6327
BC 846B E6327
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Infineon Technologies
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - 250MHz - - Surface Mount 150°C (TJ) 330 mW - - PG-SOT23 - NPN 600mV @ 5mA, 100mA 65 V
BC 856B E6327
BC 856B E6327
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Infineon Technologies
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 - - - - - - - - 100 mA 220 @ 2mA, 5V - - - 250MHz - - Surface Mount 150°C (TJ) 330 mW - - PG-SOT23 - PNP 650mV @ 5mA, 100mA 65 V
BCP 54-16 E6327
BCP 54-16 E6327
Download Datasheet for BCP 54-16 E6327
Infineon Technologies
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 - - - - - - - - 1 A 100 @ 150mA, 2V - - - 100MHz - - Surface Mount 150°C (TJ) 2 W - - PG-SOT223-4 - NPN 500mV @ 50mA, 500mA 45 V
BCX 54-16 E6327
BCX 54-16 E6327
Download Datasheet for BCX 54-16 E6327
Infineon Technologies
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 - - - - - - - - 1 A 100 @ 150mA, 2V - - - 100MHz - - Surface Mount 150°C (TJ) 2 W - - PG-SOT89 - NPN 500mV @ 50mA, 500mA 45 V
Showing 12551-12600 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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