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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Current DC Current Gain (hFE) (Min) @ Ic, Vce Frequency Mounting Type Operating Temperature Power Supplier Device Package Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
2N4033UB
2N4033UB
Download Datasheet for 2N4033UB
Microchip Technology
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 1 A 100 @ 100mA, 5V - Surface Mount -65°C ~ 200°C (TJ) 500 mW UB PNP 1V @ 100mA, 1A 80 V
2N4261
2N4261
Microchip Technology
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 30 mA 30 @ 10mA, 1V - Through Hole -65°C ~ 200°C (TJ) 200 mW TO-72 PNP 350mV @ 1mA, 10mA 15 V
JAN2N4261
JAN2N4261
Microchip Technology
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 30 mA 30 @ 10mA, 1V - Through Hole -65°C ~ 200°C (TJ) 200 mW TO-72 PNP 350mV @ 1mA, 10mA 15 V
JANTXV2N4261
JANTXV2N4261
Microchip Technology
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 30 mA 30 @ 10mA, 1V - Through Hole -65°C ~ 200°C (TJ) 200 mW TO-72 PNP 350mV @ 1mA, 10mA 15 V
2N4261UB
2N4261UB
Microchip Technology
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 30 mA 30 @ 10mA, 1V - Surface Mount -65°C ~ 200°C (TJ) 200 mW UB PNP 350mV @ 1mA, 10mA 15 V
JAN2N4261UB
JAN2N4261UB
Microchip Technology
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 30 mA 30 @ 10mA, 1V - Surface Mount -65°C ~ 200°C (TJ) 200 mW UB PNP 350mV @ 1mA, 10mA 15 V
JANTX2N4261UB
JANTX2N4261UB
Microchip Technology
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 30 mA 30 @ 10mA, 1V - Surface Mount -65°C ~ 200°C (TJ) 200 mW UB PNP 350mV @ 1mA, 10mA 15 V
JANTXV2N4261UB
JANTXV2N4261UB
Microchip Technology
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 30 mA 30 @ 10mA, 1V - Surface Mount -65°C ~ 200°C (TJ) 200 mW UB PNP 350mV @ 1mA, 10mA 15 V
JANTX2N5004
JANTX2N5004
Microchip Technology
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 5 A 70 @ 2.5A, 5V - Chassis, Stud Mount -65°C ~ 200°C (TJ) 2 W TO-59 NPN 1.5V @ 500mA, 5A 80 V
JAN2N5153
JAN2N5153
Microchip Technology
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 2 A 70 @ 2.5A, 5V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-39 (TO-205AD) PNP 1.5V @ 500mA, 5A 80 V
JAN2N5154
JAN2N5154
Microchip Technology
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 2 A 70 @ 2.5A, 5V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-39 (TO-205AD) NPN 1.5V @ 500mA, 5A 80 V
JANTXV2N5154
JANTXV2N5154
Microchip Technology
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 2 A 70 @ 2.5A, 5V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-39 (TO-205AD) NPN 1.5V @ 500mA, 5A 80 V
JANTXV2N5154L
JANTXV2N5154L
Microchip Technology
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 2 A 70 @ 2.5A, 5V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-5 NPN 1.5V @ 500mA, 5A 80 V
JANTXV2N5237
JANTXV2N5237
Microchip Technology
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 10 A 40 @ 5A, 5V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-5 NPN 2.5V @ 1A, 10A 120 V
JAN2N5415
JAN2N5415
Microchip Technology
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 1 A 30 @ 50mA, 10V - Through Hole -65°C ~ 200°C (TJ) 750 mW TO-5 PNP 2V @ 5mA, 50mA 200 V
JAN2N5416
JAN2N5416
Microchip Technology
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 1 A 30 @ 50mA, 10V - Through Hole -65°C ~ 200°C (TJ) 750 mW TO-5 PNP 2V @ 5mA, 50mA 300 V
JAN2N5416S
JAN2N5416S
Microchip Technology
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 1 A 30 @ 50mA, 10V - Through Hole -65°C ~ 200°C (TJ) 750 mW TO-39 (TO-205AD) PNP 2V @ 5mA, 50mA 300 V
JANTXV2N5416S
JANTXV2N5416S
Microchip Technology
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 1 A 30 @ 50mA, 10V - Through Hole -65°C ~ 200°C (TJ) 750 mW TO-39 (TO-205AD) PNP 2V @ 5mA, 50mA 300 V
JANTXV2N5664
JANTXV2N5664
Download Datasheet for JANTXV2N5664
Microchip Technology
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 5 A 40 @ 1A, 5V - Through Hole -65°C ~ 200°C (TJ) 2.5 W TO-66 (TO-213AA) NPN 1V @ 1A, 5A 200 V
JAN2N5666S
JAN2N5666S
Download Datasheet for JAN2N5666S
Microchip Technology
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 5 A 40 @ 1A, 5V - Through Hole -65°C ~ 200°C (TJ) 1.2 W TO-39 (TO-205AD) NPN 1V @ 1A, 5A 200 V
JANTX2N5666S
JANTX2N5666S
Download Datasheet for JANTX2N5666S
Microchip Technology
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 5 A 40 @ 1A, 5V - Through Hole -65°C ~ 200°C (TJ) 1.2 W TO-39 (TO-205AD) NPN 1V @ 1A, 5A 200 V
JAN2N5667S
JAN2N5667S
Download Datasheet for JAN2N5667S
Microchip Technology
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 5 A 25 @ 1A, 5V - Through Hole -65°C ~ 200°C (TJ) 1.2 W TO-39 (TO-205AD) NPN 1V @ 1A, 5A 300 V
JANTX2N5667S
JANTX2N5667S
Download Datasheet for JANTX2N5667S
Microchip Technology
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 5 A 25 @ 1A, 5V - Through Hole -65°C ~ 200°C (TJ) 1.2 W TO-39 (TO-205AD) NPN 1V @ 1A, 5A 300 V
JANTXV2N5667S
JANTXV2N5667S
Download Datasheet for JANTXV2N5667S
Microchip Technology
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 5 A 25 @ 1A, 5V - Through Hole -65°C ~ 200°C (TJ) 1.2 W TO-39 (TO-205AD) NPN 1V @ 1A, 5A 300 V
JANTXV2N5680
JANTXV2N5680
Microchip Technology
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 1 A 40 @ 250mA, 2V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-39 (TO-205AD) PNP 1V @ 50mA, 500mA 120 V
JAN2N6051
JAN2N6051
Microchip Technology
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 12 A 1000 @ 6A, 3V - Through Hole -55°C ~ 175°C (TJ) 150 W TO-3 (TO-204AA) PNP - Darlington 3V @ 120mA, 12A 80 V
JAN2N6193
JAN2N6193
Microchip Technology
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 5 A 60 @ 2A, 2V - Through Hole -65°C ~ 200°C (TJ) 1 W TO-39 (TO-205AD) PNP 1.2V @ 500mA, 5A 100 V
JAN2N6249
JAN2N6249
Microsemi Corporation
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 10 A 10 @ 10A, 3V - Through Hole -65°C ~ 200°C (TJ) 6 W TO-3 (TO-204AA) NPN 1.5V @ 1A, 10A 200 V
JANTX2N6249
JANTX2N6249
Microsemi Corporation
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 10 A 10 @ 10A, 3V - Through Hole -65°C ~ 200°C (TJ) 6 W TO-3 (TO-204AA) NPN 1.5V @ 1A, 10A 200 V
JANTXV2N6249
JANTXV2N6249
Microsemi Corporation
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 10 A 10 @ 10A, 3V - Through Hole -65°C ~ 200°C (TJ) 6 W TO-3 (TO-204AA) NPN 1.5V @ 1A, 10A 200 V
JAN2N6250
JAN2N6250
Microsemi Corporation
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 10 A 8 @ 10A, 3V - Through Hole -65°C ~ 200°C (TJ) 6 W TO-3 (TO-204AA) NPN 1.5V @ 1.25A, 10A 275 V
JANTXV2N6250
JANTXV2N6250
Microsemi Corporation
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 10 A 8 @ 10A, 3V - Through Hole -65°C ~ 200°C (TJ) 6 W TO-3 (TO-204AA) NPN 1.5V @ 1.25A, 10A 275 V
JAN2N6251
JAN2N6251
Microchip Technology
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 10 A 6 @ 10A, 3V - Through Hole -65°C ~ 200°C (TJ) 5.5 W TO-3 (TO-204AA) NPN 1.5V @ 1.67A, 10A 350 V
JANTX2N6306
JANTX2N6306
Microchip Technology
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 8 A 15 @ 3A, 5V - Through Hole -65°C ~ 200°C (TJ) 125 W TO-204AA (TO-3) NPN 5V @ 2A, 8A 250 V
JAN2N6385
JAN2N6385
Microchip Technology
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 10 A 1000 @ 5A, 3V - Through Hole -55°C ~ 175°C (TJ) 6 W TO-204AA (TO-3) NPN - Darlington 3V @ 100mA, 10A 80 V
JAN2N6546
JAN2N6546
Microchip Technology
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 15 A 12 @ 5A, 2V - Through Hole -65°C ~ 200°C (TJ) 175 W TO-204AA (TO-3) NPN 5V @ 3A, 15A 300 V
JANTX2N6546
JANTX2N6546
Microchip Technology
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 15 A 12 @ 5A, 2V - Through Hole -65°C ~ 200°C (TJ) 175 W TO-204AA (TO-3) NPN 5V @ 3A, 15A 300 V
JANTXV2N6546
JANTXV2N6546
Microchip Technology
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 15 A 12 @ 5A, 2V - Through Hole -65°C ~ 200°C (TJ) 175 W TO-204AA (TO-3) NPN 5V @ 3A, 15A 300 V
JANTXV2N6547
JANTXV2N6547
Microchip Technology
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 15 A 12 @ 5A, 2V - Through Hole -65°C ~ 200°C (TJ) 175 W TO-204AA (TO-3) NPN 5V @ 3A, 15A 400 V
2SC3624-T1B-A
2SC3624-T1B-A
Renesas
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 150 mA 1000 @ 1mA, 5V 250MHz Surface Mount 150°C (TJ) 200 mW SC-59 NPN 300mV @ 5mA, 50mA 50 V
APT17NTR-G1
APT17NTR-G1
Diodes Incorporated
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 50 mA 20 @ 10mA, 20V - Surface Mount -55°C ~ 150°C (TJ) 200 mW SOT-23-3 NPN - 480 V
CP127-2N6301-CT
CP127-2N6301-CT
Download Datasheet for CP127-2N6301-CT
Central Semiconductor Corp
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 8 A 750 @ 4A, 3V 4MHz Surface Mount -65°C ~ 200°C (TJ) - Die NPN - Darlington 3V @ 80mA, 8A 80 V
CP191V-2N2222A-CT
CP191V-2N2222A-CT
Download Datasheet for CP191V-2N2222A-CT
Central Semiconductor Corp
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 800 mA 100 @ 150mA, 10V 300MHz Surface Mount -65°C ~ 150°C (TJ) - Die NPN 1V @ 50mA, 500mA 40 V
CP305-2N3019-CT
CP305-2N3019-CT
Download Datasheet for CP305-2N3019-CT
Central Semiconductor Corp
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 1 A 100 @ 150mA, 10V 100MHz Surface Mount -65°C ~ 150°C (TJ) - Die NPN 500mV @ 50mA, 500mA 80 V
CP310-MPSA42-CT
CP310-MPSA42-CT
Download Datasheet for CP310-MPSA42-CT
Central Semiconductor Corp
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 500 mA 40 @ 30mA, 10V - Surface Mount -65°C ~ 150°C (TJ) - Die NPN 500mV @ 2mA, 20mA 300 V
PBSS5240ZX
PBSS5240ZX
NXP Semiconductors
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 2 A 300 @ 1mA, 5V 150MHz Surface Mount 150°C (TJ) 650 mW SOT-223 PNP 650mV @ 200mA, 2A 40 V
CP336V-2N5551-CT
CP336V-2N5551-CT
Download Datasheet for CP336V-2N5551-CT
Central Semiconductor Corp
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 600 mA 80 @ 10mA, 5V 300MHz Surface Mount -65°C ~ 150°C (TJ) - Die NPN 200mV @ 5mA, 50mA 160 V
2N5401
2N5401
Solid State Devices Inc (SSDI)
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 - - - Through Hole - - TO-92 PNP - -
PBSS5612PA,115
PBSS5612PA,115
NXP Semiconductors
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 6 A 190 @ 2A, 2V 60MHz Surface Mount 150°C (TJ) 2.1 W 3-HUSON (2x2) PNP 300mV @ 300mA, 6A 12 V
PBSS304PD,115
PBSS304PD,115
Download Datasheet for PBSS304PD,115
NXP Semiconductors
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 1 A 155 @ 500mA, 2V 110MHz Surface Mount 150°C (TJ) 1.1 W 6-TSOP PNP 540mV @ 500mA, 5A 80 V
Showing 10901-10950 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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