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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Current DC Current Gain (hFE) (Min) @ Ic, Vce Frequency Mounting Type Operating Temperature Power Supplier Device Package Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
KSD227YBU
KSD227YBU
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 300 mA 120 @ 50mA, 1V - Through Hole 150°C (TJ) 400 mW TO-92-3 NPN 400mV @ 30mA, 300mA 25 V
KSC838CYTA
KSC838CYTA
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 30 mA 120 @ 2mA, 12V 250MHz Through Hole 150°C (TJ) 250 mW TO-92-3 NPN 400mV @ 1mA, 10mA 30 V
2N3905TFR
2N3905TFR
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 200 mA 50 @ 10mA, 1V - Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 400mV @ 5mA, 50mA 40 V
KSC1675RBU
KSC1675RBU
On Semiconductor
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 50 mA 40 @ 1mA, 6V 300MHz Through Hole - 250 mW TO-92-3 NPN 300mV @ 1mA, 10mA 30 V
KSA1175YBU
KSA1175YBU
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 150 mA 120 @ 1mA, 6V 180MHz Through Hole 150°C (TJ) 250 mW TO-92S PNP 300mV @ 10mA, 100mA 50 V
KSC900GTA
KSC900GTA
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 50 mA 200 @ 500µA, 3V 100MHz Through Hole 150°C (TJ) 250 mW TO-92-3 NPN 200mV @ 2mA, 20mA 25 V
KST24MTF
KST24MTF
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 100 mA 30 @ 8mA, 10V 620MHz Surface Mount - 350 mW SOT-23-3 NPN - 30 V
KSC900LTA
KSC900LTA
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 50 mA 350 @ 500µA, 3V 100MHz Through Hole 150°C (TJ) 250 mW TO-92-3 NPN 200mV @ 2mA, 20mA 25 V
2N4402TFR
2N4402TFR
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 600 mA 50 @ 150mA, 2V - Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 750mV @ 50mA, 500mA 40 V
2N3903
2N3903
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 200 mA 50 @ 10mA, 1V - Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 NPN 300mV @ 5mA, 50mA 40 V
SS9015BTA
SS9015BTA
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 100 mA 100 @ 1mA, 5V 190MHz Through Hole 150°C (TJ) 450 mW TO-92-3 PNP 700mV @ 5mA, 100mA 45 V
KSB564ACYBU
KSB564ACYBU
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 1 A 120 @ 100mA, 1V 110MHz Through Hole 150°C (TJ) 800 mW TO-92-3 PNP 500mV @ 100mA, 1A 25 V
SS9013GTA
SS9013GTA
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 500 mA 112 @ 50mA, 1V - Through Hole 150°C (TJ) 625 mW TO-92-3 NPN 600mV @ 50mA, 500mA 20 V
SS9011FBU
SS9011FBU
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 30 mA 54 @ 1mA, 5V 2MHz Through Hole 150°C (TJ) 400 mW TO-92-3 NPN 300mV @ 1mA, 10mA 30 V
SS9013HBU
SS9013HBU
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 500 mA 144 @ 50mA, 1V - Through Hole 150°C (TJ) 625 mW TO-92-3 NPN 600mV @ 50mA, 500mA 20 V
2N4400TF
2N4400TF
On Semiconductor
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 600 mA 50 @ 150mA, 1V - Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 NPN 750mV @ 50mA, 500mA 40 V
2N5550BU
2N5550BU
On Semiconductor
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 600 mA 60 @ 10mA, 5V 300MHz Through Hole 150°C (TJ) 625 mW TO-92-3 NPN 250mV @ 5mA, 50mA 140 V
KSB564ACGTA
KSB564ACGTA
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 1 A 200 @ 100mA, 1V 110MHz Through Hole 150°C (TJ) 800 mW TO-92-3 PNP 500mV @ 100mA, 1A 25 V
KSP8099TF
KSP8099TF
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 500 mA 100 @ 1mA, 5V 150MHz Through Hole 150°C (TJ) 625 mW TO-92-3 NPN 300mV @ 10mA, 100mA 80 V
KSC2785YTA
KSC2785YTA
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 150 mA 120 @ 1mA, 6V 300MHz Through Hole 150°C (TJ) 250 mW TO-92S NPN 300mV @ 10mA, 100mA 50 V
KSC1623OMTF
KSC1623OMTF
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 100 mA 90 @ 1mA, 6V 250MHz Surface Mount 150°C (TJ) 200 mW SOT-23-3 NPN 300mV @ 10mA, 100mA 50 V
BC807-16/6215
BC807-16/6215
NXP Semiconductors
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BC548CTAR
BC548CTAR
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 100 mA 420 @ 2mA, 5V 300MHz Through Hole 150°C (TJ) 500 mW TO-92-3 NPN 600mV @ 5mA, 100mA 30 V
BC817-16
BC817-16
Infineon Technologies
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 800 mA 100 @ 100mA, 1V 100MHz Surface Mount -65°C ~ 150°C (TJ) 310 mW SOT23-3 (TO-236) NPN 700mV @ 50mA, 500mA 45 V
BC548BBU
BC548BBU
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 100 mA 200 @ 2mA, 5V 300MHz Through Hole 150°C (TJ) 500 mW TO-92-3 NPN 600mV @ 5mA, 100mA 30 V
BC558CTA
BC558CTA
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 100 mA 420 @ 2mA, 5V 150MHz Through Hole 150°C (TJ) 500 mW TO-92-3 PNP 650mV @ 5mA, 100mA 30 V
BC238CBU
BC238CBU
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 100 mA 380 @ 2mA, 5V 250MHz Through Hole 150°C (TJ) 500 mW TO-92-3 NPN 600mV @ 5mA, 100mA 25 V
BC556BBU
BC556BBU
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 100 mA 200 @ 2mA, 5V 150MHz Through Hole 150°C (TJ) 500 mW TO-92-3 PNP 650mV @ 5mA, 100mA 65 V
BC548ATA
BC548ATA
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 100 mA 110 @ 2mA, 5V 300MHz Through Hole 150°C (TJ) 500 mW TO-92-3 NPN 600mV @ 5mA, 100mA 30 V
BC548CBU
BC548CBU
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 100 mA 420 @ 2mA, 5V 300MHz Through Hole 150°C (TJ) 500 mW TO-92-3 NPN 600mV @ 5mA, 100mA 30 V
BC32840TA
BC32840TA
On Semiconductor
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 800 mA 250 @ 100mA, 1V 100MHz Through Hole 150°C (TJ) 625 mW TO-92-3 PNP 700mV @ 50mA, 500mA 25 V
BCX799
BCX799
On Semiconductor
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 500 mA 80 @ 10mA, 1V - Through Hole - 625 mW TO-92-3 PNP 600mV @ 2.5mA, 100mA 45 V
BC549CBU
BC549CBU
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 100 mA 420 @ 2mA, 5V 300MHz Through Hole 150°C (TJ) 500 mW TO-92-3 NPN 600mV @ 5mA, 100mA 30 V
BC337TF
BC337TF
On Semiconductor
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 800 mA 100 @ 100mA, 1V 100MHz Through Hole 150°C (TJ) 625 mW TO-92-3 NPN 700mV @ 50mA, 500mA 45 V
BCW31
BCW31
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 500 mA 110 @ 2mA, 5V 200MHz Surface Mount -55°C ~ 150°C (TJ) 350 mW SOT-23-3 NPN 250mV @ 500µA, 10mA 32 V
KSA642YBU
KSA642YBU
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 300 mA 120 @ 50mA, 1V - Through Hole 150°C (TJ) 400 mW TO-92-3 PNP 600mV @ 30mA, 300mA 25 V
KSA642YTA
KSA642YTA
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 300 mA 120 @ 50mA, 1V - Through Hole 150°C (TJ) 400 mW TO-92-3 PNP 600mV @ 30mA, 300mA 25 V
SS9013FBU
SS9013FBU
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 500 mA 78 @ 50mA, 1V - Through Hole 150°C (TJ) 625 mW TO-92-3 NPN 600mV @ 50mA, 500mA 20 V
2N4124TF
2N4124TF
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 200 mA 120 @ 2mA, 1V 300MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 NPN 300mV @ 5mA, 50mA 25 V
2N5550TF
2N5550TF
On Semiconductor
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 600 mA 60 @ 10mA, 5V 300MHz Through Hole 150°C (TJ) 625 mW TO-92-3 NPN 250mV @ 5mA, 50mA 140 V
2N3905TF
2N3905TF
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 200 mA 50 @ 10mA, 1V - Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 PNP 400mV @ 5mA, 50mA 40 V
KSB811YTA
KSB811YTA
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 1 A 120 @ 100mA, 1V 110MHz Through Hole 150°C (TJ) 350 mW TO-92S PNP 500mV @ 100mA, 1A 25 V
KSP8098TA
KSP8098TA
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 500 mA 100 @ 1mA, 5V 150MHz Through Hole 150°C (TJ) 625 mW TO-92-3 NPN 300mV @ 10mA, 100mA 60 V
2N5210TF
2N5210TF
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 100 mA 200 @ 100µA, 5V 30MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 NPN 700mV @ 1mA, 10mA 50 V
DTA143Z
DTA143Z
On Semiconductor
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2N6076
2N6076
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 500 mA 100 @ 10mA, 1V - Through Hole 150°C (TJ) 625 mW TO-92-3 PNP 250mV @ 1mA, 10mA 25 V
KSC945LTA
KSC945LTA
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 150 mA 350 @ 1mA, 6V 300MHz Through Hole 150°C (TJ) 250 mW TO-92-3 NPN 300mV @ 10mA, 100mA 50 V
KSP8599CTA
KSP8599CTA
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 500 mA 100 @ 1mA, 5V 150MHz Through Hole 150°C (TJ) 625 mW TO-92-3 PNP 400mV @ 5mA, 100mA 80 V
MPSH24
MPSH24
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 50 mA 30 @ 8mA, 10V 400MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92-3 NPN - 30 V
KSD471AGBU
KSD471AGBU
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 1 A 200 @ 100mA, 1V 130MHz Through Hole 150°C (TJ) 800 mW TO-92-3 NPN 500mV @ 100mA, 1A 30 V
Showing 10851-10900 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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