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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
2SC5343-Y-AP
2SC5343-Y-AP
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 - - - - - - - - 150 mA 120 @ 2A, 6V - - - 80MHz - - Through Hole 150°C (TJ) 625 mW - - TO-92 - NPN 250mV @ 10mA, 100mA 50 V
2SC945-GR-AP
2SC945-GR-AP
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 - - - - - - - - 150 mA 200 @ 1mA, 6V - - - 150MHz - - Through Hole -55°C ~ 150°C (TJ) 400 mW - - TO-92 - NPN 300mV @ 10mA, 100mA 50 V
2SC945-Y-AP
2SC945-Y-AP
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 - - - - - - - - 150 mA 120 @ 1mA, 6V - - - 150MHz - - Through Hole -55°C ~ 150°C (TJ) 400 mW - - TO-92 - NPN 300mV @ 10mA, 100mA 50 V
2SD468-B-AP
2SD468-B-AP
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 - - - - - - - - 1 A 85 @ 500mA, 2V - - - 190MHz - - Through Hole -55°C ~ 150°C (TJ) 900 mW - - TO-92 - NPN 500mV @ 80mA, 800mA 20 V
2SD468-C-AP
2SD468-C-AP
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 - - - - - - - - 1 A 120 @ 500mA, 2V - - - 190MHz - - Through Hole -55°C ~ 150°C (TJ) 900 mW - - TO-92 - NPN 500mV @ 80mA, 800mA 20 V
2SD667A-B-AP
2SD667A-B-AP
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 - - - - - - - - 1 A 60 @ 150mA, 5V - - - 140MHz - - Through Hole -55°C ~ 150°C (TJ) 900 mW - - TO-92MOD - NPN 1V @ 50mA, 500mA 100 V
2SD667A-C-AP
2SD667A-C-AP
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 - - - - - - - - 1 A 100 @ 150mA, 5V - - - 140MHz - - Through Hole -55°C ~ 150°C (TJ) 900 mW - - TO-92MOD - NPN 1V @ 50mA, 500mA 100 V
2SD667-B-AP
2SD667-B-AP
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 - - - - - - - - 1 A 60 @ 150mA, 5V - - - 140MHz - - Through Hole -55°C ~ 150°C (TJ) 900 mW - - TO-92MOD - NPN 1V @ 50mA, 500mA 80 V
2SD667-C-AP
2SD667-C-AP
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 - - - - - - - - 1 A 100 @ 150mA, 5V - - - 140MHz - - Through Hole -55°C ~ 150°C (TJ) 900 mW - - TO-92MOD - NPN 1V @ 50mA, 500mA 80 V
2SD667L-B-AP
2SD667L-B-AP
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 - - - - - - - - 1 A 60 @ 150mA, 5V - - - 140MHz - - Through Hole -55°C ~ 150°C (TJ) 900 mW - - TO-92 - NPN 1V @ 50mA, 500mA 80 V
2SD667L-C-AP
2SD667L-C-AP
Download Datasheet for 2SD667L-C-AP
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 - - - - - - - - 1 A 100 @ 150mA, 5V - - - 140MHz - - Through Hole -55°C ~ 150°C (TJ) 900 mW - - TO-92 - NPN 1V @ 50mA, 500mA 80 V
BC237A-AP
BC237A-AP
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 - - - - - - - - 100 mA 120 @ 2mA, 5V - - - 200MHz - - Through Hole 150°C (TJ) 350 mW - - TO-92 - NPN 600mV @ 5mA, 100mA 45 V
BC237B-AP
BC237B-AP
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - 200MHz - - Through Hole 150°C (TJ) 350 mW - - TO-92 - NPN 600mV @ 5mA, 100mA 45 V
BC237C-AP
BC237C-AP
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 - - - - - - - - 100 mA 380 @ 2mA, 5V - - - 200MHz - - Through Hole 150°C (TJ) 350 mW - - TO-92 - NPN 600mV @ 5mA, 100mA 45 V
BC328-16-AP
BC328-16-AP
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 - - - - - - - - 800 mA 100 @ 100mA, 1V - - - 260MHz - - Through Hole -55°C ~ 150°C 625 mW - - TO-92 - PNP 700mV @ 50mA, 500mA 25 V
BC328-25-AP
BC328-25-AP
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 - - - - - - - - 800 mA 160 @ 100mA, 1V - - - 260MHz - - Through Hole -55°C ~ 150°C 625 mW - - TO-92 - PNP 700mV @ 50mA, 500mA 25 V
BC328-40-AP
BC328-40-AP
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 - - - - - - - - 800 mA 250 @ 100mA, 1V - - - 260MHz - - Through Hole -55°C ~ 150°C 625 mW - - TO-92 - PNP 700mV @ 50mA, 500mA 25 V
BC338-16-AP
BC338-16-AP
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 - - - - - - - - 800 mA 100 @ 300mA, 1V - - - 210MHz - - Through Hole -55°C ~ 150°C 625 mW - - TO-92 - NPN 700mV @ 50mA, 500mA 25 V
BC338-25-AP
BC338-25-AP
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 - - - - - - - - 800 mA 160 @ 300mA, 1V - - - 210MHz - - Through Hole -55°C ~ 150°C 625 mW - - TO-92 - NPN 700mV @ 50mA, 500mA 25 V
BC338-40-AP
BC338-40-AP
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 - - - - - - - - 800 mA 250 @ 300mA, 1V - - - 210MHz - - Through Hole -55°C ~ 150°C 625 mW - - TO-92 - NPN 700mV @ 50mA, 500mA 25 V
BC546C-AP
BC546C-AP
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 - - - - - - - - 100 mA 420 @ 2mA, 5V - - - 300MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - NPN 300mV @ 5mA, 100mA 65 V
BC556A-AP
BC556A-AP
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 - - - - - - - - 100 mA 120 @ 2mA, 5V - - - 150MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - PNP 650mV @ 5mA, 100mA 65 V
BC556C-AP
BC556C-AP
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 - - - - - - - - 100 mA 120 @ 2mA, 5V - - - 150MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - PNP 650mV @ 5mA, 100mA 65 V
BC557A-AP
BC557A-AP
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 - - - - - - - - 100 mA 120 @ 2mA, 5V - - - 150MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - PNP 650mV @ 5mA, 100mA 45 V
BC558A-AP
BC558A-AP
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 - - - - - - - - 100 mA 120 @ 2mA, 5V - - - 150MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - PNP 650mV @ 5mA, 100mA 30 V
BC558B-AP
BC558B-AP
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 - - - - - - - - 100 mA 120 @ 2mA, 5V - - - 150MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - PNP 650mV @ 5mA, 100mA 30 V
BC637-10-AP
BC637-10-AP
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 - - - - - - - - 1 A 63 @ 150mA, 2V - - - 100MHz - - Through Hole 150°C (TJ) 830 mW - - TO-92 - NPN 500mV @ 50mA, 500mA 60 V
BC637-16-AP
BC637-16-AP
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 - - - - - - - - 1 A 100 @ 150mA, 2V - - - 100MHz - - Through Hole 150°C (TJ) 830 mW - - TO-92 - NPN 500mV @ 50mA, 500mA 60 V
BC638-AP
BC638-AP
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 - - - - - - - - 1 A 100 @ 150mA, 2V - - - 100MHz - - Through Hole -65°C ~ 150°C (TJ) 830 mW - - TO-92 - PNP 500mV @ 50mA, 500mA 60 V
BC640-AP
BC640-AP
Download Datasheet for BC640-AP
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 - - - - - - - - 1 A 100 @ 150mA, 2V - - - 100MHz - - Through Hole -65°C ~ 150°C (TJ) 830 mW - - TO-92 - PNP 500mV @ 50mA, 500mA 100 V
BC849B-AP
BC849B-AP
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - 100MHz - - Surface Mount -55°C ~ 150°C 225 mW - - SOT-23 - NPN 500mV @ 5mA, 100mA 30 V
BUK9Y25-60E/GFX
BUK9Y25-60E/GFX
NXP Semiconductors
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BC849C-AP
BC849C-AP
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 - - - - - - - - 100 mA 420 @ 2mA, 5V - - - 100MHz - - Surface Mount -55°C ~ 150°C 225 mW - - SOT-23 - NPN 500mV @ 5mA, 100mA 30 V
D965-R-AP
D965-R-AP
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 - - - - - - - - 5 A 340 @ 500mA, 2V - - - - - - Through Hole -55°C ~ 150°C (TJ) 750 mW - - TO-92 - NPN 350mV @ 100mA, 3A 22 V
D965-T-AP
D965-T-AP
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 - - - - - - - - 5 A 560 @ 500mA, 2V - - - - - - Through Hole -55°C ~ 150°C (TJ) 750 mW - - TO-92 - NPN 350mV @ 100mA, 3A 22 V
KSD1616A-Y-AP
KSD1616A-Y-AP
Micro Commercial
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 - - - - - - - - 1 A 135 @ 100mA, 2V - - - 160MHz - - Through Hole -55°C ~ 150°C (TJ) 750 mW - - TO-92 - NPN 300mV @ 50mA, 1A 60 V
KSD1616-G-AP
KSD1616-G-AP
Micro Commercial
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 - - - - - - - - 1 A 200 @ 100mA, 2V - - - 160MHz - - Through Hole -55°C ~ 150°C (TJ) 750 mW - - TO-92 - NPN 300mV @ 50mA, 1A 50 V
KSD1616-L-AP
KSD1616-L-AP
Micro Commercial
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 - - - - - - - - 1 A 300 @ 100mA, 2V - - - 160MHz - - Through Hole -55°C ~ 150°C (TJ) 750 mW - - TO-92 - NPN 300mV @ 50mA, 1A 50 V
KSD1616-Y-AP
KSD1616-Y-AP
Micro Commercial
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 - - - - - - - - 1 A 135 @ 100mA, 2V - - - 160MHz - - Through Hole -55°C ~ 150°C (TJ) 750 mW - - TO-92 - NPN 300mV @ 50mA, 1A 50 V
KTA1281-O-AP
KTA1281-O-AP
Micro Commercial
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 - - - - - - - - 2 A 70 @ 500mA, 2V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-92 - PNP 500mV @ 50mA, 1A 50 V
KTA1281-Y-AP
KTA1281-Y-AP
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 - - - - - - - - 2 A 120 @ 500mA, 2V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 1 W - - TO-92 - PNP 500mV @ 50mA, 1A 50 V
KTC3199-BL-AP
KTC3199-BL-AP
Micro Commercial
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 - - - - - - - - 150 mA 300 @ 2mA, 6V - - - 80MHz - - Through Hole -55°C ~ 150°C (TJ) 400 mW - - TO-92S - NPN 250mV @ 10mA, 100mA 50 V
KTC3199-GR-AP
KTC3199-GR-AP
Micro Commercial
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 - - - - - - - - 150 mA 200 @ 2mA, 6V - - - 80MHz - - Through Hole -55°C ~ 150°C (TJ) 400 mW - - TO-92S - NPN 250mV @ 10mA, 100mA 50 V
KTC3199-O-AP
KTC3199-O-AP
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 - - - - - - - - 150 mA 70 @ 2mA, 6V - - - 80MHz - - Through Hole -55°C ~ 150°C (TJ) 400 mW - - TO-92S - NPN 250mV @ 10mA, 100mA 50 V
KTC3199-Y-AP
KTC3199-Y-AP
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 - - - - - - - - 150 mA 120 @ 2mA, 6V - - - 80MHz - - Through Hole -55°C ~ 150°C (TJ) 400 mW - - TO-92S - NPN 250mV @ 10mA, 100mA 50 V
M28S-B-AP
M28S-B-AP
Micro Commercial
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 - - - - - - - - 1 A 300 @ 500mA, 1V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - NPN 550mV @ 20mA, 600mA 20 V
M28S-C-AP
M28S-C-AP
Micro Commercial
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 - - - - - - - - 1 A 500 @ 500mA, 1V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - NPN 550mV @ 20mA, 600mA 20 V
M28S-D-AP
M28S-D-AP
Micro Commercial
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 - - - - - - - - 1 A 650 @ 500mA, 1V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - NPN 550mV @ 20mA, 600mA 20 V
M8550-B-AP
M8550-B-AP
Micro Commercial
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 - - - - - - - - 800 mA 80 @ 100mA, 1V - - - 150MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - PNP 500mV @ 80mA, 800mA 25 V
M8550-C-AP
M8550-C-AP
Micro Commercial
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 - - - - - - - - 800 mA 120 @ 100mA, 1V - - - 150MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - PNP 500mV @ 80mA, 800mA 25 V
Showing 8601-8650 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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