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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
JAN2N4239
JAN2N4239
Microchip Technology
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 - - - - - - - - 1 A 30 @ 250mA, 1V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 (TO-205AD) - NPN 600mV @ 100mA, 1A 80 V
JAN2N4235
JAN2N4235
Microchip Technology
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 - - - - - - - - 1 A 40 @ 100mA, 1V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 - PNP 600mV @ 100mA, 1A 60 V
JAN2N4236L
JAN2N4236L
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 - - - - - - - - 1 A 40 @ 100mA, 1V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 (TO-205AD) - PNP 600mV @ 100mA, 1A 80 V
JAN2N4234L
JAN2N4234L
Microchip Technology
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 - - - - - - - - 1 A 40 @ 100mA, 1V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 (TO-205AD) - PNP 600mV @ 100mA, 1A 40 V
JAN2N4235L
JAN2N4235L
Microchip Technology
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 - - - - - - - - 1 A 40 @ 100mA, 1V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 (TO-205AD) - PNP 600mV @ 100mA, 1A 60 V
2C3716
2C3716
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JANTXV2N6299
JANTXV2N6299
Microchip Technology
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 - - - - - - - - 500 µA 500 @ 1A, 3V - - - - - - Through Hole -65°C ~ 200°C (TJ) 64 W - - TO-66 (TO-213AA) - PNP - Darlington 2V @ 80mA, 8A 80 V
MVR2N2222AUBC/TR
MVR2N2222AUBC/TR
Microchip Technology
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 - - - - - - - - 800 mA 100 @ 150mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 500 mW - - UBC - NPN 1V @ 50mA, 500mA 50 V
2C3716-MSCL
2C3716-MSCL
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JANTX2N4234
JANTX2N4234
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 - - - - - - - - 1 A 30 @ 250mA, 1V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 (TO-205AD) - PNP 600mV @ 100mA, 1A 40 V
JANTX2N4235
JANTX2N4235
Microchip Technology
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 - - - - - - - - 1 A 30 @ 250mA, 1V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 (TO-205AD) - PNP 600mV @ 100mA, 1A 60 V
JANTX2N4237
JANTX2N4237
Microchip Technology
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 - - - - - - - - 1 A 30 @ 250mA, 1V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 (TO-205AD) - NPN 600mV @ 100mA, 1A 40 V
JANTX2N4238
JANTX2N4238
Microchip Technology
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 - - - - - - - - 1 A 30 @ 250mA, 1V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 (TO-205AD) - NPN 600mV @ 100mA, 1A 60 V
JANTX2N4239
JANTX2N4239
Microchip Technology
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 - - - - - - - - 1 A 30 @ 250mA, 1V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 (TO-205AD) - NPN 600mV @ 100mA, 1A 80 V
JANTX2N4236
JANTX2N4236
Microchip Technology
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 - - - - - - - - 1 A 40 @ 100mA, 1V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 - PNP 600mV @ 100mA, 1A 80 V
JANTX2N4235L
JANTX2N4235L
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 - - - - - - - - 1 A 40 @ 100mA, 1V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 (TO-205AD) - PNP 600mV @ 100mA, 1A 60 V
JANTX2N4234L
JANTX2N4234L
Microchip Technology
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 - - - - - - - - 1 A 40 @ 100mA, 1V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 (TO-205AD) - PNP 600mV @ 100mA, 1A 40 V
JANTX2N4236L
JANTX2N4236L
Microchip Technology
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 - - - - - - - - 1 A 40 @ 100mA, 1V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 (TO-205AD) - PNP 600mV @ 100mA, 1A 80 V
JANTX2N6301P
JANTX2N6301P
Microchip Technology
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 - - - - - - - - 8 A 750 @ 4A, 3V - - - - - - Through Hole -55°C ~ 200°C (TJ) 75 W - - TO-66 (TO-213AA) - NPN - Darlington 3V @ 80mA, 8A 80 V
JANTXV2N5664P
JANTXV2N5664P
Microchip Technology
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 - - - - - - - - 5 A 40 @ 1A, 5V - - - - - - Through Hole -65°C ~ 200°C (TJ) 2.5 W - - TO-66 (TO-213AA) - NPN 400mV @ 300mA, 3A 200 V
2N5339P
2N5339P
Microchip Technology
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 - - - - - - - - 5 A 60 @ 2A, 2V - - - - - - Through Hole -55°C ~ 200°C 1 W - - TO-39 (TO-205AD) - NPN 1.2V @ 500mA, 5A 100 V
2N5879
2N5879
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JANTXV2N3879
JANTXV2N3879
Microchip Technology
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 - - - - - - - - 7 A 20 @ 4A, 5V - - - - - - Through Hole -65°C ~ 200°C (TJ) 35 W - - TO-66 (TO-213AA) - NPN 1.2V @ 400mA, 4A 75 V
2N5676
2N5676
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2N5873
2N5873
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2N5874
2N5874
Microchip Technology
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2N5875
2N5875
Microchip Technology
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2N5876
2N5876
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2N5880
2N5880
Microchip Technology
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2N5881
2N5881
Microchip Technology
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 - - - - - - - - 15 A - - - - - - - - - 160 W - - - - NPN - 60 V
2N5882
2N5882
Microchip Technology
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2N5883
2N5883
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MSR2N3700UB/TR
MSR2N3700UB/TR
Microchip Technology
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 - - - - - - - - 1 A 100 @ 150mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 500 mW - - UB - NPN 500mV @ 50mA, 500mA 80 V
2N5666
2N5666
Microchip Technology
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 - - - - - - - - 5 A 40 @ 1A, 5V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1.2 W - - TO-5 - NPN 1V @ 1A, 5A 200 V
2N4398
2N4398
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2N4399
2N4399
Microchip Technology
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 - - - - - - - - 30 A 15 @ 15A, 2V - - - - - - Through Hole -55°C ~ 200°C (TJ) 5 W - - TO-204AD (TO-3) - PNP 750mV @ 1A, 10A 60 V
2N3792
2N3792
Microchip Technology
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 - - - - - - - - 10 A 50 @ 1A, 2V - - - - - - Through Hole -65°C ~ 200°C (TJ) 5 W - - TO-3 - PNP 2.5V @ 2A, 10A 80 V
2N5878
2N5878
Microchip Technology
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JAN2N3902
JAN2N3902
Microchip Technology
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 - - - - - - - - 3.5 A 30 @ 1A, 5V - - - - - - Through Hole -65°C ~ 200°C (TJ) 5 W - - TO-204AA (TO-3) - NPN 2.5V @ 700mA, 3.5A 400 V
2N6233
2N6233
Microchip Technology
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 - - - - - - - - 5 A 25 @ 1A, 5V - - - - - - Through Hole - 50 W - - TO-66 - NPN 2.5V @ 1A, 5A 225 V
2N1700
2N1700
Microchip Technology
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JAN2N6547
JAN2N6547
Microchip Technology
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 - - - - - - - - 15 A 12 @ 5A, 2V - - - - - - Through Hole -65°C ~ 200°C (TJ) 175 W - - TO-204AA (TO-3) - NPN 5V @ 3A, 15A 400 V
JANSD2N3700UB/TR
JANSD2N3700UB/TR
Microchip Technology
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 - - - - - - - - 1 A 100 @ 150mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 500 mW - - UB - NPN 500mV @ 50mA, 500mA 80 V
2N6211P
2N6211P
Microchip Technology
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 - - - - - - - - 2 A 30 @ 1A, 5V - - - - - - Through Hole -55°C ~ 200°C 3 W - - TO-66 (TO-213AA) - PNP 1.4V @ 125mA, 1A 225 V
2N1482
2N1482
Microchip Technology
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 - - - - - - - - 1.5 A 35 @ 200mA, 4V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-5 - NPN 750mV @ 10mA, 200mA 55 V
2N5884
2N5884
Microchip Technology
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2N1483
2N1483
Microchip Technology
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 - - - - - - - - 3 A 20 @ 750mA, 4V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1.75 W - - TO-8 - NPN 1.20V @ 75mA, 750A 40 V
2N1484
2N1484
Microchip Technology
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 - - - - - - - - 3 A 20 @ 750mA, 4V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1.75 W - - TO-8 - NPN 1.20V @ 75mA, 750A 55 V
2N5239
2N5239
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2N5264
2N5264
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 - - - - - - - - 10 A - - - - - - - Through Hole - 87 W - - TO-204AD (TO-3) - PNP - 180 V
Showing 8551-8600 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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