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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Current DC Current Gain (hFE) (Min) @ Ic, Vce Frequency Mounting Type Operating Temperature Power Supplier Device Package Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
BC337-25,126
BC337-25,126
Download Datasheet for BC337-25,126
NXP Semiconductors
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 500 mA 160 @ 100mA, 1V 100MHz Through Hole 150°C (TJ) 625 mW TO-92-3 NPN 700mV @ 50mA, 500mA 45 V
PN2222A,116
PN2222A,116
NXP Semiconductors
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 600 mA 100 @ 150mA, 10V 300MHz Through Hole 150°C (TJ) 500 mW TO-92-3 NPN 1V @ 50mA, 500mA 40 V
PN2907A,116
PN2907A,116
NXP Semiconductors
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 600 mA 100 @ 150mA, 10V 200MHz Through Hole 150°C (TJ) 500 mW TO-92-3 PNP 1.6V @ 50mA, 500mA 60 V
MJW0281A
MJW0281A
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On Semiconductor
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 15 A 75 @ 3A, 5V 30MHz Through Hole -65°C ~ 150°C (TJ) 150 W TO-247-3 NPN 1V @ 500mA, 5A 260 V
MJW0302A
MJW0302A
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On Semiconductor
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 15 A 75 @ 3A, 5V 30MHz Through Hole -65°C ~ 150°C (TJ) 150 W TO-247-3 PNP 1V @ 500mA, 5A 260 V
NJL1302D
NJL1302D
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On Semiconductor
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 15 A 75 @ 5A, 5V 30MHz Through Hole -65°C ~ 150°C (TJ) 200 W TO-264 PNP 3V @ 1A, 10A 260 V
NJL3281D
NJL3281D
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On Semiconductor
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 15 A 75 @ 5A, 5V 30MHz Through Hole -65°C ~ 150°C (TJ) 200 W TO-264 NPN 3V @ 1A, 10A 260 V
MMBT4124-7-F
MMBT4124-7-F
Download Datasheet for MMBT4124-7-F
Diodes Incorporated
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 200 mA 120 @ 2mA, 1V 300MHz Surface Mount -55°C ~ 150°C (TJ) 300 mW SOT-23-3 NPN 300mV @ 5mA, 50mA 25 V
TIP41CN
TIP41CN
Download Datasheet for TIP41CN
STMicroelectronics
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 6 A 15 @ 3A, 4V - Through Hole 150°C (TJ) 65 W TO-220 NPN 1.5V @ 600mA, 6A 100 V
TIP42CN
TIP42CN
Download Datasheet for TIP42CN
STMicroelectronics
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 6 A 15 @ 3A, 4V - Through Hole 150°C (TJ) 65 W TO-220 PNP 1.5V @ 600mA, 6A 100 V
BU941ZTFP
BU941ZTFP
STMicroelectronics
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 15 A 300 @ 5A, 10V - Through Hole 175°C (TJ) 55 W TO-220AB NPN - Darlington 1.8V @ 250mA, 10A 350 V
SO642
SO642
STMicroelectronics
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 100 mA 40 @ 30mA, 10V 50MHz Surface Mount 150°C (TJ) 310 mW SOT-23-3 NPN 500mV @ 2mA, 20mA 300 V
SO692
SO692
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STMicroelectronics
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 100 mA 25 @ 30mA, 10V 50MHz Surface Mount 150°C (TJ) 310 mW SOT-23-3 PNP 500mV @ 2mA, 20mA 300 V
STF715
STF715
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STMicroelectronics
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 1.5 A 40 @ 1A, 2V 50MHz Surface Mount - 1.4 W SOT-89-3 NPN 500mV @ 100mA, 1A 80 V
2DA1774S-7-F
2DA1774S-7-F
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Diodes Incorporated
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 150 mA 270 @ 1mA, 6V 140MHz Surface Mount -55°C ~ 150°C (TJ) 150 mW SOT-523 PNP 500mV @ 5mA, 50mA 50 V
DRDN010W-7
DRDN010W-7
Download Datasheet for DRDN010W-7
Diodes Incorporated
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 1 A 150 @ 100mA, 1V 100MHz Surface Mount -55°C ~ 150°C (TJ) 200 mW SOT-363 NPN + Diode (Isolated) 500mV @ 30mA, 300mA 18 V
2N5194G
2N5194G
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On Semiconductor
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 4 A 25 @ 1.5A, 2V 2MHz Through Hole -65°C ~ 150°C (TJ) 40 W TO-126 PNP 1.4V @ 1A, 4A 60 V
DVR2V5W-7
DVR2V5W-7
Download Datasheet for DVR2V5W-7
Diodes Incorporated
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 1 A 150 @ 100mA, 1V 100MHz Surface Mount -55°C ~ 150°C (TJ) 200 mW SOT-363 NPN + Zener Diode (Isolated) 500mV @ 30mA, 300mA 18 V
DVR3V3W-7
DVR3V3W-7
Download Datasheet for DVR3V3W-7
Diodes Incorporated
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 1 A 150 @ 100mA, 1V 100MHz Surface Mount -55°C ~ 150°C (TJ) 200 mW SOT-363 NPN + Zener Diode (Isolated) 500mV @ 30mA, 300mA 18 V
2SA2161J0L
2SA2161J0L
Download Datasheet for 2SA2161J0L
Panasonic Electronic Components
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 500 mA 270 @ 10mA, 2V 200MHz Surface Mount 125°C (TJ) 125 mW SSMini3-F1 PNP 250mV @ 10mA, 200mA 12 V
2SA216400L
2SA216400L
Download Datasheet for 2SA216400L
Panasonic Electronic Components
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 30 mA 70 @ 1mA, 10V 300MHz Surface Mount 125°C (TJ) 100 mW SSSMini3-F1 PNP 100mV @ 1mA, 10mA 20 V
2SA216300A
2SA216300A
Download Datasheet for 2SA216300A
Panasonic Electronic Components
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 30 mA 70 @ 1mA, 10V 300MHz Surface Mount 125°C (TJ) 100 mW ML3-N2 PNP 100mV @ 1mA, 10mA 20 V
2SA1837(F,M)
2SA1837(F,M)
Download Datasheet for 2SA1837(F,M)
Toshiba
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 1 A 100 @ 100mA, 5V 70MHz Through Hole 150°C (TJ) 2 W TO-220NIS PNP 1.5V @ 50mA, 500mA 230 V
2SA1962-O(Q)
2SA1962-O(Q)
Download Datasheet for 2SA1962-O(Q)
Toshiba
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 15 A 80 @ 1A, 5V 30MHz Through Hole 150°C (TJ) 130 W TO-3P(N) PNP 3V @ 800mA, 8A 230 V
2SC4793(F,M)
2SC4793(F,M)
Download Datasheet for 2SC4793(F,M)
Toshiba
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 1 A 100 @ 100mA, 5V 100MHz Through Hole 150°C (TJ) 2 W TO-220NIS NPN 1.5V @ 50mA, 500mA 230 V
2N3906RLRAG
2N3906RLRAG
Download Datasheet for 2N3906RLRAG
On Semiconductor
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 200 mA 100 @ 10mA, 1V 250MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92 (TO-226) PNP 400mV @ 5mA, 50mA 40 V
2N5089G
2N5089G
Download Datasheet for 2N5089G
On Semiconductor
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 50 mA 400 @ 100µA, 5V 50MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92 (TO-226) NPN 500mV @ 1mA, 10mA 25 V
2N4403RLRAG
2N4403RLRAG
Download Datasheet for 2N4403RLRAG
On Semiconductor
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 600 mA 100 @ 150mA, 2V 200MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92 (TO-226) PNP 750mV @ 50mA, 500mA 40 V
2N5087RLRAG
2N5087RLRAG
Download Datasheet for 2N5087RLRAG
On Semiconductor
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 50 mA 250 @ 100µA, 5V 40MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92 (TO-226) PNP 300mV @ 1mA, 10mA 50 V
2N6520RLRAG
2N6520RLRAG
Download Datasheet for 2N6520RLRAG
On Semiconductor
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 500 mA 20 @ 50mA, 10V 200MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92 (TO-226) PNP 1V @ 5mA, 50mA 350 V
BSP19AT1G
BSP19AT1G
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On Semiconductor
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 100 mA 40 @ 20mA, 10V 70MHz Surface Mount -65°C ~ 150°C (TJ) 800 mW SOT-223 (TO-261) NPN 500mV @ 4mA, 50mA 350 V
2N4124G
2N4124G
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On Semiconductor
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 200 mA 120 @ 2mA, 1V 300MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92 (TO-226) NPN 300mV @ 5mA, 50mA 25 V
2N5088G
2N5088G
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On Semiconductor
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 50 mA 300 @ 100µA, 5V 50MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92 (TO-226) NPN 500mV @ 1mA, 10mA 30 V
2N5302G
2N5302G
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On Semiconductor
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 30 A 15 @ 15A, 2V 2MHz Through Hole -65°C ~ 200°C (TJ) 200 W TO-204 (TO-3) NPN 3V @ 6A, 30A 60 V
2N5550G
2N5550G
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On Semiconductor
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 600 mA 60 @ 10mA, 5V 300MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92 (TO-226) NPN 250mV @ 5mA, 50mA 140 V
2N5655G
2N5655G
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On Semiconductor
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 500 mA 30 @ 100mA, 10mV 10MHz Through Hole -65°C ~ 150°C (TJ) 20 W TO-126 NPN 10V @ 100mA, 500mA 250 V
2N5657G
2N5657G
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On Semiconductor
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 500 mA 30 @ 100mA, 10V 10MHz Through Hole -65°C ~ 150°C (TJ) 20 W TO-126 NPN 10V @ 100mA, 500mA 350 V
2N5883G
2N5883G
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On Semiconductor
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 25 A 20 @ 10A, 4V 4MHz Through Hole -65°C ~ 200°C (TJ) 200 W TO-204 (TO-3) PNP 4V @ 6.25A, 25A 60 V
2N5886G
2N5886G
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 25 A 20 @ 10A, 4V 4MHz Through Hole -65°C ~ 200°C (TJ) 200 W TO-204 (TO-3) NPN 4V @ 6.25A, 25A 80 V
2N6038G
2N6038G
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On Semiconductor
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 4 A 750 @ 2A, 3V - Through Hole -65°C ~ 150°C (TJ) 40 W TO-126 NPN - Darlington 3V @ 40mA, 4A 60 V
2N6042G
2N6042G
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 8 A 1000 @ 3A, 4V - Through Hole -65°C ~ 150°C (TJ) 75 W TO-220 PNP - Darlington 2V @ 12mA, 3A 100 V
2N6052G
2N6052G
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On Semiconductor
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 12 A 750 @ 6A, 3V - Through Hole -65°C ~ 200°C (TJ) 150 W TO-204 (TO-3) PNP - Darlington 3V @ 120mA, 12A 100 V
2N6107G
2N6107G
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On Semiconductor
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 7 A 30 @ 2A, 4V 10MHz Through Hole -65°C ~ 150°C (TJ) 40 W TO-220 PNP 3.5V @ 3A, 7A 70 V
2N6109G
2N6109G
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On Semiconductor
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 7 A 30 @ 2.5A, 4V 10MHz Through Hole -65°C ~ 150°C (TJ) 40 W TO-220 PNP 3.5V @ 3A, 7A 50 V
2N6427G
2N6427G
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On Semiconductor
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 500 mA 20000 @ 100mA, 5V - Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92 (TO-226) NPN - Darlington 1.5V @ 500µA, 500mA 40 V
2N6497G
2N6497G
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On Semiconductor
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 5 A 10 @ 2.5A, 10V 5MHz Through Hole -65°C ~ 150°C (TJ) 80 W TO-220 NPN 5V @ 2A, 5A 250 V
2N6517G
2N6517G
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On Semiconductor
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 500 mA 20 @ 50mA, 10V 200MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92 (TO-226) NPN 1V @ 5mA, 50mA 350 V
BC327G
BC327G
Download Datasheet for BC327G
On Semiconductor
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 800 mA 100 @ 100mA, 1V 260MHz Through Hole -55°C ~ 150°C (TJ) 625 mW TO-92 (TO-226) PNP 700mV @ 50mA, 500mA 45 V
BUL45G
BUL45G
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On Semiconductor
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 5 A 14 @ 300mA, 5V 12MHz Through Hole -65°C ~ 150°C (TJ) 75 W TO-220 NPN 400mV @ 400mA, 2A 400 V
MJ15011G
MJ15011G
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 10 A 20 @ 2A, 2V - Through Hole -65°C ~ 200°C (TJ) 200 W TO-204 (TO-3) NPN 1V @ 400mA, 4A 250 V
Showing 7551-7600 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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