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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
2SD1819ASL
2SD1819ASL
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 - - - - - - - - 100 mA 290 @ 2mA, 10V - - - 150MHz - - Surface Mount 150°C (TJ) 150 mW - - SMini3-G1 - NPN 300mV @ 10mA, 100mA 50 V
2SD18240RL
2SD18240RL
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 - - - - - - - - 20 mA 400 @ 2mA, 10V - - - 90MHz - - Surface Mount 150°C (TJ) 150 mW - - SMini3-G1 - NPN 200mV @ 1mA, 10mA 100 V
2SD18240SL
2SD18240SL
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 - - - - - - - - 20 mA 600 @ 2mA, 10V - - - 90MHz - - Surface Mount 150°C (TJ) 150 mW - - SMini3-G1 - NPN 200mV @ 1mA, 10mA 100 V
2SD262300L
2SD262300L
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 - - - - - - - - 500 mA 200 @ 500mA, 2V - - - 200MHz - - Surface Mount 150°C (TJ) 150 mW - - SMini3-G1 - NPN 400mV @ 20mA, 500mA 20 V
2SD1820ARL
2SD1820ARL
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 - - - - - - - - 500 mA 120 @ 150mA, 10V - - - 200MHz - - Surface Mount 150°C (TJ) 150 mW - - SMini3-G1 - NPN 600mV @ 30mA, 300mA 50 V
2SC3311AQA
2SC3311AQA
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 - - - - - - - - 100 mA 160 @ 2mA, 10V - - - 150MHz - - Through Hole 150°C (TJ) 300 mW - - NS-B1 - NPN 300mV @ 10mA, 100mA 50 V
2SC3311ARA
2SC3311ARA
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 - - - - - - - - 100 mA 210 @ 2mA, 10V - - - 150MHz - - Through Hole 150°C (TJ) 300 mW - - NS-B1 - NPN 300mV @ 10mA, 100mA 50 V
2SC3311ASA
2SC3311ASA
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 - - - - - - - - 100 mA 290 @ 2mA, 10V - - - 150MHz - - Through Hole 150°C (TJ) 300 mW - - NS-B1 - NPN 300mV @ 10mA, 100mA 50 V
2SD14500RA
2SD14500RA
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 - - - - - - - - 500 mA 200 @ 500mA, 2V - - - 200MHz - - Through Hole 150°C (TJ) 300 mW - - NS-B1 - NPN 400mV @ 20mA, 500mA 20 V
2SD14500SA
2SD14500SA
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 - - - - - - - - 500 mA 300 @ 500mA, 2V - - - 200MHz - - Through Hole 150°C (TJ) 300 mW - - NS-B1 - NPN 400mV @ 20mA, 500mA 20 V
2SD14500TA
2SD14500TA
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 - - - - - - - - 500 mA 400 @ 500mA, 2V - - - 200MHz - - Through Hole 150°C (TJ) 300 mW - - NS-B1 - NPN 400mV @ 20mA, 500mA 20 V
2SD1423ARA
2SD1423ARA
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 - - - - - - - - 500 mA 120 @ 150mA, 10V - - - 200MHz - - Through Hole 150°C (TJ) 300 mW - - NS-B1 - NPN 600mV @ 30mA, 300mA 50 V
2SD19960RA
2SD19960RA
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 - - - - - - - - 500 mA 200 @ 500mA, 2V - - - 200MHz - - Through Hole 150°C (TJ) 600 mW - - MT-1-A1 - NPN 400mV @ 20mA, 500mA 20 V
2SD19960SA
2SD19960SA
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 - - - - - - - - 500 mA 300 @ 500mA, 2V - - - 200MHz - - Through Hole 150°C (TJ) 600 mW - - MT-1-A1 - NPN 400mV @ 20mA, 500mA 20 V
2SA1246T-AA
2SA1246T-AA
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2SD1994ARA
2SD1994ARA
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 - - - - - - - - 1 A 120 @ 500mA, 10V - - - 200MHz - - Through Hole 150°C (TJ) 1 W - - MT-2-A1 - NPN 400mV @ 50mA, 500mA 50 V
2SD1994ASA
2SD1994ASA
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 - - - - - - - - 1 A 170 @ 500mA, 10V - - - 200MHz - - Through Hole 150°C (TJ) 1 W - - MT-2-A1 - NPN 400mV @ 50mA, 500mA 50 V
2SD1991ARA
2SD1991ARA
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 - - - - - - - - 100 mA 210 @ 2mA, 10V - - - 150MHz - - Through Hole 150°C (TJ) 400 mW - - MT-1-A1 - NPN 300mV @ 10mA, 100mA 50 V
2SD21770SA
2SD21770SA
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 - - - - - - - - 2 A 170 @ 200mA, 2V - - - 110MHz - - Through Hole 150°C (TJ) 1 W - - MT-2-A1 - NPN 300mV @ 50mA, 1A 50 V
BC817-16-7
BC817-16-7
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Diodes Incorporated
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 - - - - - - - - 800 mA 100 @ 100mA, 1V - - - 100MHz - - Surface Mount -65°C ~ 150°C (TJ) 310 mW - - SOT-23-3 - NPN 700mV @ 50mA, 500mA 45 V
MMBT3904T-7
MMBT3904T-7
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Diodes Incorporated
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 - - - - - - - - 200 mA 100 @ 10mA, 1V - - - 300MHz - - Surface Mount -55°C ~ 150°C (TJ) 150 mW - - SOT-523 - NPN 300mV @ 5mA, 50mA 40 V
MMBT4401T-7
MMBT4401T-7
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Diodes Incorporated
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 - - - - - - - - 600 mA 100 @ 150mA, 1V - - - 250MHz - - Surface Mount -55°C ~ 150°C (TJ) 150 mW - - SOT-523 - NPN 750mV @ 50mA, 500mA 40 V
MMBT4403T-7
MMBT4403T-7
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Diodes Incorporated
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 - - - - - - - - 600 mA 100 @ 150mA, 2V - - - 200MHz - - Surface Mount -55°C ~ 150°C (TJ) 150 mW - - SOT-523 - PNP 750mV @ 50mA, 500mA 40 V
MMBT2907AT-7
MMBT2907AT-7
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Diodes Incorporated
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - 200MHz - - Surface Mount -55°C ~ 150°C (TJ) 150 mW - - SOT-523 - PNP 1.6V @ 50mA, 500mA 60 V
2SB1131S
2SB1131S
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BC807-16-7
BC807-16-7
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Diodes Incorporated
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 - - - - - - - - 500 mA 100 @ 100mA, 1V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 310 mW - - SOT-23-3 - PNP 700mV @ 50mA, 500mA 45 V
BC807-25-7
BC807-25-7
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Diodes Incorporated
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 - - - - - - - - 500 mA 160 @ 100mA, 1V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 310 mW - - SOT-23-3 - PNP 700mV @ 50mA, 500mA 45 V
BC807-40-7
BC807-40-7
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Diodes Incorporated
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 - - - - - - - - 500 mA 250 @ 100mA, 1V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 310 mW - - SOT-23-3 - PNP 700mV @ 50mA, 500mA 45 V
BC817-25-7
BC817-25-7
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Diodes Incorporated
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 - - - - - - - - 500 mA 160 @ 100mA, 1V - - - 100MHz - - Surface Mount -65°C ~ 150°C (TJ) 310 mW - - SOT-23-3 - NPN 700mV @ 50mA, 500mA 45 V
BC817-40-7
BC817-40-7
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Diodes Incorporated
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 - - - - - - - - 800 mA 250 @ 100mA, 1V - - - 100MHz - - Surface Mount -65°C ~ 150°C (TJ) 310 mW - - SOT-23-3 - NPN 700mV @ 50mA, 500mA 45 V
BC857AT-7
BC857AT-7
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Diodes Incorporated
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 - - - - - - - - 100 mA 125 @ 2mA, 5V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 150 mW - - SOT-523 - PNP 650mV @ 5mA, 100mA 45 V
BC857BT-7
BC857BT-7
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Diodes Incorporated
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 - - - - - - - - 100 mA 220 @ 2mA, 5V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 150 mW - - SOT-523 - PNP 650mV @ 5mA, 100mA 45 V
BC847AT-7
BC847AT-7
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Diodes Incorporated
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 - - - - - - - - 100 mA 110 @ 2mA, 5V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 150 mW - - SOT-523 - NPN 600mV @ 5mA, 100mA 45 V
BC847BT-7
BC847BT-7
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Diodes Incorporated
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 - - - - - - - - 100 mA 200 @ 2mA, 5V - - - 100MHz - - Surface Mount -55°C ~ 150°C (TJ) 150 mW - - SOT-523 - NPN 600mV @ 5mA, 100mA 45 V
TIP112TU
TIP112TU
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On Semiconductor
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 - - - - - - - - 2 A 1000 @ 1A, 4V - - - - - - Through Hole 150°C (TJ) 2 W - - TO-220-3 - NPN - Darlington 2.5V @ 8mA, 2A 100 V
PUMD12/L135
PUMD12/L135
NXP Semiconductors
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MPSA06_D26Z
MPSA06_D26Z
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On Semiconductor
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 - - - - - - - - 500 mA 100 @ 100mA, 1V - - - 100MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN 250mV @ 10mA, 100mA 80 V
MPSA42_D26Z
MPSA42_D26Z
On Semiconductor
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 - - - - - - - - 500 mA 40 @ 30mA, 10V - - - 50MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN 500mV @ 2mA, 20mA 300 V
BC858C
BC858C
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On Semiconductor
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 - - - - - - - - 100 mA 420 @ 2mA, 5V - - - 150MHz - - Surface Mount 150°C (TJ) 310 mW - - SOT-23-3 - PNP 650mV @ 5mA, 100mA 30 V
MMBT5087
MMBT5087
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On Semiconductor
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 - - - - - - - - 100 mA 250 @ 100µA, 5V - - - 40MHz - - Surface Mount -55°C ~ 150°C (TJ) 350 mW - - SOT-23-3 - PNP 300mV @ 1mA, 10mA 50 V
ZXTS1000NE6TA
ZXTS1000NE6TA
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Diodes Incorporated
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 - - - - - - - - 1.25 A 200 @ 500mA, 2V - - - 220MHz - - Surface Mount -55°C ~ 150°C (TJ) 885 mW - - SOT-23-6 - PNP + Diode (Isolated) 240mV @ 100mA, 1.25A 12 V
ZXTAM322TA
ZXTAM322TA
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Diodes Incorporated
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 - - - - - - - - 4.5 A 200 @ 3A, 2V - - - 120MHz - - Surface Mount -55°C ~ 150°C (TJ) 3 W - - 3-MLP/DFN (2x2) - NPN 280mV @ 50mA, 4.5A 15 V
ZXTBM322TA
ZXTBM322TA
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Diodes Incorporated
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 - - - - - - - - 4.5 A 200 @ 2A, 2V - - - 140MHz - - Surface Mount -55°C ~ 150°C (TJ) 3 W - - 3-MLP/DFN (2x2) - NPN 270mV @ 125mA, 4.5A 20 V
ZXT1M322TA
ZXT1M322TA
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Diodes Incorporated
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 - - - - - - - - 4 A 180 @ 2.5A, 2V - - - 110MHz - - Surface Mount -55°C ~ 150°C (TJ) 3 W - - 3-MLP/DFN (2x2) - PNP 300mV @ 150mA, 4A 12 V
ZXT2M322TA
ZXT2M322TA
Diodes Incorporated
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 - - - - - - - - 3.5 A 150 @ 2A, 2V - - - 180MHz - - Surface Mount -55°C ~ 150°C (TJ) 3 W - - 3-MLP/DFN (2x2) - PNP 300mV @ 350mA, 3.5A 20 V
2SA20670PA
2SA20670PA
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Panasonic Electronic Components
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 - - - - - - - - 3 A 160 @ 1A, 4V - - - 90MHz - - Through Hole 150°C (TJ) 2 W - - MT-4-A1 - PNP 800mV @ 375mA, 3A 60 V
2SA20670QA
2SA20670QA
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Panasonic Electronic Components
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 - - - - - - - - 3 A 120 @ 1A, 4V - - - 90MHz - - Through Hole 150°C (TJ) 2 W - - MT-4-A1 - PNP 800mV @ 375mA, 3A 60 V
2SC57880PA
2SC57880PA
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Panasonic Electronic Components
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 - - - - - - - - 3 A 160 @ 1A, 4V - - - 180MHz - - Through Hole 150°C (TJ) 2 W - - MT-4-A1 - NPN 800mV @ 375mA, 3A 60 V
2SC57880QA
2SC57880QA
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Panasonic Electronic Components
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 - - - - - - - - 3 A 120 @ 1A, 4V - - - 180MHz - - Through Hole 150°C (TJ) 2 W - - MT-4-A1 - NPN 800mV @ 375mA, 3A 60 V
2SD11990S
2SD11990S
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Panasonic Electronic Components
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 - - - - - - - - 50 mA 600 @ 2mA, 10V - - - 120MHz - - Through Hole 150°C (TJ) 400 mW - - M-A1 - NPN 200mV @ 1mA, 10mA 40 V
Showing 7401-7450 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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