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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
TIP30C
TIP30C
NTE Electronics
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 - - - - - - - - 1 A 15 @ 1A, 4V - - - - - - Through Hole 150°C (TJ) 2 W - - TO-220 - PNP 700mV @ 125mA, 1A 100 V
2N6487
2N6487
Harris Semiconductor
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 - - - - - - - - 15 A 20 @ 5A, 4V - - - 5MHz - - Through Hole -65°C ~ 150°C (TJ) 1.8 W - - TO-220AB - NPN 3.5V @ 5A, 15A 60 V
TIP47
TIP47
NTE Electronics
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 - - - - - - - - 1 A 30 @ 300mA, 10V - - - 10MHz - - Through Hole -65°C ~ 150°C (TJ) 40 W - - TO-220 - NPN 1V @ 200mA, 1A 250 V
KSC5030FRTU
KSC5030FRTU
On Semiconductor
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 - - - - - - - - 6 A 10 @ 600mA, 5V - - - - - - Through Hole - 60 W - - TO-3PF - NPN 2V @ 600mA, 3A 800 V
2N6126
2N6126
Harris Semiconductor
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 - - - - - - - - 4 A 20 @ 1.5A, 2V - - - 2.5MHz - - Through Hole -65°C ~ 150°C (TJ) 40 W - - TO-220-3 - PNP 1.4V @ 1A, 4A 80 V
2SC5669
2SC5669
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TE02549
TE02549
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NTE288H
NTE288H
NTE Electronics
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 - - - - - - - - 500 mA 30 @ 30mA, 10V - - - 200MHz - - Through Hole 150°C (TJ) 625 mW - - TO-92 - PNP 1V @ 5mA, 50mA 350 V
NTE287H
NTE287H
NTE Electronics
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 - - - - - - - - 500 mA 30 @ 30mA, 10V - - - 200MHz - - Through Hole 150°C (TJ) 625 mW - - TO-92 - NPN 1V @ 5mA, 50mA 350 V
TIP31B
TIP31B
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 - - - - - - - - 3 A 10 @ 3A, 4V - - - 3MHz - - Through Hole 150°C (TJ) 2 W - - TO-220-3 - NPN 1.2V @ 375mA, 3A 80 V
TIP41B
TIP41B
NTE Electronics
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 - - - - - - - - 6 A 15 @ 3A, 4V - - - 3MHz - - Through Hole 150°C (TJ) 2 W - - TO-220-3 - NPN 1.5V @ 600mA, 6A 80 V
TIP31C
TIP31C
NTE Electronics
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 - - - - - - - - 3 A 10 @ 3A, 4V - - - 3MHz - - Through Hole -65°C ~ 150°C (TJ) 2 W - - TO-220 - NPN 1.2V @ 375mA, 3A 100 V
BCW65A
BCW65A
Infineon Technologies
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TIP48
TIP48
NTE Electronics
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 - - - - - - - - 1 A 30 @ 300mA, 10V - - - 10MHz - - Through Hole -65°C ~ 150°C (TJ) 40 W - - TO-220 - NPN 1V @ 200mA, 1A 300 V
UPA2003C-A
UPA2003C-A
Renesas
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MPQ6842
MPQ6842
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D44E1
D44E1
Harris Semiconductor
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 - - - - - - - - 10 A 1000 @ 5A, 5V - - - - - - Through Hole -55°C ~ 150°C (TJ) 1.67 W - - TO-220 - NPN - Darlington 2V @ 20mA, 10A 40 V
FGP3040G2
FGP3040G2
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CA3127ER2489
CA3127ER2489
Harris Semiconductor
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2SC4224M-E-SY
2SC4224M-E-SY
Sanyo Denki
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NTE2684
NTE2684
NTE Electronics
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 - - - - - - - - 5 A 45 @ 500mA, 10V - - - 100MHz - - Through Hole 150°C (TJ) 15 W - - TO-126 - NPN 1.2V @ 700mA, 7A 120 V
2N6129
2N6129
Harris Semiconductor
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2SB1508R
2SB1508R
Sanyo Denki
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MTP1306
MTP1306
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TIP122L-BP
TIP122L-BP
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Micro Commercial
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 - - - - - - - - 5 A 1000 @ 3A, 5V - - - - - - Through Hole -55°C ~ 150°C (TJ) 2 W - - TO-220AB - NPN 4V @ 20mA, 5A 100 V
BC56-16PAS115
BC56-16PAS115
NXP Semiconductors
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TIP30A
TIP30A
NTE Electronics
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 - - - - - - - - 1 A 15 @ 1A, 4V - - - - - - Through Hole 150°C (TJ) 2 W - - TO-220 - PNP 700mV @ 125mA, 1A 60 V
2N6730
2N6730
NTE Electronics
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 - - - - - - - - 2 A 80 @ 50mA, 1V - - - 500MHz - - Through Hole -65°C ~ 150°C (TJ) 1 W - - TO-237 - PNP 500mV @ 10mA, 250mA 100 V
TIP116
TIP116
NTE Electronics
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 - - - - - - - - 2 A 1000 @ 1A, 4V - - - 25MHz - - Through Hole -65°C ~ 150°C (TJ) 50 W - - TO-220-3 - PNP - Darlington 2.5V @ 8mA, 2A 80 V
2SC4256
2SC4256
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2SD1137-E
2SD1137-E
Renesas
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TIP49
TIP49
NTE Electronics
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 - - - - - - - - 1 A 30 @ 300mA, 10V - - - 10MHz - - Through Hole -65°C ~ 150°C (TJ) 40 W - - TO-220 - NPN 1V @ 200mA, 2A 350 V
H5N2521FN-E#T2
H5N2521FN-E#T2
Renesas
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H5N2521FN-E-AR
H5N2521FN-E-AR
Renesas
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BC69-16PAS115
BC69-16PAS115
Download Datasheet for BC69-16PAS115
NXP Semiconductors
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NTE194
NTE194
NTE Electronics
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 - - - - - - - - 600 mA 80 @ 10mA, 5V - - - 300MHz - - Through Hole -55°C ~ 150°C (TJ) 350 mW - - TO-92 - NPN 200mV @ 5mA, 50mA 160 V
NTE287
NTE287
NTE Electronics
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 - - - - - - - - 500 mA 40 @ 10mA, 10V - - - 50MHz - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92 - NPN 500mV @ 2mA, 20mA 300 V
NTE2362
NTE2362
NTE Electronics
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 - - - - - - - - 500 mA 200 @ 10mA, 5V - - - 300MHz - - Through Hole -55°C ~ 150°C (TJ) 300 mW - - TO-92S - PNP 300mV @ 10mA, 100mA 50 V
D44Q3
D44Q3
Harris Semiconductor
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 - - - - - - - - 4 A 30 @ 200mA, 10V - - - 50MHz - - Through Hole -55°C ~ 150°C (TJ) 1.67 W - - TO-220AB - NPN 1V @ 200mA, 2A 175 V
FJP5021OTU
FJP5021OTU
On Semiconductor
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 - - - - - - - - 5 A 20 @ 600mA, 5V - - - 18MHz - - Through Hole 150°C (TJ) 50 W - - TO-220-3 - NPN 1V @ 600mA, 3A 500 V
KSD362RTU
KSD362RTU
On Semiconductor
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 - - - - - - - - 5 A 40 @ 5A, 5V - - - 10MHz - - Through Hole 150°C (TJ) 40 W - - TO-220-3 - NPN 1V @ 500mA, 5A 70 V
KSA992PTA
KSA992PTA
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On Semiconductor
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 - - - - - - - - 50 mA 200 @ 1mA, 6V - - - 100MHz - - Through Hole 150°C (TJ) 500 mW - - TO-92-3 - PNP 300mV @ 1mA, 10mA 120 V
MPS6514
MPS6514
On Semiconductor
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 - - - - - - - - 200 mA 150 @ 2mA, 10V - - - - - - Through Hole -55°C ~ 150°C (TJ) 625 mW - - TO-92-3 - NPN 500mV @ 5mA, 50mA 25 V
2SC3750M-CC7
2SC3750M-CC7
On Semiconductor
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KSC1008CYBU
KSC1008CYBU
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On Semiconductor
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 - - - - - - - - 700 mA 120 @ 50mA, 2V - - - 50MHz - - Through Hole 150°C (TJ) 800 mW - - TO-92-3 - NPN 400mV @ 50mA, 500mA 60 V
KSA733CYBU
KSA733CYBU
Download Datasheet for KSA733CYBU
On Semiconductor
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 - - - - - - - - 150 mA 120 @ 1mA, 6V - - - 180MHz - - Through Hole 150°C (TJ) 250 mW - - TO-92-3 - PNP 300mV @ 10mA, 100mA 50 V
MJE171STU
MJE171STU
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On Semiconductor
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 - - - - - - - - 3 A 50 @ 100mA, 1V - - - 50MHz - - Through Hole 150°C (TJ) 1.5 W - - TO-126-3 - PNP 1.7V @ 600mA, 3A 60 V
MMBTA42LT1
MMBTA42LT1
Infineon Technologies
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 - - - - - - - - 500 mA 40 @ 30mA, 10V - - - 50MHz - - Surface Mount - 225 mW - - SOT-23-3 (TO-236) - NPN 500mV @ 2mA, 20mA 300 V
MMBTA06LT1
MMBTA06LT1
Infineon Technologies
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 - - - - - - - - 500 mA 100 @ 100mA, 1V - - - 100MHz - - Surface Mount - 225 mW - - SOT-23-3 (TO-236) - NPN 250mV @ 10mA, 100mA 80 V
MJD32CTM
MJD32CTM
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 - - - - - - - - 3 A 10 @ 3A, 4V - - - 3MHz - - Surface Mount 150°C (TJ) 1.56 W - - D-Pak - PNP 1.2V @ 375mA, 3A 100 V
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About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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