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Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for applications such as new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single ?

Transistors - Bipolar (BJT) - Single are semiconductor devices that control current flow and amplify signals in electronic applications. They are commonly used in production electronics assembly and maintenance tasks. Important specifications for selection include Current, which determines the maximum load the transistor can handle; DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing alternatives is crucial for procurement teams to mitigate risks.

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Part & Mfr Total Stock Pricing & RFQ Base Cutoff Current Collector Current Collector Current - Continuous Collector Cutoff Current Collector-Base Breakdown Voltage Collector-Base Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Voltage Current DC Current Gain (hFE) (Min) @ Ic, Vce DC Current Gain (hFE) - Min Emitter-Base Breakdown Voltage Emitter-Base Voltage Frequency Halogen Free Lead Spacing Mounting Type Operating Temperature Power Power Dissipation (Max) Storage Temperature Supplier Device Package Total Device Dissipation Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
2N5867
2N5867
Microchip Technology
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 - - - - - - - - 5 A - - - - - - - Through Hole - 87.5 W - - TO-3 - PNP - 60 V
2N5868
2N5868
Microchip Technology
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2N5871
2N5871
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2N5872
2N5872
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JANS2N2222AL
JANS2N2222AL
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Microchip Technology
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 - - - - - - - - 800 mA 100 @ 150mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 500 mW - - TO-18 (TO-206AA) - NPN 1V @ 50mA, 500mA 50 V
JANS2N2907AL
JANS2N2907AL
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 500 mW - - TO-18 (TO-206AA) - PNP 1.6V @ 50mA, 500mA 60 V
JANS2N5153
JANS2N5153
Microchip Technology
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 - - - - - - - - 50 µA 70 @ 2.5A, 5V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-39 (TO-205AD) - PNP 1.5V @ 500mA, 5A 80 V
JANS2N5154L
JANS2N5154L
Microchip Technology
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 - - - - - - - - 1 mA 70 @ 2.5A, 5V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-5 - NPN 1.5V @ 500mA, 5A 80 V
JANS2N5153L
JANS2N5153L
Microchip Technology
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 - - - - - - - - 1 mA 70 @ 2.5A, 5V - - - - - - Through Hole -65°C ~ 200°C (TJ) 1 W - - TO-5 - PNP 1.5V @ 500mA, 5A 80 V
2C6350
2C6350
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JANS2N2906AUB
JANS2N2906AUB
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 - - - - - - - - 600 mA 40 @ 150mA, 10V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 500 mW - - UB - PNP 1.6V @ 50mA, 500mA 60 V
JANTXV2N3902
JANTXV2N3902
Microchip Technology
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 - - - - - - - - 3.5 A 30 @ 1A, 5V - - - - - - Through Hole -65°C ~ 200°C (TJ) 5 W - - TO-204AA (TO-3) - NPN 2.5V @ 700mA, 3.5A 400 V
JANTX2N5157
JANTX2N5157
Microchip Technology
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 - - - - - - - - 3.5 A 30 @ 1A, 5V - - - - - - Through Hole -65°C ~ 200°C (TJ) 5 W - - TO-204AA (TO-3) - NPN 2.5V @ 700mA, 3.5A 500 V
JANS2N2907A
JANS2N2907A
Microchip Technology
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 500 mW - - TO-206AA (TO-18) - PNP 1.6V @ 50mA, 500mA 60 V
2N4914
2N4914
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JANS2N2905A
JANS2N2905A
Microchip Technology
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 - - - - - - - - 600 mA 100 @ 150mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 800 mW - - TO-39 - PNP 1.6V @ 50mA, 500mA 60 V
JANS2N2904A
JANS2N2904A
Microchip Technology
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 - - - - - - - - 1 µA 40 @ 150mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 800 mW - - TO-39 (TO-205AD) - PNP 1.6V @ 50mA, 500mA 60 V
JANS2N2904AL
JANS2N2904AL
Microchip Technology
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 - - - - - - - - 1 µA 40 @ 150mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 800 mW - - TO-5 - PNP 1.6V @ 50mA, 500mA 60 V
JANS2N2905AL
JANS2N2905AL
Microchip Technology
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 - - - - - - - - 1 µA 100 @ 150mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 800 mW - - TO-5 - PNP 1.6V @ 50mA, 500mA 60 V
JANS2N2906A
JANS2N2906A
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Microchip Technology
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 - - - - - - - - 600 mA 40 @ 150mA, 10V - - - - - - Through Hole -65°C ~ 200°C (TJ) 500 mW - - TO-18 (TO-206AA) - PNP 1.6V @ 50mA, 500mA 60 V
2N333
2N333
Microchip Technology
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2N333A
2N333A
Microchip Technology
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2N335A
2N335A
Microchip Technology
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 - - - - - - - - - - - - - - - - Through Hole - - - - TO-5 - - - -
2N336A
2N336A
Microchip Technology
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 - - - - - - - - - - - - - - - - Through Hole - - - - TO-5 - - - -
2N327A
2N327A
Microchip Technology
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2N328A
2N328A
Microchip Technology
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2N329A
2N329A
Microchip Technology
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2N333ALT2
2N333ALT2
Microchip Technology
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2N333AT2
2N333AT2
Microchip Technology
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JAN2N4033UA
JAN2N4033UA
Microchip Technology
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 - - - - - - - - 1 A 100 @ 100mA, 5V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 500 mW - - UA - PNP 1V @ 100mA, 1A 80 V
JAN2N4033UA/TR
JAN2N4033UA/TR
Microchip Technology
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 - - - - - - - - 1 A 100 @ 100mA, 5V - - - - - - Surface Mount -65°C ~ 200°C (TJ) 500 mW - - UA - PNP 1V @ 100mA, 1A 80 V
JAN2N5039
JAN2N5039
Microchip Technology
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 - - - - - - - - 1 µA 30 @ 2A, 5V - - - - - - Through Hole -65°C ~ 200°C (TA) 140 W - - TO-3 - NPN 2.5V @ 5A, 20A 75 V
2N5613
2N5613
Microchip Technology
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 - - - - - - - - 5 A - - - - - - - Through Hole - 58 W - - TO-204AD (TO-3) - PNP - 60 V
2N5627
2N5627
Microchip Technology
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 - - - - - - - - 10 A - - - - - - - Through Hole - 116 W - - TO-204AD (TO-3) - PNP - 100 V
2N5623
2N5623
Microchip Technology
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 - - - - - - - - 10 A - - - - - - - Through Hole - 116 W - - TO-204AD (TO-3) - PNP - 80 V
2N5625
2N5625
Microchip Technology
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 - - - - - - - - 10 A - - - - - - - Through Hole -65°C ~ 200°C (TJ) 116 W - - TO-204AD (TO-3) - PNP 1.5V @ 1mA, 5mA 80 V
2N5616
2N5616
Microchip Technology
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 - - - - - - - - 5 A - - - - - - - Through Hole - 58 W - - TO-204AD (TO-3) - PNP - 80 V
2N5631
2N5631
Microchip Technology
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 - - - - - - - - 16 A - - - - - - - Through Hole - 200 W - - TO-204AD (TO-3) - PNP - 140 V
2N5622
2N5622
Microchip Technology
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 - - - - - - - - 10 A - - - - - - - Through Hole - 116 W - - TO-204AD (TO-3) - NPN - 60 V
2N5628
2N5628
Microchip Technology
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 - - - - - - - - 10 A - - - - - - - Through Hole -65°C ~ 200°C (TJ) 116 W - - TO-204AD (TO-3) - PNP 1.5V @ 1mA, 5mA 100 V
2N5619
2N5619
Microchip Technology
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 - - - - - - - - 5 A - - - - - - - Through Hole -65°C ~ 200°C (TJ) 58 W - - TO-204AD (TO-3) - PNP 1.5V @ 500µA, 2.5mA 100 V
2N5617
2N5617
Microchip Technology
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 - - - - - - - - 5 A - - - - - - - Through Hole - 58 W - - TO-204AD (TO-3) - PNP - 80 V
2N5621
2N5621
Microchip Technology
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 - - - - - - - - 10 A - - - - - - - Through Hole - 116 W - - TO-204AD (TO-3) - PNP - 60 V
2N5633
2N5633
Microchip Technology
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 - - - - - - - - 10 A - - - - - - - Through Hole - 150 W - - TO-204AD (TO-3) - PNP - 120 V
2N5629
2N5629
Microchip Technology
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 - - - - - - - - 16 A - - - - - - - Through Hole - 200 W - - TO-204AD (TO-3) - PNP - 100 V
2N5626
2N5626
Microchip Technology
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 - - - - - - - - 10 A - - - - - - - Through Hole -65°C ~ 200°C (TJ) 116 W - - TO-204AD (TO-3) - NPN 1.5V @ 1mA, 5mA 80 V
2N5634
2N5634
Microchip Technology
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 - - - - - - - - 10 A - - - - - - - Through Hole - 150 W - - TO-204AD (TO-3) - PNP - 140 V
2N5630
2N5630
Microchip Technology
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 - - - - - - - - 16 A - - - - - - - Through Hole -65°C ~ 200°C (TJ) 200 W - - TO-204AD (TO-3) - PNP - 120 V
2N5614
2N5614
Microchip Technology
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 - - - - - - - - 5 A - - - - - - - Through Hole - 58 W - - TO-204AD (TO-3) - PNP - 60 V
2N5615
2N5615
Microchip Technology
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 - - - - - - - - 5 A - - - - - - - Through Hole -65°C ~ 200°C (TJ) 58 W - - TO-204AD (TO-3) - PNP 1.5V @ 500µA, 2.5mA 80 V
Showing 5901-5950 of 21,247 products

About Transistors - Bipolar (BJT) - Single

Transistors - Bipolar (BJT) - Single are essential components in the realm of discrete semiconductor products, widely utilized in various electronic applications. These transistors are characterized by their ability to amplify current, making them crucial for signal processing and switching applications.

When sourcing Transistors - Bipolar (BJT) - Single, it is important to consider key specifications such as Current, DC Current Gain (hFE) (Min) @ Ic, Vce, Frequency, and Operating Temperature. These attributes play a significant role in determining the suitability of a transistor for specific applications, including new product design, prototyping, and production electronics assembly.

Buyers should prioritize comparing critical specifications before making procurement decisions. Validating lifecycle status and exploring alternate-source options can help mitigate sourcing risks. Additionally, confirming mechanical and electrical compatibility with existing design constraints is vital for successful integration.

Transistors - Bipolar (BJT) - Single are commonly used in applications such as maintenance and field replacement, engineering evaluation, and qualification processes. By understanding the important attributes and applications, buyers can make informed decisions when sourcing these vital electronic components.

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