DBLC05IQ-7
Diodes Incorporated
The Diodes Incorporated DBLC05IQ-7 is a uni-directional TVS diode designed for ESD and surge protection. It features low channel input capacitance and high surge absorption capabilities.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
571 pcs
|
571 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2 pcs
|
2 pcs | On Request | 1 | On Request | On Request | NO DC | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Mounting Type | |
| Tape & Reel |
The ZVNL110G from Diodes Incorporated is a next-generation N-channel enhancement mode MOSFET. It is engineered to minimize on-state resistance (RDS(on)) while maintaining superior switching performance, making it suitable for high-efficiency power management applications such as DC-DC converters and general power management functions.
Key electrical characteristics include a Drain-Source Voltage (BVDSS) of 100V. The on-resistance (RDS(on)) is a maximum of 3.0 Ohms at a Gate-Source Voltage (VGS) of 10V, and 4.5 Ohms at VGS = 5.0V. The continuous drain current (ID) is 0.6A at TA = 25°C and 0.5A at TA = 70°C.
This MOSFET is housed in a SOT223 (Type DN) package, designed for surface mounting. It offers features like low input capacitance and low input/output leakage. The device is RoHS compliant, Halogen and Antimony free ('Green' Device), and supplied in tape and reel packaging with a standard quantity of 1,000 units.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.60 | $2.60 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 100V.
The continuous drain current is 0.6A typical at 25°C (VGS=10V) and 0.5A at 70°C.
The maximum on-resistance is 3.0Ω at VGS=10V and 4.5Ω at VGS=5V.
The ZVNL110G is available in a SOT223 surface mount package.
Yes, the ZVNL110G is lead-free and halogen-free as per Diodes Incorporated documentation.
The maximum power dissipation is 2.0W at 25°C ambient temperature.
The maximum gate-source voltage is ±20V.
