| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
640 pcs
|
640 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request | |
| On Request | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| SVHC Present |
The Xilinx XCV300E-7BG352I is a Field Programmable Gate Array (FPGA) belonging to the Virtex family, designed to deliver high-performance and high-capacity programmable logic solutions. It utilizes an aggressive 0.22 μm, 5-layer metal CMOS process for increased silicon efficiency. This device offers densities ranging from 50k to 1M system gates and achieves system performance up to 200 MHz.
Key features include 260 I/O pins and a 352-MBGA package. The architecture is optimized for place-and-route efficiency, making it a flexible alternative to mask-programmed gate arrays. It supports multi-standard SelectIO™ interfaces and includes built-in clock-management circuitry with four dedicated delay-locked loops (DLLs) and global clock distribution nets.
The Virtex FPGA family provides a rich hierarchy of fast, flexible interconnect resources. The LUTs are configurable as various RAM types, including 16-bit RAM, 32-bit RAM, 16-bit dual-ported RAM, or 16-bit Shift Register. It also features configurable synchronous dual-ported 4k-bit RAMs and fast interfaces to external high-performance RAMs. The flexible architecture balances speed and density with dedicated carry logic for high-speed arithmetic and dedicated multiplier support.
This FPGA is supported by Xilinx's FPGA Foundation™ and Alliance Development Systems. It is SRAM-based with in-system configuration, offering unlimited re-programmability through four programming modes. The device is 100% factory tested.
The system performance is up to 200 MHz.
Densities range from 50k to 1M system gates.
It has 260 I/O pins.
It is in a 352-MBGA package.
It uses a 0.22 μm 5-layer metal process.