| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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12 pcs
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12 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Input Capacitance |
The Vishay Siliconix VQ1000J is an N-Channel MOSFET designed for direct logic-level interfacing with TTL/CMOS. It features a drain-source breakdown voltage of 60V and a maximum on-resistance of 2.5W at a gate-source voltage of 10V.
With a low gate threshold voltage of 2.1V and low input capacitance of 22pF, this MOSFET is easily driven without a buffer. Its fast switching speed of 7ns and low input/output leakage make it suitable for high-speed circuits.
Applications include driving relays, solenoids, lamps, displays, and other transistors. It is also well-suited for battery-operated systems and solid-state relays. The direct logic-level interface capability simplifies integration into various electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The VQ1000J has a minimum drain-source breakdown voltage of 60V.
The maximum on-resistance for the VQ1000J is 2.5W when the gate-source voltage is 10V.
The typical gate threshold voltage for the VQ1000J is 2.1V.
The VQ1000J has a typical input capacitance of 22pF.
The VQ1000J features a fast switching speed of 7ns.