| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
203 pcs
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203 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Power Dissipation |
The VN66AD from Siliconix is an N-Channel Enhancement-Mode MOS Transistor designed for various electronic applications. This component offers a breakdown voltage of 60V and a minimum drain-source on-resistance of 3Ω. It can dissipate a maximum power of 20W and operates within a wide temperature range from -55°C to 150°C.
With its 3-terminal configuration, the VN66AD is suitable for general-purpose switching and amplification tasks. Its specifications make it a viable option for designers seeking reliable performance in moderate power applications. The device is manufactured by Siliconix, a recognized name in semiconductor technology.
Further details regarding specific operating conditions, package type, and mounting considerations would typically be found in the manufacturer's datasheet. However, the available specifications indicate a robust component for demanding environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.92 | $1.92 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage of the VN66AD is 60V.
The minimum drain-source resistance for the VN66AD is 3Ω.
The maximum power dissipation of the VN66AD is 20W.
The operating temperature range for the VN66AD is -55°C to 150°C.
The VN66AD is an N-Channel Enhancement-Mode MOS Transistor.
The VN66AD has 3 terminals.
