| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6,806 pcs
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6806 pcs | On Request | 1 | On Request | On Request | 06+ | On Request | On Request |
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The UTC 2SD1803 is an NPN silicon transistor suitable for relay drivers, high-speed inverters, converters, and general high-current switching applications. It features low collector-to-emitter saturation voltage, high current capability, and excellent linearity of hFE.
Key electrical specifications include a collector-emitter breakdown voltage of 50V and a continuous collector current of 5A. The gain-bandwidth product (fT) reaches 180MHz at 5V and 1A. The transistor exhibits a low C-E saturation voltage of typically 220mV at 3A and 0.15A base current.
Available in TO-251, TO-252, and PDFN5x6 packages, the 2SD1803 supports both tube and tape & reel packaging. Its operating temperature range is from -40°C to +150°C.
This transistor is designed for applications requiring efficient switching and high current handling capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.85 | $0.85 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous collector current is 5A, with a pulse rating of 8A.
The minimum collector-emitter breakdown voltage is 50V.
The maximum power dissipation is 20W at a case temperature of 25°C, and 1W at an ambient temperature of 25°C.
The minimum gain-bandwidth product is 180MHz at VCE=5V and IC=1A.
The 2SD1803 is available in a TO-252-3 surface-mount package.
The junction temperature range is up to 150°C, and the storage temperature range is -40°C to +150°C.