| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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12 pcs
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12 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The VN2406L from Siliconix is an N-Channel Enhancement-Mode Vertical DMOS FET. It is designed for a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Key electrical specifications include a drain-to-source breakdown voltage of 240V, a continuous drain current of 1.0A, and an on-resistance of 6.0 Ohms. The device operates within a temperature range of -55°C to +150°C.
This MOSFET is housed in a TO-92 package and is suitable for through-hole mounting. Its advanced DMOS technology provides capabilities such as freedom from thermal runaway and thermally-induced secondary breakdown, making it a reliable choice for power supply circuits, motor controls, and driver applications.
Features like low power drive requirement, ease of paralleling, and excellent thermal stability are inherent to its design. The device also includes an integral source-drain diode.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.92 | $1.92 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source breakdown voltage is 240V.
The typical on-resistance is 6.0 Ohms.
The continuous drain current is 1.0A.
The operating temperature range is -55°C to +150°C.
The VN2406L is supplied in a TO-92 package.
The VN2406L is designed for through-hole mounting.