TN0620N3-G The Supertex TN0620N3-G is an N-Channel Enhancement-Mode MOSFET designed for logic level interfaces and switching applications. It offers a 200V drain-to-source breakdown voltage and a low threshold voltage.
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TN0620N3-G

Available from 1 distributors
Mfr Name: Supertex
Supertex
The Supertex TN0620N3-G is an N-Channel Enhancement-Mode MOSFET designed for logic level interfaces and switching applications. It offers a 200V drain-to-source breakdown voltage and a low threshold voltage.
✓ Total Stock: 2,530 pcs

TN0620N3-G Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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2,530 pcs
2530 pcs On Request 1 On Request On Request 07+ On Request On Request

TN0620N3-G Specifications Quick View

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TN0620N3-G Description

Short technical summary and product information.

The Supertex TN0620N3-G is a vertical DMOS FET featuring a low threshold voltage of 1.6V maximum. This enhancement-mode, normally-off transistor utilizes a silicon-gate manufacturing process, providing the power handling of bipolar transistors with the high input impedance of MOS devices.

 

Key electrical characteristics include a drain-to-source breakdown voltage of 200V, a maximum on-state resistance of 8 Ohms, and a maximum continuous drain current of 250mA. It also offers fast switching speeds with typical rise and fall times of 8ns and 20ns respectively, and turn-on/off delay times of 10ns and 20ns.

 

Designed for applications such as logic level interfaces (TTL and CMOS), solid-state relays, battery-operated systems, and analog switches, the TN0620N3-G is suitable for general-purpose line drivers and telecom switches. Its vertical DMOS structure ensures it is free from thermal runaway and thermally-induced secondary breakdown.

 

The device is housed in a TO-92 package and is suitable for through-hole mounting. The standard package quantity is 2000 units on a reel.

TN0620N3-G Quick Information

Product Type: N-Channel MOSFET
Canonical Name: Supertex TN0620 N-Channel Enhancement-Mode Vertical DMOS FET
Subcategory: N-Channel Enhancement-Mode

TN0620N3-G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TN0620N3-G Features

  • Low threshold voltage of 1.6V maximum.
  • High input impedance and low input capacitance.
  • Fast switching speeds with typical 8ns rise time.
  • 200V drain-to-source breakdown voltage.
  • TO-92 package for through-hole mounting.

TN0620N3-G Applications

  • Ideal for TTL and CMOS logic interfaces.
  • Suitable for solid-state relay applications.
  • Used in battery-operated systems.
  • Applicable for photo voltaic drives.
  • General purpose line drivers.

TN0620N3-G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum gate threshold voltage for the TN0620N3-G?

The maximum gate threshold voltage is 1.6V.

What is the drain-to-source breakdown voltage of the TN0620N3-G MOSFET?

The drain-to-source breakdown voltage is 200V.

What is the maximum on-state resistance for this MOSFET?

The maximum on-state resistance is 8 Ohms.

What is the operating temperature range for the TN0620N3-G?

The operating temperature range is -55°C to +150°C.

What package type is the TN0620N3-G supplied in?

The TN0620N3-G is supplied in a TO-92 package.

Is the TN0620N3-G RoHS compliant?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level is 1 Unlimited.

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