| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,530 pcs
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2530 pcs | On Request | 1 | On Request | On Request | 07+ | On Request | On Request |
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| Tape & Reel |
The Supertex TN0620N3-G is a vertical DMOS FET featuring a low threshold voltage of 1.6V maximum. This enhancement-mode, normally-off transistor utilizes a silicon-gate manufacturing process, providing the power handling of bipolar transistors with the high input impedance of MOS devices.
Key electrical characteristics include a drain-to-source breakdown voltage of 200V, a maximum on-state resistance of 8 Ohms, and a maximum continuous drain current of 250mA. It also offers fast switching speeds with typical rise and fall times of 8ns and 20ns respectively, and turn-on/off delay times of 10ns and 20ns.
Designed for applications such as logic level interfaces (TTL and CMOS), solid-state relays, battery-operated systems, and analog switches, the TN0620N3-G is suitable for general-purpose line drivers and telecom switches. Its vertical DMOS structure ensures it is free from thermal runaway and thermally-induced secondary breakdown.
The device is housed in a TO-92 package and is suitable for through-hole mounting. The standard package quantity is 2000 units on a reel.
The maximum gate threshold voltage is 1.6V.
The drain-to-source breakdown voltage is 200V.
The maximum on-state resistance is 8 Ohms.
The operating temperature range is -55°C to +150°C.
The TN0620N3-G is supplied in a TO-92 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.