| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The VN0106 is an N-Channel Enhancement-Mode Vertical DMOS FET manufactured by SI. It utilizes a vertical DMOS structure and a silicon-gate process, offering the power handling of bipolar transistors with the high input impedance and positive temperature coefficient inherent in MOS devices. This device is suitable for a wide range of switching and amplifying applications.
Key electrical specifications include a breakdown voltage (BVDSS) of 60V and a gate threshold voltage (VGS(th)) ranging from 0.8V to 2.4V. The maximum drain-source on-resistance (RDS(on)) is 3Ω, with a typical value of 2.5Ω. It has a continuous drain current (ID) of 350mA and a pulsed drain current (ID) of 2.0A. The device operates over a temperature range of -55°C to +150°C.
The VN0106 is housed in a TO-92-3 package and is designed for through-hole mounting. Its features include freedom from secondary breakdown, low power drive requirements, ease of paralleling, low CISS, fast switching speeds, excellent thermal stability, and an integral source-drain diode. Applications include motor controls, converters, amplifiers, switches, power supply circuits, and various driver circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage (BVDSS) of the VN0106 is 60V.
The maximum drain-source on-resistance (RDS(on)) for the VN0106 is 3Ω.
The VN0106 operates between -55°C and +150°C.
The VN0106 is available in a TO-92-3 package.