| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,190 pcs
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4190 pcs | On Request | 1 | On Request | On Request | 12+PBF | On Request | On Request |
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| SVHC Present |
The TRINNO TMU3N80G is a field-effect transistor (FET) utilizing N-channel MOSFET technology. It is designed for through-hole mounting (PTH) and comes in an IPAK package. Key electrical characteristics include a maximum drain-source voltage (Vds) of 800V and a maximum continuous drain current (Id) of 3A. The typical on-resistance (Rds) is 4.2 Ohms. The transistor also features a gate-source voltage (Vgs) limit of 30V and a typical gate threshold voltage (Vgs(th)) of 4V.
Further specifications include a total gate charge (Qg) of 19 nC, a rise time (Tr) of 36 ns, and an input capacitance (Ci) of 65 pF. The maximum power dissipation (Pd) is rated at 94W, and the maximum channel temperature (Tj) is 150°C. This MOSFET is suitable for applications requiring high voltage switching capabilities and can be replaced by similar parts like TMD3N80G, TMP3N80, TSM3N80CH, TSM3N80CP, and TSM3N80CZ.
This component is designed for general-purpose power switching applications where its voltage and current ratings are suitable. The through-hole mounting makes it convenient for breadboarding and traditional PCB designs.
800V.
3A.
4.2 Ohm.
IPAK (through-hole).
4V typical.
94W.
150°C.