| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,856 pcs
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1856 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 |
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The UCC21551ADWR from Texas Instruments is a high-performance, dual-channel, reinforced isolation gate driver designed for demanding power applications. It offers robust isolation with a withstand voltage of 5000 Vrms and a working isolation voltage of 1500 Vrms, ensuring safety and reliability in high-voltage systems.
This gate driver provides peak output currents of 4A sourcing and 6A sinking, making it suitable for driving power switches such as IGBTs, MOSFETs, and SiCFETs. Key features include programmable dead time control, allowing for optimized switching performance and reduced shoot-through current. The device operates with an input supply voltage range of 3V to 5.5V and an output voltage range of 13V to 25V.
With a wide operating temperature range of -40°C to 150°C, the UCC21551ADWR is built for harsh environments. It is available in a surface-mount SOIC package, facilitating integration into compact designs. The device also includes undervoltage lockout protection and is functional safety-capable, making it a versatile choice for various industrial and automotive applications requiring reliable gate drive and isolation.
Applications include motor drives, power supplies, and industrial automation systems where efficient and safe switching of power semiconductors is critical. The combination of high isolation, strong drive capability, and programmable features makes the UCC21551ADWR a valuable component for modern power electronics designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.59 | $0.59 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical peak source current is 4 A and the typical peak sink current is 6 A.
The withstand isolation voltage is 5000 Vrms and the working isolation voltage is 1500 Vrms.
It supports IGBT, MOSFET, and SiCFET power switches.
The operating temperature range is -40 °C to 150 °C.
It is available in a surface-mount SOIC package.
Yes, it features programmable dead time.
The typical propagation delay time is 0.028 µs.