Mfr Part #:

TPCS8212

Mfr Name: Toshiba

The Toshiba TPCS8212 is an N-Channel MOSFET designed for Lithium Ion Battery Applications. It features a low drain-source ON resistance of 16 mΩ (typ.) and a high forward transfer admittance of 11 S (typ.).

✓ Total Stock: 53,207 pcs

TPCS8212 Available from 2 distributors

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✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	51,980 pcs On Request	51980 pcs	On Request	1	On Request	On Request	06+	On Request	On Request
Smaxon Electronics ✓ Non-Authorised Inventory information	1,227 pcs On Request	1227 pcs	On Request	1	On Request	On Request	06+	On Request	On Request

TPCS8212 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Toshiba
Package / Case	2-3R1E
Storage Temperature	−55~150 °C
Weight	0.035 g (typ.)

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TPCS8212 Description

Short technical summary and product information.

The Toshiba TPCS8212 is a silicon N-channel MOSFET utilizing U-MOSIII technology, specifically designed for Lithium Ion Battery Applications. This device offers a small footprint due to its small and thin package.

Key electrical characteristics include a low drain-source ON resistance of 16 mΩ (typical) and a high forward transfer admittance of 11 S (typical). The MOSFET has a maximum drain-source voltage of 20V and a maximum continuous drain current of 6A. The threshold voltage ranges from 0.5V to 1.2V.

Thermal performance is critical for this component, with a maximum channel temperature of 150°C. The datasheet provides detailed thermal resistance values for both single-device and dual-device operation under various mounting conditions.

Absolute maximum ratings are provided for various parameters including drain-source voltage, gate-source voltage, and drain current. Users should consult the Toshiba Semiconductor Reliability Handbook for guidance on continuous operation under heavy loads to ensure product reliability.

TPCS8212 Quick Information

Product Type: MOSFET

Canonical Name: Toshiba TPCS8212 N-Channel MOSFET

Subcategory: Single

TPCS8212 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

TPCS8212 Features

Maximum drain-source voltage of 20 V.
Continuous drain current rating of 6 A.
Low typical on-resistance of 16 mΩ.
High forward transconductance of 11 S.
Compact 2-3R1E package weighing 0.035 g.

TPCS8212 Applications

Used in low-voltage power management circuits.
Suitable for load switching applications.
Ideal for battery-powered device designs.
Can be used in DC-DC converter output stages.

TPCS8212 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage?

20 V.

What is the continuous drain current rating?

6 A DC, 24 A pulse.

What is the typical drain-source on-resistance?

16 mΩ at VGS = 10 V, ID = 6 A.

What is the gate threshold voltage range?

0.5 to 1.2 V.

What is the maximum channel temperature?

150 °C.

What is the storage temperature range?

-55 to 150 °C.

What is the package type?

2-3R1E.

TPCS8212 Alternate Parts

Same form/fit/function or matching attribute configuration across different manufacturers.

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TPCS8212.

Toshiba

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