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835 pcs
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835 pcs | On Request | 1 | On Request | On Request | 06+ | On Request | On Request |
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The Toshiba TPCS8212 is a silicon N-channel MOS type field-effect transistor designed for applications such as Lithium Ion Batteries. It offers a small footprint due to its small and thin package.
Key electrical characteristics include a low drain-source ON resistance of 16 mΩ (typical) and a high forward transfer admittance of 11 S (typical). The device has a maximum drain-source voltage of 20V and a maximum continuous drain current of 6A. The threshold voltage ranges from 0.5V to 1.2V.
Thermal specifications include a maximum channel temperature of 150°C and a storage temperature range of -55°C to 150°C. The device is packaged in a 2-3R1E package with a typical weight of 0.035g.
This transistor is an electrostatic-sensitive device and should be handled with caution.
The drain-source voltage rating for the TPCS8212 is 20 V.
The typical drain-source ON resistance for the TPCS8212 is 16 mΩ.
The typical forward transfer admittance for the TPCS8212 is 11 S.
The maximum storage temperature for the TPCS8212 is 150 °C.
The package type for the TPCS8212 is 2-3R1E.
The TPCS8212 is designed for Lithium Ion Battery Applications.