TPCS8212. The Toshiba TPCS8212 is an N-Channel MOSFET designed for Lithium Ion Battery Applications. It features a low drain-source ON resistance of 16 mΩ (typ.) and a high forward transfer admittance of 11 S (typ.).
Mfr Part #:

TPCS8212.

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TPCS8212 is an N-Channel MOSFET designed for Lithium Ion Battery Applications. It features a low drain-source ON resistance of 16 mΩ (typ.) and a high forward transfer admittance of 11 S (typ.).
✓ Total Stock: 835 pcs

TPCS8212. Available from 1 distributor

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835 pcs
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TPCS8212. Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Manufacturer Name
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Storage Temperature
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TPCS8212. Description

Short technical summary and product information.

The Toshiba TPCS8212 is a silicon N-channel MOS type field-effect transistor designed for applications such as Lithium Ion Batteries. It offers a small footprint due to its small and thin package.

 

Key electrical characteristics include a low drain-source ON resistance of 16 mΩ (typical) and a high forward transfer admittance of 11 S (typical). The device has a maximum drain-source voltage of 20V and a maximum continuous drain current of 6A. The threshold voltage ranges from 0.5V to 1.2V.

 

Thermal specifications include a maximum channel temperature of 150°C and a storage temperature range of -55°C to 150°C. The device is packaged in a 2-3R1E package with a typical weight of 0.035g.

 

This transistor is an electrostatic-sensitive device and should be handled with caution.

TPCS8212. Quick Information

Product Type: N-Channel MOSFET
Canonical Name: Toshiba TPCS8212 N-Channel MOSFET
Subcategory: N-Channel

TPCS8212. Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TPCS8212. Features

  • Low drain-source ON resistance: 16 mΩ (typ.)
  • High forward transfer admittance: 11 S (typ.)
  • Designed for Lithium Ion Battery applications
  • Small footprint, thin package
  • Electrostatic-sensitive device

TPCS8212. Applications

  • Ideal for battery-powered load switching.
  • Suitable for DC-DC converter circuits.
  • Use in portable electronic device power management.
  • Applicable for low-side load switch designs.
  • Perfect for space-constrained general switching.

TPCS8212. FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating for the TPCS8212?

The drain-source voltage rating for the TPCS8212 is 20 V.

What is the typical ON resistance of the TPCS8212?

The typical drain-source ON resistance for the TPCS8212 is 16 mΩ.

What is the typical forward transfer admittance of the TPCS8212?

The typical forward transfer admittance for the TPCS8212 is 11 S.

What is the maximum storage temperature for the TPCS8212?

The maximum storage temperature for the TPCS8212 is 150 °C.

What is the package type for the TPCS8212?

The package type for the TPCS8212 is 2-3R1E.

What are the primary applications for the TPCS8212?

The TPCS8212 is designed for Lithium Ion Battery Applications.

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