HZM11NB1TR-E
Hitachi
The Renesas HZM11NB1TR-E is a Zener Diode designed for voltage regulation. It features a nominal Zener voltage of 10.66V and a power rating of 200mW.
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28,974 pcs
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28974 pcs | On Request | 1 | On Request | On Request | 01+ | On Request | On Request | |
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368 pcs
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368 pcs | On Request | 1 | On Request | On Request | 03+ | On Request | On Request |
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The TPCS8201 is a single N-channel MOSFET manufactured by Toshiba. It features a minimum drain-source breakdown voltage of 20V and a minimum drain-source resistance of 30mΩ. The device is rated for a maximum power dissipation of 1W and can operate at junction temperatures up to 150°C. The component has 8 terminals. This MOSFET is suitable for low-voltage switching applications and power management circuits. Proper heat sinking is recommended to stay within the power dissipation limits.
The minimum breakdown voltage is 20V.
The minimum drain-source resistance is 30mΩ.
The maximum power dissipation is 1W.
The maximum operating temperature is 150°C.
The TPCS8201 has 8 terminals.