| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
500,000 pcs
|
500000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
49,000 pcs
|
49000 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request | |
|
39,000 pcs
|
39000 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Failure Rate | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Toshiba TPC8065-H is a discrete semiconductor component belonging to the Transistors - FETs, MOSFETs - Single category. This N-Channel MOSFET features a maximum drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 13A at 25°C. Its on-resistance (Rds On) is a maximum of 11.6mOhm at 6.5A and 10V gate-source voltage.
The device operates with a drive voltage range of 4.5V to 10V and has a gate threshold voltage (Vgs(th)) maximum of 2.3V at 200μA. The input capacitance (Ciss) is a maximum of 1350pF at 10V. The MOSFET has a maximum power dissipation of 1W (Ta) and an operating temperature range up to 150°C (TJ).
Packaged in an 8-SOIC surface mount package, the TPC8065-H is suitable for various power management applications. It is supplied in Tape & Reel (TR) packaging. The component is RoHS compliant and has a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
8-SOIC surface mount package.
150°C.
13A at 25°C.
11.6mOhm at 6.5A and 10V.
2.3V maximum at 200μA.