| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6,000 pcs
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6000 pcs | On Request | 1 | On Request | On Request | 9902 | On Request | On Request |
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The TPCS8004 is an N-channel enhancement mode MOSFET manufactured by Toshiba. It is designed for general-purpose switching applications requiring a drain-source voltage up to 200V and a continuous drain current of 1.3A. The device features a low typical drain-source on-resistance of 0.56Ω, which helps minimize conduction losses in power circuits.
Electrical characteristics include a gate threshold voltage range of 1.5V to 3.5V, a typical forward transconductance of 1.8S, and a maximum gate leakage current of ±10μA. The MOSFET can handle a single pulse avalanche energy of 1.05mJ and repetitive avalanche energy of 0.15mJ. The maximum channel temperature is 150°C, with a storage temperature range of -55°C to 150°C.
The device is offered in a surface mount 2-3R1B package with a typical weight of 0.035g. Thermal resistance from channel to ambient is 83.3°C/W for a 10-second pulse on a specific mounting condition (Note 2a) and 208°C/W for another condition (Note 2b). This package is suitable for automated assembly processes.
This MOSFET is RoHS3 compliant (unverified) and has a moisture sensitivity level of 1 (unlimited), making it robust for handling. For detailed design guidance, refer to the official datasheet.
200V.
0.56 Ω typical.
1.5 V to 3.5 V (VDS=10V, ID=1mA).
2-3R1B surface mount package.
150°C.
1.3 A (DC).
1.05 mJ.
