| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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37,080 pcs
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37080 pcs | On Request | 1 | On Request | On Request | 06+Q1 | On Request | On Request |
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The Toshiba TPC8406-H is a Silicon P/N-Channel MOS Type Field Effect Transistor from the U-MOSIII family. It is designed for high efficiency DC/DC converters, notebook PC applications, portable equipment, and CCFL inverter applications.
Key electrical characteristics include a low drain-source ON-resistance of 24 mΩ (typ.) for P-Channel and 22 mΩ (typ.) for N-Channel. It also features a small gate charge, with 9.7 nC (typ.) for P-Channel and 3.5 nC (typ.) for N-Channel. The transistor exhibits high forward transfer admittance, 13 S (typ.) for P-Channel and 14 S (typ.) for N-Channel, and low leakage current.
The TPC8406-H operates with a drain-source voltage of up to -40V for P-Channel and 40V for N-Channel. It has a maximum channel temperature of 150°C and a storage temperature range of -55°C to 150°C.
Packaged in a small and thin 2-6J1E package, this device is suitable for applications requiring a small footprint and high-speed switching. The weight is approximately 0.085 g (typ.).
40V for both N and P channels.
2-6J1E (Toshiba package code).
Channel temperature up to 150°C, storage from -55°C to 150°C.
24mΩ for P-channel and 22mΩ for N-channel.
9.7nC for P-channel and 3.5nC for N-channel.
6.5A continuous DC, 26A pulsed.
-0.8 to -2.0V for P-channel, 1.1 to 2.3V for N-channel.
