| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,530 pcs
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2530 pcs | On Request | 1 | On Request | On Request | 16+NOPB | On Request | On Request |
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| SVHC Present |
The Toshiba TPCP8405 is a general-purpose small signal MOSFET featuring both N-channel and P-channel elements, each with a built-in diode. This device operates in enhancement mode and is constructed using Metal-Oxide Semiconductor technology.
Key electrical specifications include a minimum breakdown voltage of 30V and a maximum drain current (ID) of 6.5A. The maximum drain-source on-resistance is rated at 0.029 Ohm. The MOSFET is housed in an 8-pin package and is designed for surface mounting.
This component is suitable for various switching applications in electronic circuits. Its dual-channel configuration and complementary N/P-channel design offer flexibility in circuit design.
The minimum breakdown voltage for the TPCP8405 is 30V.
The maximum drain current (ID) for the TPCP8405 is 6.5A.
The maximum drain-source on-resistance for the TPCP8405 is 0.029 Ohm.
The TPCP8405 features both N-channel and P-channel types.
The TPCP8405 has 2 elements, each with a built-in diode.
Yes, the TPCP8405 is designed for surface mounting.
