| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
361,600 pcs
|
361600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
94,000 pcs
|
94000 pcs | On Request | 1 | On Request | On Request | 12PBF | On Request | On Request | |
|
2,900 pcs
|
2900 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
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This Toshiba TPCF8108 is a P-channel, Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) suitable for general-purpose switching applications. It features a breakdown voltage of 20V and a maximum continuous drain current of 7A. The MOSFET exhibits a low maximum on-resistance of 0.0370 ohm, contributing to efficient operation.
The TPCF8108 is configured as a single transistor with a built-in diode and operates in enhancement mode. It is housed in a thin, small outline package, designed for surface mounting. The package material is plastic/epoxy, and the terminals are flat and dual. This component is constructed from silicon.
Key electrical characteristics include a 20V minimum breakdown voltage and a 7A maximum drain current. The low on-resistance is a significant feature for power efficiency in switching circuits. The component is specified for general-purpose small signal applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage for the TPCF8108 is 20 V.
The maximum drain current for the TPCF8108 is 7 A.
The maximum drain-source on-resistance for the TPCF8108 is 0.037 Ω.
The TPCF8108 uses Metal-Oxide Semiconductor (MOS) FET technology.
The TPCF8108 has a P-Channel type.
The TPCF8108 comes in a VS-8 package case.
The TPCF8108 is designed for Surface Mount applications.