| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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395 pcs
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395 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
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| Configuration | |
| Halogen Free | |
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| SVHC Present | |
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The TSM2303CXRFG is a general-purpose small signal MOSFET from Taiwan Semiconductor, featuring a P-Channel configuration with a built-in diode. It is designed for switching applications and operates in enhancement mode.
Key electrical specifications include a minimum breakdown voltage of 30V and a maximum drain current (ID) of 1.3A. The maximum on-resistance (RDS(on)) is 0.18 Ohms. The device has a maximum power dissipation of 0.7W at ambient temperature.
This MOSFET utilizes Metal-Oxide Semiconductor (MOS) FET technology and is housed in a small outline, rectangular plastic/epoxy package suitable for surface mounting. The terminal form is gull wing, with dual terminal positions. The manufacturer package description notes it is Halogen Free and RoHS Compliant.
This component is ideal for various general-purpose switching tasks in electronic circuits where a P-Channel MOSFET is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.60 | $2.60 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum breakdown voltage is 30V.
The maximum drain current is 1.3A.
The maximum drain-source on-resistance is 0.18 ohms.
The maximum power dissipation is 0.7W at ambient temperature.
The channel type is P-Channel.
The package is a surface mount small outline package with gull wing terminals, designated Package-3.
The operating mode is enhancement.