| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
48,314 pcs
|
48314 pcs | On Request | 1 | On Request | On Request | 06+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current Rating | |
| Input Capacitance | |
| Power Dissipation |
The TPC8A01 from Toshiba is an N-Channel MOSFET suitable for various electronic applications. It is housed in a SOIC package and designed for surface mounting.
Key electrical specifications include a breakdown voltage of 30V and a maximum on-resistance (RDS(on)) of 25mΩ. The device offers a current rating of 8.5A. It also features a rise time of 17ns and a fall time of 92ns.
Thermal characteristics are important for this component, with a maximum power dissipation of 750mW and a general power dissipation rating of 1.5W. The operating temperature range spans from -55°C to 150°C.
This MOSFET is manufactured by Toshiba and is identified by the part number TPC8A01.
30V.
SOIC surface mount package.
-55°C to 150°C.
8.5A.
25mΩ maximum.
940pF.
Rise time 17ns, fall time 92ns.